Motivated by the need to describe regime switching in stock prices, we introduce and study a stochastic process in continuous time with two regimes and one threshold driving the change in regimes. When the difference between the regimes is simply given by different sets of real-valued parameters for the drift and diffusion coefficients, we show that there are consistent estimators for the threshold as long as we know how to classify a given observation of the process as belonging to one of the two regimes.

A transient heat transfer model was developed to numerically predict the thermal behaviour of the external walls of a room under realistic outdoor conditions. The excitation is not simply sinusoidal even though it is considered to have daily periodicity. The numerical model is based on the finite difference method and handles one-dimensional heat conduction through multilayered walls. The boundary condition at the outer surface of the wall is described with the sol-air temperature concept. The temperatures of indoor air and of other internal surfaces in the room are assumed to be equal and constant. The numerical results were used to calculate values of the decrement factor and time lag of several walls. The calculation followed two methods found in literature, in which these parameters are assumed constant, distinguished by the temperature evolution used: the sol-air or the wall's outer surface. Additionally, the inner surface temperature is used in both methods. The walls investigated range from low to high mass construction, face towards various directions and have light or dark coloured sunlit outer surfaces. The heat fluxes at the inner surface of the walls predicted by numerical modelling and estimated by the simplified methods are compared in detail to conclude on the validity of these simplified methods. As a by-product it is also possible to conclude on the dependence of the decrement factor and of the time lag on the outer surface colour and on the orientation of different types of walls. The results show that both simplified methods have poor accuracy in a significant number of cases. Also, it was found that the wall's azimuth significantly affects the time lag.© 2013 Published by Elsevier B.V.

The work deals with optical and structural properties of aluminophosphate glasses from Li2O-BaO-Al2O3-La 2O3-P2O5 system containing Sm 3 + and Eu3 + ions. X-ray fluorescence (XRF) has been used to establish the elemental composition of these materials. The influence of Sm3 + and Eu3 + ions on the optical properties of these glasses has been investigated in relation with their structural characteristics. The optical behavior of these materials has been studied by ultra-violet-visible (UV-Vis) spectroscopy, revealing absorption maxima specific to the doping ions. Structural information via vibration modes was provided by Fourier Transform Infrared (FTIR) absorption spectra evidenced as POP symmetrical and asymmetrical stretching vibration modes, POP bend, PO 2- symmetrical and asymmetrical stretching vibration modes, PO stretching vibration mode and POH water absorbance. Raman spectra acquired by 514.5 nm laser excitation disclosed peaks specific to metaphosphate network. Information about the elemental compositional homogeneity of Sm 3 + and Eu3 +-containing glasses as well as about the defects of the doped-glasses is revealed by scanning electron microscopy/energy dispersive spectrometry (SEM/EDS). Fluorescence spectroscopy measurements put in evidence important fluorescence peaks found at 596 nm and 643 nm for Sm 3 + ions in phosphate matrix and 611 nm and 700 nm in the case of Eu3 +-doped glass. © 2013 Elsevier B.V.

Thin-films of copper oxide Cu O were produced by thermal oxidation of metallic copper (Cu) at different temperatures (150-450 C). The films produced at temperatures of 200, 250 and 300 C showed high Hall motilities of 2.2, 1.9 and 1.6 cm V s , respectively. Single Cu O phases were obtained at 200 C and its conversion to CuO starts at 250 C. For lower thicknesses 40 nm, the films oxidized at 250 C showed a complete conversion to CuO phase. Successful thin-film transistors (TFTs) were produce by thermal oxidation of a 20 nm Cu film, obtaining p-type Cu O (at 200 C) and CuO (at 250 C) with On/Off ratios of 6 10 and 1 10 , respectively. © 2005-2012 IEEE.

In this paper we report results concerning the use of paper as substrate and as an electronic component for the next generation of sustainable low cost electronic systems, where different examples of applications are given. © 2013 Society for Information Display.

In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 C and 300 Cexhibited, respectively, a saturation mobility of 2.9 cm V s and 1.45 cm V s ; voltage of 0.15 V, and 0.2 V; a sub-threshold swing of 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of 3.5 10 and 6 10 , for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances. © 2013 IEEE.

The effect of post-deposition annealing temperature on the pH sensitivity of room temperature RF sputtered +{\hbox{Ta}}-{2}{\hbox{O}}5 was investigated. Structural and morphological features of these films were analyzed before and after annealing at various temperatures. The deposited films are amorphous up to 600 +^{\circ}{\hbox{C}}+ and crystallize at 700 +^{\circ}{\hbox{C}}+ in an orthorhombic phase. Electrolyte-insulator- semiconductor (EIS) field effect based sensors with an amorphous +{\hbox{Ta}}-{2}{\hbox{O}}5 sensing layer showed pH sensitivity above 50 mV/pH. For sensors annealed above 200 +^{\circ}{\hbox{C}}+ pH sensitivity decreased with increasing temperature. Stabilized sensor response and maximum pH sensitivity was achieved after low temperature annealing at 200 +^{\circ}{\hbox{C}}+ , which is compatible with the use of polymeric substrates and application as sensitive layer in oxides TFT-based sensors. © 2005-2012 IEEE.

The Cooling Load Temperature Difference (CLTD) values available in the literature for using the simplified CLTD method only apply to rooms under constant indoor air temperature. Due to this limitation, the present paper extends the application of this simplified approach to cooling and heating loads estimation of rooms with daily and weekend setback and setup thermostats, and introduces the term thermal load temperature difference (TLTD). To generate the values of TLTD, a transient heat transfer model, and the corresponding numerical tool, has been developed to predict the thermal behaviour of multilayered walls and flat roofs. The sol-air temperature concept is used. The internal thermal capacity of the room is assumed negligible. The TLTD evolutions have been generated for a wall and a roof, of high mass construction, with setback and setup thermostats in winter and summer scenarios. The periods in which the room is unoccupied have been taken in due account. The TLTD evolutions allowed the estimation of: the energy transferred at the inner surface and the maximum thermal load. Among the cases studied, the relative difference found in the energy transferred through the sunlit envelope, roof or wall under summer conditions, is about 20% when the temperature control strategy is changed from A to B. © 2012 Elsevier Ltd. All rights reserved.

In this work Laponite was combined with a modified abundant natural polymer, (caboxymethyl cellulose), acrylic sodium salt polymer and lithium perchlorate aiming to produce inexpensive and sustainable nanocomposite electrolytes for functional electrochemical devices. Optical, electrochemical, structural, morphological and rheological characterization was performed in order to evaluate their properties and potential advantages as electrolyte. It was verified that the addition of Laponite led to an ionic conductivity at room temperature (25 C) in the range of 6 to 9 × 10- 5 Scm - 1 this value being then determined by the composition of the nanocomposite. These electrolytes were applied to electrochromic devices using evaporated nickel oxide thin film as the electrochromic layer. The devices exhibited a significant transmittance modulation that exceeds 45 % at 600 nm. © 2013 Elsevier B.V.

The present work investigates alumino-phosphate glasses from Li 2O-BaO-Al2O3-La2O3-P 2O5 system containing Sm3+ and Eu3+ ions, prepared by two different ways: a wet raw materials mixing route followed by evaporation and melt-quenching, and by remelting of shards. The linear thermal expansion coefficient measured by dilatometry is identical for both rare-earth-doped phosphate glasses. Comparatively to undoped phosphate glass the linear thermal expansion coefficient increases with 2 × 10-7 K-1 when dopants are added. The characteristic temperatures very slowly decrease but can be considered constant with atomic weight, atomic number and f electrons number of the doping ions in the case of Tg (vitreous transition temperature) and Tsr (high annealing temperature) but slowly increase in the case of Tir (low annealing temperature-strain point) and very slowly increase, being practically constant in the case of TD (dilatometric softening temperature). Comparatively to undoped phosphate glass the characteristic temperatures of Sm and Eu-doped glasses present lower values. The higher values of electrical conductance for both doped glasses, comparatively to usual soda-lime-silicate glass, indicate a slightly reduced stability against water. The viscosity measurements, showed a quasi-linear variation with temperature the mean square deviation (R 2) being ranged between 0.872% and 0.996%. The viscosity of doped glasses comparatively to the undoped one is lower at the same temperature. Thermogravimetric analysis did not show notable mass change for any of doped samples. DSC curves for both rare-earth-doped phosphate glasses, as bulk and powdered samples, showed Tg values in the range 435-450 C. Bulk samples exhibited a very weak exothermic peak at about 685 C, while powdered samples showed two weak exothermic peaks at about 555 C and 685 C due to devitrification of the glasses. Using designed melting and annealing programs, the doped glasses were improved regarding bubbles and cords content and strain elimination. © 2013 Elsevier B.V. All rights reserved.

The ability to process and dimensionally scale field-effect transistors with and on paper and to integrate them as a core component for low-power-consumption analog and digital circuits is demonstrated. Low-temperature-processed p- and n-channel integrated oxide thin-film transistors in the complementary metal oxide semiconductor (CMOS) inverter architecture are seamlessly layered on mechanically flexible, low-cost, recyclable paper substrates. The possibility of building these circuits using low-temperature processes opens the door to new applications ranging from smart labels and sensors on clothing and packaging to electronic displays printed on paper pages for use in newspapers, magazines, books, signs, and advertising billboards. Because the CMOS circuits reported constitute fundamental building blocks for analog and digital electronics, this development creates the potential to have flexible form factor computers seamlessly layered onto paper. The holistic approach of merging low-power circuitry with a recyclable substrate is an important step towards greener electronics. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

The use of a vacuum double crystal spectrometer, coupled to an electron-cyclotron resonance ion source (ECRIS), allows to measure low-energy x-ray transitions energies in highly-charged ions with accuracies of the order of a few parts per million. We have used this installation to measure the 1s2p 1 P1 - 1s2 1 S0 diagram line and the 1s2s 3 S1 - 1s2 1 S0 forbidden M1 transition energies in helium-like argon, the 1s2s2p 2 P j 1s2 2s 2 S1/2 transitions in lithium-like argon and the 1s2s2 2p 1 P1 - 1s2 2s2 1 S0 transition in beryllium-like argon. These transition measurements have accuracies between 2 and 4 ppm depending on the line intensity. Thanks to the excellent agreement between the simulations and the measurements, we were also able to measure the transition width of all the allowed transitions. The results are compared to recent QED and relativistic many-body calculations.