The integration of high temperature superconductors (HTS) in electrical machines potentially allows reduction in devices dimensions or performance improvement for the same active volume, when compared with their conventional ones. The use of polycrystalline HTS samples allows big bulk samples. An axial disc motor with HTS material or conventional aluminium in the rotor and conventional armature has been designed and developed. This paper describes simulations and laboratory experiments performed at liquid nitrogen temperature (77 K) in order to analyze the motor's behaviour and its electromechanical characteristics and to define an electric equivalent circuit that allows describing its operation. In order to evaluate the superconducting quality of the bulks and flux pinning phenomena, Hall probe mapping system was performed in order to define the field profiles at 77 K for different polar configurations. The analysis of the obtained results allows confirm the flux pinning phenomena, being the entire rotor magnetized and conclude that the motor with the HTS rotor behaves as a conventional hysteresis motor even though with a different nature, while the motor with aluminium rotor behaves as a conventional induction motor. In asynchronous regime, the HTS motor exhibits a constant torque, higher than the conventional aluminium one. For both cases, the developed torque is proportional to the poles pairs.

Sand pile and Bean models have already been applied to describe single grain HTS bulks. An extension to that approach was used to model multiseed bulks, needed for several practical applications as electric motors or flywheels with superconducting bearings. The use of genetic algorithms was then proposed to determine intra- and intergrain current densities, and application to two and three seeds samples using trapped flux experimental measurements was exemplified. However, this model assumed some simplifications, as equal properties in grain boundaries between neighboring grains. In this paper an extension to this methodology is proposed and evaluated by analyzing measurements performed in plans at different distances from surfaces of samples with three seeds. Discussion of its influence on a practical application is also explored.

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In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20{%} of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are ≈106 s and 105 s in vacuum and air, respectively.

Molybdenum is found in the active site of enzymes usually coordinated by one or two pyranopterin molecules. Here, we mimic an enzyme with a mononuclear molybdenum-bis pyranopterin center by incorporating molybdenum in rubredoxin. In the molybdenum-substituted rubredoxin, the metal ion is coordinated by four sulfurs from conserved cysteine residues of the apo-rubredoxin and two other exogenous ligands, oxygen and thiol, forming a Mo((VI))-(S-Cys)4(O)(X) complex, where X represents -OH or -SR. The rubredoxin molybdenum center is stabilized in a Mo(VI) oxidation state, but can be reduced to Mo(IV) via Mo(V) by dithionite, being a suitable model for the spectroscopic properties of resting and reduced forms of molybdenum-bis pyranopterin-containing enzymes. Preliminary experiments indicate that the molybdenum site built in rubredoxin can promote oxo transfer reactions, as exemplified with the oxidation of arsenite to arsenate.

Aluminum Zinc Oxide has been extensively investigated as a cheap alternative to transparent conducting tin oxide films for electronic and optoelectronic applications. Thin films of Aluminum Zinc Oxide have been developed successfully through a combination of solution combustion synthesis and solution synthesis. Zn(NO3)3·6H2O as metal source was dissolved in 2-methoxyethanol as solvent through combustion synthesis with Urea as fuel while dopant source of AlCl3·6H2O was mixed separately in solvent to avoid aluminum oxide formation in the films. Precursor solutions were obtained mixing Zn {&} Al separate solutions in 9:1, 8:2, and 7:3 ratios respectively with oxide, fuel and dopant concentrations of 0.5, 0.25, 0.1, and 0.05 M. The film stacks have been prepared through spin-coating with heating at 400°C for 10 minutes after each deposition to remove residuals and evaporate solvents. Thermal annealing in oven at 600°C for 1 hour followed by rapid thermal annealing at 500°C {&} 600°C first in vacuum and then in N2-5{%}H2 environment respectively for 10 minutes each reduced the resistivity of film stacks. Film stack with 10 layers for an average thickness of 0.5$μ$m gave the best Hall Effect resistivity of 3.2 × 10-2 $Ømega$-cm in the case of 0.5M solution with Zn:Al mixing ratio of 9:1 for RTA annealings at 600°C with an average total transparency of 80 {%} in the wavelength range of 400-1200 nm. The results show a clear trend that increasing the amount of ingredients resistivity could further be decreased.

Technology assessment (TA) had never been treated as a relevant topic within the International Sociological Association (ISA) before. The first steps towards establishing this association were taken in 1948, at the initiative of the Social Science Department of UNESCO. Its formal foundation was in 1949. The World Congress of Sociology in Japan was hopefully the beginning of continuous integration of TA into the thematic sessions within the ISA.

Electrochemically active bacteria (EAB) have the capability to transfer electrons to cell exterior, a feature that is currently explored for important applications in bioremediation and biotechnology fields. However, the number of isolated and characterized EAB species is still very limited regarding their abundance in nature. Colorimetric detection has emerged recently as an attractive mean for fast identification and characterization of analytes based on the use of electrochromic materials. In this work, WO3 nanoparticles were synthesized by microwave assisted hydrothermal synthesis and used to impregnate non-treated regular office paper substrates. This allowed the production of a paper-based colorimetric sensor able to detect EAB in a simple, rapid, reliable, inexpensive and eco-friendly method. The developed platform was then tested with Geobacter sulfurreducens, as a proof of concept. G. sulfurreducens cells were detected at latent phase with an RGB ratio of 1.10 ± 0.04, and a response time of two hours.

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Here we present for the first time a TiO2/Cu2O all-oxide heterojunction solar cell entirely produced by spray pyrolysis onto fluorine doped tin oxide (FTO) covered glass substrates, using silver as a back contact. A combinatorial approach was chosen to investigate the impact of the TiO2 window layer and the Cu2O light absorber thicknesses. We observe an open circuit voltage up to 350 mV and a short circuit current density which is strongly dependent of the Cu2O thickness, reaching a maximum of {\~{}}0.4 mA/cm2. Optical investigation reveals that a thickness of 300 nm spray pyrolysis deposited Cu2O is sufficient to absorb most photons with an energy above the symmetry allowed optical transition of 2.5 eV, indicating that the low current densities are caused by strong recombination in the absorber that consists of small Cu2O grains.