© 2016 WILEY-VCH Verlag GmbH {&} Co. KGaA, Weinheim The post-deposition modification of ZnO-based transparent conductive oxides (TCOs) can be the key to produce thin films with optoelectronic properties similar to indium tin oxide (ITO), but at a much lower cost. Here, we present electro-optical results achieved for post-deposition annealing of Al–Zn–O (AZO), AZO:H, Ga–Zn–O:H (GZO:H), and Zn–O:H (ZNO:H) thin films deposited by RF sputtering at room temperature. These studies comprise results of thermal annealing at atmospheric pressure, vacuum, forming gas, H2and Ar atmospheres, and H2and Ar plasmas, which lead to significant enhancement of their electro-optical properties, which are correlated to morphological and structural improvements. The post-deposition annealing leads to an enhancement in resistivity above 40{%} for AZO, AZO:H, and GZO:H, reaching $\rho$ ≈ 2.6–3.5 × 10−4$Ømega$cm, while ZnO:H showed a lower improvement of 13{%}. The averaged optical transmittance in the visible region is about 89{%} for the investigated TCOs. Such results match the properties of state-of-art ITO ($\rho$ ≈ 10−4$Ømega$cm and transmittance in VIS range of 90{%}) employing much more earth-abundant materials.

Indium tin oxide (ITO) is the current standard state-of-the-art transparent conductive oxide (TCO), given its remarkable optical and electrical properties. However, the scarcity of indium carries an important drawback for the long-term application due to its intensive use in many optoelectronic devices such as displays, solar cells, and interactive systems. Zinc oxide-based TCOs can be a cost-effective and viable alternative, but the limitations imposed by their transmittance versus resistivity tradeoff still keep them behind ITO. In this work, an in-depth study of the structural and compositional material changes induced by specific postannealing treatments is presented, based on aluminum zinc oxide (AZO) and hydrogenated AZO (AZO:H) thin films grown by rf-magnetron sputtering at room temperature that allows an extensive understanding of the films' electrical/structural changes and the ability to tune their physical parameters to yield increasingly better performances, which put them in line with the best ITO quality standards. The present investigation comprises results of thermal annealing at atmospheric pressure, vacuum, forming gas, H2 and Ar atmospheres and plasmas. Overall the study being performed leads to a decrease in resistivity above 40{%}, reaching $\rho$ ≈ 3 × 10−4 $Ømega$ cm, with an average optical transmittance in the visible region around 88{%}. Such results are equivalent to the properties of state-of-the-art ITO.

© 2015 Elsevier B.V. Titanium dioxide was synthesized on glass substrates from titanium (IV)isopropoxide and hydrochloride acid aqueous solutions through microwave irradiation using as seed layer either fluorine-doped crystalline tin oxide (SnO2:F) or amorphous tin oxide (a-SnOx). Three routes have been followed with distinct outcome: (i) equimolar hydrochloride acid/water proportions (1HCl:1water) resulted in nanorod arrays for both seed layers; (ii) higher water proportion (1HCl:3water) originated denser films with growth yield dependent on the seed layer employed; while (iii) higher acid proportion (3HCl:1water) hindered the formation of TiO2. X-ray diffraction (XRD) showed that the materials crystallized with the rutile structure, possibly with minute fractions of brookite and/or anatase. XRD peak inversions observed for the materials synthesized on crystalline seeds pointed to preferred crystallographic orientation. Electron diffraction showed that the especially strong XRD peak inversions observed for TiO2 grown from the 1HCl:3water solution on SnO2:F originated from a [001] fiber texture. Transmittance spectrophotometry showed that the materials with finer structure exhibited significantly higher optical band gaps. Photocatalytic activity was assessed from methylene blue degradation, with the 1HCl:3water SnO2:F material showing remarkable degradability performance, attributed to a higher exposure of (001) facets, together with stability and reusability.

Os dispositivos móveis em proximidade geográfica representam um conjunto de recursos inexplorados, tanto em termos de capacidade de processamento como de rmazenamento, o que abre caminho para novas aplicações com oportunidades e desafios únicos. Os sistemas atuais de partilha de dados (e. g., fotos, música, vídeos) para dispositivos móveis exigem que exista conectividade com a Internet para funcionarem. No entanto, em ambientes onde a conectividade com a Internet não é constante ou de boa qualidade (e. g., eventos desportivos e concertos), ou em locais remotos onde as infraestruturas de rede não existem, é difícil (ou mesmo impossível) partilhar dados entre vários dispositivos móveis. Para resolver este problema, os dispositivos móveis podem formar uma rede ad hoc para compartilhar os seus dados e recursos. Neste artigo propomos um sistema de armazenamento distribuído para partilha de dados entre dispositivos móveis de uso diário, e. g., smartphones e tablets, usando um mecanismo de melhor esforço para garantir persistência e disponibilidade de dados suportando churn (entrada e saída inesperada de dispositivos).

Spectroscopic and computational methods have been used to determine the protonation state of the edge sulfur ligand in the Cu4S2 CuZ form of the active site of nitrous oxide reductase (N2OR) in its 3CuICuII (1-hole) and 2CuI2CuII (2-hole) redox states. The EPR, absorption, and MCD spectra of 1-hole CuZ indicate that the unpaired spin in this site is evenly delocalized over CuI, CuII, and CuIV. 1-hole CuZ is shown to have a mu2-thiolate edge ligand from the observation of S-H bending modes in the resonance Raman spectrum at 450 and 492 cm-1 that have significant deuterium isotope shifts (-137 cm-1) and are not perturbed up to pH 10. 2-hole CuZ is characterized with absorption and resonance Raman spectroscopies as having two Cu-S stretching vibrations that profile differently. DFT models of the 1-hole and 2-hole CuZ sites are correlated to these spectroscopic features to determine that 2-hole CuZ has a mu2-sulfide edge ligand at neutral pH. The slow two electron (+1 proton) reduction of N2O by 1-hole CuZ is discussed and the possibility of a reaction between 2-hole CuZ and O2 is considered.

Journal of Physics B: Atomic, Molecular and Optical Physics, 48(2015) 144027. doi:10.1088/0953-4075/48/14/144027

Power Quality is a generic term focusing on several issues, going from reliability to the quality of service provided by the energy supplier. It addresses limiting aspects such as harmonic distortion, flicker, sags, swells and transients... It is important for the students to understand the differences between the large amounts of events that fit into poor power quality category. Moreover it is important for them to analyze real time non-laboratory events. To provide this experience to the students this paper presents a remote m-learning experimental system where several types of poor power quality events can be tested. The developed system is based on a power quality analysis distributed network and can be remotely accessed from a remote computer or smart phones.

Journal of Physics B: Atomic, Molecular and Optical Physics, 48(2015) 144027. doi:10.1088/0953-4075/48/14/144027