The special Professor Walter E. Spear commemoration issue of the Philosophical Magazine, published in October 2009, contains papers which cover the numerous relevant issues, driven by commercial applications, primarily solar energy and displays. Kocka reviews the complex microstructure of crystallites embedded in the amorphous silicon tissue, the transport mechanism is determined by the conductive grains and influenced by the passivation through H at the grain boundaries. Hugger and co-researchers report on transient photocapacitance spectroscopy and drive-level capacitance profiling as a way of elucidating the fundamental electronic properties of hydrogenated ncSi. Tawada recounts the history of a-Si:H pin heterojunction solar cells, emphasizing the role of the p-type silicon carbide layer in the improvement of the device. Schubert and colleagues focus their work on the production of flexible PV modules with many applications in the architectural arena or integrated into clothing.

The isolation and characterization of a new metalloprotein containing Cu and Fe atoms is reported. The as-isolated Cu-Fe protein shows an UV-visible spectrum with absorption bands at 320 nm, 409 nm and 615 nm. Molecular mass of the native protein along with denaturating electrophoresis and mass spectrometry data show that this protein is a multimer consisting of 14 +/- 1 subunits of 15254.3 +/- 7.6 Da. Mossbauer spectroscopy data of the as-isolated Cu-Fe protein is consistent with the presence of [2Fe-2S](2+) centers. Data interpretation of the dithionite reduced protein suggest that the metallic cluster could be constituted by two ferromagnetically coupled [2Fe-2S](+) spin delocalized pairs. The biochemical properties of the Cu-Fe protein are similar to the recently reported molybdenum resistance associated protein from Desulfovibrio, D. alaskensis. Further-more, a BLAST search from the DNA deduced amino acid sequence shows that the Cu-Fe protein has homology with proteins annotated as zinc resistance associated proteins from Desulfovibrio, D. alaskensis, D. vulgaris Hildenborough, D. piger ATCC 29098. These facts suggest a possible role of the Cu-Fe protein in metal tolerance. (C) 2009 Published by Elsevier Inc.

The characterization of a novel Mo-Fe protein (MorP) associated with a system that responds to Mo in Desulfovibrio alaskensis is reported. Biochemical characterization shows that MorP is a periplasmic homomultimer of high molecular weight (260 +/- 13 kDa) consisting of 16-18 monomers of 15321.1 +/- 0.5 Da. The UV/visible absorption spectrum of the as-isolated protein shows absorption peaks around 280, 320, and 570 nm with extinction coefficients of 18700, 12800, and 5000 M(-1) cm(-1), respectively. Metal content, EXAFS data and DFT calculations support the presence of a Mo-2S-[2Fe-2S]-2S-Mo cluster never reported before. Analysis of the available genomes from Desulfovibrio species shows that the MorP encoding gene is located downstream of a sensor and a regulator gene. This type of gene arrangement, called two component system, is used by the cell to regulate diverse physiological processes in response to changes in environmemtal conditions. Increase of both gene expression and protein production was observed when cells were cultured in the presence of 45 mu M molybdenum. Involvement of this system in Mo tolerance of sulfate reducing bacteria is proposed.

This paper reports the performance of small area solar cells, 128 linear integrated position sensitive detector arrays and thin film transistors based on nanostructured silicon thin films produced by plasma-enhanced chemical vapour deposition technique, close to the onset of dusty plasma conditions, within the transition region from amorphous to microcrystalline. The small area solar cells, produced in a modified single chamber reactor, exhibited very good electrical characteristics with a conversion efficiency exceeding 9%. The 128 integrated position sensitive detector arrays, based on a similar pin structure, allow real-time 3D object imaging with a resolution higher than 90 l p/mm. The thin film transistors produced exhibited field effect mobility of 2.47 cm 2/V/s, threshold voltage of 2 V, on/off ratio larger than 10 7 and sub-threshold slopes of 0.32 V/decade, which are amongst the best results reported for this type of device. © 2009 Taylor & Francis.