Neagu, E. R., R. M. Neagu, C. J. Dias, M. C. Lanca, P. Inacio, and J. N. Marat-Mendes. "
Electrical Method to Study the Weak Molecular Movements at Nanometric Scale in Low Mobility Materials."
Advanced Materials Forum V, Pt 1 and 2. Eds. L. G. Rosa, and F. Margarido. Vol. 636-637. Materials Science Forum, 636-637. 2010. 430-436.
AbstractFor the characterization of the new materials and for a better understanding of the connection between structure and properties it is necessary to use more and more sensible methods to study molecular movement at nanometric scale. This paper presents the experimental basis for a new electrical method to study the fine molecular movements at nanometric scale in dielectric materials. The method will be applied for polar and non-polar materials characterization. Traditionally, the electrical methods used to study the molecular movements are based on the movements of the dipoles that are parts of the molecules. We have proposed recently a combined protocol to analyze charge injection/extraction, transport, trapping and detrapping in low mobility materials. The experimental results demonstrate that the method can be used to obtain a complex thermogram which contains information about all molecular movements, even at nanoscopic level. Actually during the charging process we are decorating the structure with space charge and during the subsequent heating we are observing an apparent peak and the genuine peaks that are related to charge de-trapping determined by the molecular movement. The method is very sensitive, very selective and allows to determinate the parameters for local and collective molecular movements, including the temperature dependence of the activation energy and the relaxation time.
Martins, R., L. Pereira, P. Barquinha, N. Correia, G. GONCALVES, I. Ferreira, C. Dias, and E. Fortunato. "
Floating gate memory paper transistor."
Oxide-Based Materials and Devices. Eds. F. H. Teherani, D. C. Look, C. W. Litton, and D. J. Rogers. Vol. 7603. Proceedings of SPIE, 7603. 2010.
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Martins, R., L. Pereira, P. Barquinha, N. Correia, G. GONCALVES, I. Ferreira, C. Dias, and E. Fortunato. "
Floating gate memory paper transistor."
Oxide-Based Materials and Devices. Eds. F. H. Teherani, D. C. Look, C. W. Litton, and D. J. Rogers. Vol. 7603. Proceedings of SPIE, 7603. 2010.
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Nunes, Isabel L., James Bliss, and Kellie King Joint influences of route familiarity and navigation system reliability on driving performance - Preliminary conclusions. Eds. P. Arezes, J. S. Baptista, M. P. Barroso, P. Carneiro, P. Cordeiro, N. Costa, R. Melo, A. S. Miguel, and G. P. Perestrelo. Occupational Safety and Hygiene (SHO10). Guimarães - Portugal: SPOSHO, 2010.
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Neagu, E. R., C. J. Dias, M. C. Lanca, R. Igreja, and J. N. Marat-Mendes. "
Medium Electric Field Electron Injection/Extraction at Metal-Dielectric Interface."
Advanced Materials Forum V, Pt 1 and 2. Eds. L. G. Rosa, and F. Margarido. Vol. 636-637. Materials Science Forum, 636-637. 2010. 437-443.
AbstractThe isothermal charging current and the isothermal discharging current in low mobility materials are analyzed either in terms of polarization mechanisms or in terms of charge injection/extraction at the metal-dielectric interface and the conduction current through the dielectric material. We propose to measure the open-circuit isothermal charging and discharging currents just to overpass the difficulties related to the analysis of the conduction mechanisms in dielectric materials. We demonstrate that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric interface and a reverse current related to the charge trapped into the shallow superficial or near superficial states of the dielectric and which can move at the interface in the opposite way that occurring during injection. Two important parameters can be determined (i) the highest value of the relaxation time for the polarization mechanisms which are involved into the transient current and (ii) the height of the potential barrier W-0 at the metal-dielectric interface. The experimental data demonstrate that there is no threshold field for electron injection/extraction at a metal-dielectric interface.