de Nunes de Carvalho, C., Nijs Ferreira Fortunato Martins J. M. M. I. "
Improvement of the ITO-p interface in a-Si:H solar cells using a thin SiO intermediate layer."
Materials Research Society Symposium - Proceedings. Vol. 420. 1996. 861-865.
AbstractThe use of ITO thin films on glass/ITO/p-i-n/metal amorphous silicon solar cells is reviewed. It is suggested a new application for silicon monoxide thin films on the ITO-p interface, as an intermediate layer, to minimize the ITO thin film deterioration process, during the early stage of exposure to a silane plasma rich in hydrogen. The thickness of the silicon monoxide thin films is chosen not to worsen the optical and electrical properties of the ITO thin films. The ITO-p interface is optimized (due to impurities diffusion decrease), leading to an overall improvement of the device performance.