Opposite results concerning the sign of the parasitic charge accumulated at the metal dielectric contact in RF microelectromechanical systems (MEMS) capacitive switches are found in the literature. The mechanism concerning charge injection/extraction at the metal-dielectric contact and its influence on the pull-in voltage needs to be further clarified. A model-switch, for which only one dimension is in the microns range, is used to study the behaviour of a capacitive RF MEMS switch. The aim is to analyze how the electric charge is injected/extracted into or from the dielectric material under the applied field and to obtain realistic data to understand how this parasitic charge influences the pull-in voltage V-pi and the pull-off voltage V-po. A triangle voltage is employed to measure V-pi and V-po by measuring the isothermal charging/discharging currents. Our results demonstrate that V-pi is strongly dependent on the injected/extracted charge on the free surface of the dielectric. The charge injected/extracted at the bottom side of the dielectric has no influence on the actuation voltage. The charge injected/extracted on the free surface of the dielectric determines an increase of the modulus of V-pi and, eventually, the switch can fail to actuate. An estimation of the charge stored into the material was obtained (i) by measuring the charging current and the discharging current and (ii) from the value of the V-pi. The parasitic charge necessary to keep the bridge stick to the insulator is 5.3 x 10(-4) cm(-2) for our experimental conditions. The modification of the V-pi determined by the stored charge in the dielectric is analyzed. An increase of the relative dielectric permittivity by a factor of 2 produces a decrease of the actuation voltage of 10%. A variation of 30% in the elastic constant determines a variation of about 20% in the V-pi. A voltage threshold for charge injection/extraction was not observed.

Cork is a cellular biomaterial that has unique characteristics that make it suitable for many types of applications. Since it is also an electrical insulator, the study of its electrical and dielectric properties can lead to new interesting applications. The moisture present in cork and derivatives has a very important role on the dielectric properties. In this work a composite made of both recycled cork and TetraPak (R) used containers was studied and compared with other cork products. The dielectric relaxation spectra of natural cork (as received), commercial cork agglomerate and of a composite cork/Tetrapak (R) was investigated in the temperature range of -50 to 120 degrees C and in the frequency range of 10(-1) Hz-2 MHz. For some samples of the composite a small amount of paraffin was added. The highest values for the imaginary part of the dielectric permittivity were found for the commercial material and the composite without paraffin. The lowest was found for the cork/TetraPak (R)/paraffin composite. The influence of humidity content was investigated for the composite with wax. Natural cork shows a peak around 80 degrees C (not seen in the derivative materials). The commercial agglomerate and the cork/TetraPak (R)/paraffin composite show a peak around 40-50 degrees C. In the composite this peak becomes smaller as humidity is removed. (C) 2009 Elsevier B.V. All rights reserved.

For the characterization of the new materials and for a better understanding of the connection between structure and properties it is necessary to use more and more sensible methods to study molecular movement at nanometric scale. This paper presents the experimental basis for a new electrical method to study the fine molecular movements at nanometric scale in dielectric materials. The method will be applied for polar and non-polar materials characterization. Traditionally, the electrical methods used to study the molecular movements are based on the movements of the dipoles that are parts of the molecules. We have proposed recently a combined protocol to analyze charge injection/extraction, transport, trapping and detrapping in low mobility materials. The experimental results demonstrate that the method can be used to obtain a complex thermogram which contains information about all molecular movements, even at nanoscopic level. Actually during the charging process we are decorating the structure with space charge and during the subsequent heating we are observing an apparent peak and the genuine peaks that are related to charge de-trapping determined by the molecular movement. The method is very sensitive, very selective and allows to determinate the parameters for local and collective molecular movements, including the temperature dependence of the activation energy and the relaxation time.

Reported herein is a nonvolatile n-type floating gate memory paper field-effect transistor, emphasizing the role of the paper structure and properties on the device performance recorded such as in the high capacitance per unit area at low frequencies (>2.5 μFcm-2) and so on the set of high charge retention times achieved (>16000 hours). The device was built via the hybrid integration of natural cellulose fibers, which act simultaneously as substrate and gate dielectric, using amorphous indium zinc and gallium indium zinc oxides respectively for the gate electrode and channel layer. This was complemented by the use of continuous patterned metal layers as source/drain electrodes. © 2010 Copyright SPIE - The International Society for Optical Engineering.

The isothermal charging current and the isothermal discharging current in low mobility materials are analyzed either in terms of polarization mechanisms or in terms of charge injection/extraction at the metal-dielectric interface and the conduction current through the dielectric material. We propose to measure the open-circuit isothermal charging and discharging currents just to overpass the difficulties related to the analysis of the conduction mechanisms in dielectric materials. We demonstrate that besides a polarization current there is a current related to charge injection or extraction at the metal-dielectric interface and a reverse current related to the charge trapped into the shallow superficial or near superficial states of the dielectric and which can move at the interface in the opposite way that occurring during injection. Two important parameters can be determined (i) the highest value of the relaxation time for the polarization mechanisms which are involved into the transient current and (ii) the height of the potential barrier W-0 at the metal-dielectric interface. The experimental data demonstrate that there is no threshold field for electron injection/extraction at a metal-dielectric interface.