Nanocrystalline hydrogenated silicon (nc-Si:H) thin films are generally accepted to be a two phase material-Si crystalline and Si:H amorphous. This work reports the use of impedance spectroscopy to determine the amorphous and crystalline electrical conductivity of a/nc-Si:H films obtained by hot wire chemical vapour deposition. Different relaxation time or time constants are detected, if the film is composed by inhomogeneous material, by measuring ac impedance in a wide range of frequencies. Relating the conduction mechanism of the film to a series of two RC circuits constituted by a resistance and a capacitor in parallel, we may determine distinct ac conductivities and correlate that to the crystalline, amorphous and interface components. The amorphous films analysed exhibit one ac conductivity component while for nanocrystalline films two ac conductivity components are observed. The average value of ac conductivities is in agreement with that of dc conductivity. © 2006.

In this paper we present results of indium zinc oxide deposited at room temperature by rf magnetron sputtering, with an electron mobility as high as 60 cm2/Vs. The films present a resistivity as low as 5 × 10 - 4 Ω cm with an optical transmittance of 85%. The structure of these films seems to be polymorphous (mix of different amorphous and nanocrystalline phases from different origins) as detected from XRD patterns with a smooth surface and from SEM micrographs, is highly important to ensure a long lifetime when used in display devices. © 2005 Elsevier B.V. All rights reserved.

Hydrogenated silicon carbon nitride (SiCN:H) thin film alloys were produced by hot wire (HWCVD), plasma assisted hot wire (PA-HWCVD) and plasma enhanced chemical vapor (PECVD) deposition techniques using a Ni buffer layer as catalyst for inducing crystallization. The silicon carbon nitride films were grown using C2H4, SiH4 and NH3 gas mixtures and a deposition temperature of 300 °C. Prior to the deposition of the SiCN:H film a hydrogen etching of 10 min was performed in order to etch the catalyst material and to facilitate the crystallization. We report the influence of each deposition process on compositional, structural and morphological properties of the films. Scanning Electron Microscope-SEM and Atomic Force Measurement-AFM images show their morphology; the chemical composition was obtained by Rutherford Backscattering Spectrometry-RBS, Elastic Recoil Detection-ERD and the structure by Infrared-IR analysis. The thickness of the catalyst material determines the growth process and whether or not islands form. The production of micro-structured SiCN:H films is also dependent on the gas pressure, gas mixture and deposition process used. © 2006 Elsevier B.V. All rights reserved.

The laser scanned photodiode (LSP) presents a new concept of image sensor with application in fields where low cost, large area and design simplicity are of major importance. Over the past few years this type of sensor has been under investigation and development, where several structures have been tested and characterized. In this work we present the physical explanation of device operating principle, with recourse to numerical simulation applied to structures with different compositions of the doped layers. An electrical model for this type of device is presented, enabling a fast evaluation of the device characteristics by means of an electrical simulation program. © 2006 Elsevier B.V. All rights reserved.

This paper is mainly focused on the characterisation of a glass material (GM) obtained from the thermal treatment of a bottom ash (BA) produced at the Municipal Solid Waste (MSW) incineration plant of Valorsul. By melting the BA at 1400°C during 2 hours, and without using any chemical additives, a homogeneous black-coloured glass was obtained. The thermal and mechanical properties of this glass were characterised. The thermal expansion coefficient, measured by dilatometry, was 9-10 × 10-6 per °C and the modulus of rupture, determined by four-point bending test, was 75±6 MPa, which are similar values to those exhibited by commercial soda-lime-silica glasses used in structural applications. The chemical and the ecotoxicological leaching behaviour of the GM were also analysed. The GM was submitted to a leaching procedure composed of 15 sequential extraction cycles. A liquid/solid (L/S) ratio of 2 1/kg was applied in each cycle. The leachates were filtered through a membrane of PTFE (porosity: 0.45 μm). The filtered leachates were characterised for different chemical parameters and for an ecotoxicological indicator (bacterium Vibrio fischeri). The GM was also submitted to a microwave acidic digestion for the assessment of the total metal content. The crude BA was also submitted to the same experimental procedures. The GM showed levels of chemical emission and ecotoxicity for V. fischeri much lower than those determined for the crude BA. Similar characterisation studies will be pursued with the glass-ceramics produced by adequate thermal treatment of the glass, in order to investigate the effect of the crystallization on the final properties.

The recent application of wide band gap oxide semiconductors to transparent thin film transistors (TTFTs) is making a fast and growing (r)evolution on the contemporary solid-state electronics. In this paper we present some of the recent results we have obtained using wide band gap oxide semiconductors, like indium zinc oxide, produced by rf sputtering at room temperature. The devices work in the enhancement mode and exhibit excellent saturation drain currents. On-off ratios above 106 are achieved. The optical transmittance data in the visible range reveals average transmittance higher than 80%, including the glass substrate. Channel mobilities are also quite respectable, with some devices presenting values around 25 cm2/Vs, even without any annealing or other post deposition improvement processes. The high performances presented by these TTFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

In this paper we report some of the recent advances in transparent thin film oxide semiconductors, specifically zinc oxide (ZnO), produced by rf magnetron sputtering at room temperature with multifunctional properties. By controlling the deposition parameters it is possible to produce undoped material with electronic semiconductor properties or by doping it to get either n-type or p-type semiconductor behavior. In this work we refer our experience in producing n-type doping ZnO as transparent electrode to be used in optoelectronic applications such as solar cells and position sensitive detectors while the undoped ZnO can be used as UV photodetector or ozone gas sensor or even as active layer of fully transparent thin film transistors.

Cobalt oxide thin films were prepared by using the dipping sol-gel process. The films were deposited onto glass slides, starting from methanolic solution of cobalt acetate Co(CH3COO)2 · 4H2O. The effects of film thickness and sol concentration on structural and optical properties were studied. Structural analyses of Co3O4 films were performed by X-ray diffraction. The film thickness was varied by using different withdrawal speeds and the number of dipping-heating cycles. It was found that the grain size increases with the number of dipping N. The results point out to some compacting effect that increases with the number of dippings: the films exhibit direct and indirect optical transition, absorption coefficients are of the order of 104 cm-1, and upon annealing the absorption coefficient increases. © 2006 Elsevier B.V. All rights reserved.