Amorphous silicon based p-i-i-n structure for color sensor
- Citation:
- Zhang, S., Raniero Fortunato Pereira Águas Ferreira Martins L. E. L. "Amorphous silicon based p-i-i-n structure for color sensor." Materials Research Society Symposium Proceedings. Vol. 862. 2005. 679-683.
Abstract:
This work deals with the study of the role of the film thickness and composition on the color selectivity of the collecting spectrum of glass/ZnO:Ga/p-a-Si1-xCx:H/ a-Si1-x C x:H /a-Si:H/n-a-Si:H/Al photoelectronic detectors produced in a single chamber plasma enhanced chemical vapor deposition (PECVD) system. The cross contaminations were minimized by a rotate-cover substrate holder system. The devices can detect the blue illumination at small reverse bias and detect red illumination at large reverse bias. The role of the process parameters, especially the thickness of the p-type and intrinsic a-Si1-x C x:H, and the intrinsic a-Si:H layers on the device performances were studied in detail aiming to achieve a better detectivity. © 2005 Materials Research Society.
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