Carbon Fiber Reinforced Polymer (CFRP) composites have a large potential for strengthening and retrofitting steel parts but due to their premature debonding from steel, further data and research are still required for wider application in such situations. In the present paper, the bond characteristics of CFRP-to-steel joints in pull-pull loaded conditions were studied. Monotonic loading of the double strap joints with different bond lengths was applied and the failure modes and interfacial bond-slip curves were obtained. A tri-linear bondslip model is proposed and it was derived from the experimental data. A closed-form solution approach is also proposed based on the tri-linear bond-slip model. The strength of the CFRP-to-steel interface, the distribution of the relative displacements between bonded materials, the strains developed in the CFRP laminate and the bond stresses along the interface are reported and the closed-form solution is compared with the experimental results. Two cases are selected for presentation: (i) one with the bond length greater than the effective bond length; and, inversely, (ii) one with bond length which is shorter than the effective bond length. The results predicted by the closed-form solutions are shown to be accurate enough when compared to the experiments.

Oxide electronic materials provide a plethora of possible applications and offer ample opportunity for scientists to probe into some of the exciting and intriguing phenomena exhibited by oxide systems and oxide interfaces. In addition to the already diverse spectrum of properties, the nanoscale form of oxides provides a new dimension of hitherto unknown phenomena due to the increased surface-to-volume ratio. Oxide electronic materials are becoming increasingly important in a wide range of applications including transparent electronics, optoelectronics, magnetoelectronics, photonics, spintronics, thermoelectrics, piezoelectrics, power harvesting, hydrogen storage and environmental waste management. Synthesis and fabrication of these materials, as well as processing into particular device structures to suit a specific application is still a challenge. Further, characterization of these materials to understand the tunability of their properties and the novel properties that evolve due to their nanostructured nature is another facet of the challenge. The research related to the oxide electronic field is at an impressionable stage, and this has motivated us to contribute with a roadmap on 'oxide electronic materials and oxide interfaces'. This roadmap envisages the potential applications of oxide materials in cutting edge technologies and focuses on the necessary advances required to implement these materials, including both conventional and novel techniques for the synthesis, characterization, processing and fabrication of nanostructured oxides and oxide-based devices. The contents of this roadmap will highlight the functional and correlated properties of oxides in bulk, nano, thin film, multilayer and heterostructure forms, as well as the theoretical considerations behind both present and future applications in many technologically important areas as pointed out by Venkatesan. The contributions in this roadmap span several thematic groups which are represented by the following authors: novel field effect transistors and bipolar devices by Fortunato, Grundmann, Boschker, Rao, and Rogers; energy conversion and saving by Zaban, Weidenkaff, and Murakami; new opportunities of photonics by Fompeyrine, and Zuniga-Perez; multiferroic materials including novel phenomena by Ramesh, Spaldin, Mertig, Lorenz, Srinivasan, and Prellier; and concepts for topological oxide electronics by Kawasaki, Pentcheva, and Gegenwart. Finally, Miletto Granozio presents the European action 'towards oxide-based electronics' which develops an oxide electronics roadmap with emphasis on future nonvolatile memories and the required technologies. In summary, we do hope that this oxide roadmap appears as an interesting up-to-date snapshot on one of the most exciting and active areas of solid state physics, materials science, and chemistry, which even after many years of very successful development shows in short intervals novel insights and achievements.

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Technology assessment (TA) and TA-like activities in countries like Japan have a unique history and continue to play a role in contemporary science, technology, and innovation (STI) processes. The aim of the discussion of TA’s experience in East Asia is how STI governance is locally enacted in Asian knowledge-driven economies, as TA activities develop in conjunction with STI policies and programs. To render these processes, policies, and programs visible and to understand their implications for STI governance, a panel at the Berlin conference on TA discussed contributions that described and conceptualized, for example, how TA activities have emerged in Asian knowledge-based economies (KBE), in which particular forms (e.g., academic and parliamentary TA programs), to which technologies and/or actors they are linked, and which methods are used and why. The panel also sought to compare and contrast how TA is (or is not) institutionalized in Asian countries and regions, and to point to prospects for expansion of TA capacity. In doing so, the panellists placed the development of TA in a historical, sociological, and comparative perspective, and opened space for critical reflection on the potential, problems, and limitations associated with initiating TA in Asia and with KBEs overall