The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

The dielectric breakdown of thin films of low-density polyethylene (LDPE) electrically aged in an aqueous solution of NaCl under an AC electric field was investigated. A two-parameter Weibull function was used for the dielectric breakdown time to failure. The probability of failure for a sample was obtained by the White method for progressively censored data. Samples aged at different temperatures were compared. The results show that initially the samples aged at lower temperature (approximate to25degreesC) are more prone to fail, while those aged at higher temperature (50degreesC) fail at longer times. This was attributed to a competition between oxidation and diffusion.

A series of silicon film samples were prepared by plasma enhanced chemical vapor deposition (PECVD) near the threshold from amorphous to nanocrystalline state by adjusting the plasma parameters and properly increasing the reactions between the hydrogen plasma and the growing surface. The microstucture of the films was studied by micro-Raman and Fourier transform infrared (FTIR) spectroscopy. The influences of the hydrogen dilution ratio of silane (R H = [H2]/[SiH4]) and the substrate temperature (Ts) on the microstructural and photoelectronic properties of silicon films were investigated in detail. With the increase of RH from 10 to 100, a notable improvement in the medium-range order (MRO) of the films was observed, and then the phase transition from amorphous to nanocrystalline phase occurred, which lead to the formation of diatomic hydrogen complex, H 2 * and their congeries. With the increase of T s from 150 to 275 °C, both the short-range order and the medium range order of the silicon films are obviously improved. The photoconductivity spectra and the light induced changes of the films show that the diphasic nc-Si/a-Si:H films with fine medium-range order present a broader light spectral response range in the longer wavelength and a lower degradation upon illumination than conventional a-Si:H films. © 2004 Elsevier B.V. All rights reserved.

The working principle of silicon p-i-n structures with low conductivity (σd) doped layers as single element image sensors is based on the modulation, by the local illumination conditions of the photocurrent generated by a light beam scanning the active area of the device. A higher sensitivity is achieved using a wide band gap a-Si:C alloy in the doped layers, improving the light penetration into the intrinsic semiconductor and reducing the lateral currents in the structure, which are responsible by an image smearing effect observed in sensors with high σd doped layers. This work focuses on the transient response of such sensor and on the role of the carbon (C) content of the doped layers. A set of devices with different percentage of C incorporation in the doped layers is analyzed by measuring the scanner-induced photocurrent under different bias conditions, (ranging from -1.5V to 1V) in order to evaluate the response time.

A synthesis on the state of art on dinosaur knowledge in Portugal is presented. The following genera have been recognized: Ceratosaurus, Torvosaurus, Lourinhanosaurus, Allosaurus, cf. Compsognathus, Stokesosaurus, cf. Richardoestesia, cf. Archaeopteryx, Euronychodon, cf. Paronychodon, Dinheirosaurus, Lourinhasaurus, Lusotitan, cf. Pleurocoelus, Lusitanosaurus, Dacentrurus, Dracopelta, Phyllodon, Hypsilophodon, Alocodon, Trimucrodon, Draconyx, Iguanodon, and Taveirosaurus. Most are from Late Jurassic localities at the Lourinhã area and Guimarota. A new genus, Lusotitan, is here raised to include the Late Jurassic ‘Brachiosaurus’ atalaiensis. Lower Cretaceous until Cenomanian material is scarce, except for dinosaur footprints. An interesting Late-Cretaceous, mostly small dinosaur association has been collected between Aveiro and Taveiro.

The influence of residual stresses on the performances of large area position sensitive detectors produced on flexible substrates are presented here. For evaluating the residual stresses, two main techniques were used: An active optical triangulation and angle resolved scattering and the constant photocurrent method (CPM). From the results it was possible to correlate the stresses and the density of defects present in the films.