{The reactions of TCNE- and TCNQ-functionalized (TCNE: tetracyanoethylene and TCNQ: 7,7', 8,8'-tetra-cyanoquinodimethane) zwitterionic benzoquinonemonoimines with a Cu(I)-BIAN complex (BIAN = bis-(o, o'-bisisopropylphenyl)acenaphthenequinonediimine) have been investigated and found to follow a diversity of interesting patterns. The complexes {[}Cu(BIAN)(NCMe)(L2)]BF4 (2) and {[}Cu(BIAN)(L2)(2)]BF4 (4) were obtained by reacting {[}Cu(BIAN)(NCMe) 2] BF4 (1) with one and two equivalents of L2, respectively. Following similar procedures, the complexes {[}Cu(BIAN)(NCMe)(L3)] BF4 (6) and {[}Cu(BIAN)(L3)(2)]BF4 (7) were obtained by reaction of 1 with L3. The reaction of 2 with 0.5 equiv. of 4,4'-bipyridine afforded {[}\{Cu(BIAN)-(L2)\}(2)(mu-4,4'-bipyridine)](BF4)(2) (3). The complexes were characterized by multinuclear NMR, IR and UV-Vis spectroscopic techniques, mass spectrometry, cyclic voltammetry and elemental analysis. The molecular structures of complexes 3 center dot 4CH(2)Cl(2) and 4 center dot CH2Cl2 were determined by single crystal X-ray diffraction. An unexpected coordination polymer {[}Cu(L2(-))(2)](infinity) (5) was also structurally characterized, which contains Cu(II) centres chelated by two N, O-bound ligands resulting from the monodeprotonation of L2.}

Neste artigo é apresentado um jogo sério que visa auxiliar a iniciação da aprendizagem do Princípio Alfabético
(discriminação auditiva dos sons das vogais) em crianças com dificuldades na aprendizagem (em particular
com alterações na consciência fonológica). Para isso são estudados vários motores de jogo e o conceito de elearning. São mostrados os vários cenários do jogo bem como as suas funcionalidades e propósitos. Este jogo
foi criado para capacitar instituições de apoio a crianças com perturbações do neurodesenvolvimento.

Development time and accuracy are measures that need to be taken into account when devising device models for a new technology. If complex circuits need to be designed immediately, then it is very important to reduce the time taken to realize the model. Solely based on data measurements, artificial neural networks (ANNs) modeling methodologies are capable of capturing small and large signal behavior of the transistor, with good accuracy, thus becoming excellent alternatives to more strenuous modeling approaches, such as physical and semi-empirical. This paper then addresses a static modeling methodology for amorphous Gallium-Indium-Zinc-Oxide - Thin Film Transistor (a-GIZO TFT), with different ANNs, namely: multilayer perceptron (MLP), radial basis functions (RBF) and least squares-support vector machine (LS-SVM). The modeling performance is validated by comparing the model outcome with measured data extracted from a real device. In case of a single transistor modeling and under the same training conditions, all the ANN approaches revealed a very good level of accuracy for large- and small-signal parameters (gm and gd), both in linear and saturation regions. However, in comparison to RBF and LS-SVM, the MLP achieves a very acceptable degree of accuracy with lesser complexity. The impact on simulation time is strongly related with model complexity, revealing that MLP is the most suitable approach for circuit simulations among the three ANNs. Accordingly, MLP is then extended for multiple TFTs with different aspect ratios and the network implemented in Verilog-A to be used with electric simulators. Further, a simple circuit (inverter) is simulated from the developed model and then the simulation outcome is validated with the fabricated circuit response. © 2014 Elsevier Ltd . All rights reserved.

This paper presents analog building blocks that find potential applications in display panels. A buffer (source-follower), subtractor, adder, and high-gain amplifier, employing only n-type enhancement amorphous gallium-indium-zinc-oxide thin-film transistors (a-GIZO TFTs), were designed, simulated, fabricated, and characterized. Circuit simulations were carried out using a neural model developed in-house from the measured characteristics of the transistors. The adder-subtractor circuit presents a power consumption of 0.26 mW, and the amplifier presents a gain of 34 dB and a power consumption of 0.576 mW, with a load of 10 MΩ16 pF. To the authors' knowledge, this is the highest gain reported so far for a single-stage amplifier with a-GIZO TFT technology. © 2015 IEEE.

The Ørsted Dal Member of the Upper Triassic Fleming Fjord Formation in East Greenland is well known for its rich vertebrate fauna, represented by numerous specimens of both body and ichnofossils. In particular, the footprints of theropod dinosaurs have been described. Recently, an international expedition discovered several slabs with 100 small chirotheriid pes and manus imprints (pes length 4–4.5 cm) in siliciclastic deposits of this unit. They show strong similarities with Brachychirotherium, a characteristic Upper Triassic ichnogenus with a global distribution. A peculiar feature in the Fleming Fjord specimens is the lack of a fifth digit, even in more deeply impressed imprints. Therefore, the specimens are assigned here tentatively to cf. Brachychirotherium. Possibly, this characteristic is related to the extremely small size and early ontogenetic stage of the trackmaker. The record from Greenland is the first evidence of this morphotype from the Fleming Fjord Formation. Candidate trackmakers are crocodylian stem group archosaurs; however, a distinct correlation with known osteological taxa from this unit is not currently possible. While the occurrence of sauropodomorph plateosaurs in the bone record links the Greenland assemblage more closer to that from the Germanic Basin of central Europe, here the described footprints suggest a Pangaea-wide exchange.Supplementary material: Three-dimensional model of cf. Brachychirotherium pes–manus set (from MGUH 31233b) from the Upper Triassic Fleming Fjord Formation (Norian–Rhaetian) of East Greenland as pdf, ply and jpg files (3D model created by Oliver Wings; photographs taken by Jesper Milàn) is available at https://doi.org/10.6084/m9.figshare.c.2133546

The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids with appropriate dimensions for pronounced far-field scattering. The plasmonic back reflectors are incorporated in the rear contact of thin film n-i-p nanocrystalline silicon solar cells to boost their photocurrent generation via optical path length enhancement inside the silicon layer. The quantum efficiency spectra of the devices revealed a remarkable broadband enhancement, resulting from both light scattering from the metal nanoparticles and improved light incoupling caused by the hemispherical corrugations at the cells' front surface formed from the deposition of material over the spherically shaped colloids. © 2015 IOP Publishing Ltd.

Aluminum Zinc Oxide has been extensively investigated as a cheap alternative to transparent conducting tin oxide films for electronic and optoelectronic applications. Thin films of Aluminum Zinc Oxide have been developed successfully through a combination of solution combustion synthesis and solution synthesis. Zn(NO3)3·6H2O as metal source was dissolved in 2-methoxyethanol as solvent through combustion synthesis with Urea as fuel while dopant source of AlCl3·6H2O was mixed separately in solvent to avoid aluminum oxide formation in the films. Precursor solutions were obtained mixing Zn & Al separate solutions in 9:1, 8:2, and 7:3 ratios respectively with oxide, fuel and dopant concentrations of 0.5, 0.25, 0.1, and 0.05 M. The film stacks have been prepared through spin-coating with heating at 400°C for 10 minutes after each deposition to remove residuals and evaporate solvents. Thermal annealing in oven at 600°C for 1 hour followed by rapid thermal annealing at 500°C & 600°C first in vacuum and then in N2-5%H2 environment respectively for 10 minutes each reduced the resistivity of film stacks. Film stack with 10 layers for an average thickness of 0.5μm gave the best Hall Effect resistivity of 3.2 × 10-2 -cm in the case of 0.5M solution with Zn:Al mixing ratio of 9:1 for RTA annealings at 600°C with an average total transparency of 80 % in the wavelength range of 400-1200 nm. The results show a clear trend that increasing the amount of ingredients resistivity could further be decreased. © 2015 IEEE.