Cellulosomes are highly elaborate multi-enzyme complexes of Carbohydrate Active enZYmes (CAZYmes) secreted by cellulolytic microorganisms, which very effectively degrade the most abundant polymers on Earth, cellulose and hemicelluloses. Cellulosome assembly requires that a non-catalytic dockerin module found in cellulosomal enzymes binds to one of the various cohesin domains located in a large molecular scaffold called Scaffoldin. A diversity of cohesin -dockerin binding specificities have been described, the combination of which may result in complex plant cell wall degrading systems, maximising the synergy between enzymes in order to improve catalytic efficiency. Structural studies have allowed the spatial flexibility inherent to the cellulosomal system to be determined. Recent progress achieved from the study of the fundamental cohesin and dockerin units involved in cellulosome assembly will be reviewed.

We have characterized the structure and electrical properties of p-type nanocrystalline silicon films prepared by radio-frequency plasma-enhanced chemical vapor deposition and explored optimization methods of such layers for potential applications in thin-film solar cells. Particular attention was paid to the characterization of very thin (∼20nm) films. The cross-sectional morphology of the layers was studied by fitting the ellipsometry spectra using a multilayer model. The results suggest that the crystallization process in a high-pressure growth regime is mostly realized through a subsurface mechanism in the absence of the incubation layer at the substrate-film interface. Hydrogen plasma treatment of a 22-nm-thick film improved its electrical properties (conductivity increased more than ten times) owing to hydrogen insertion and Si structure rearrangements throughout the entire thickness of the film. © 2012 National Institute for Materials Science.

A successful procedure for the in situ synthesis of silver nanoparticles by chemical reduction of a silver salt on cotton and wool textiles is reported herein. The synthesis can be advantageously performed in an aqueous system when compared with an ethanolic system. SEM studies confirmed the presence of silver nanoparticles on the treated textiles, and elemental analysis by ICP revealed that, for the aqueous system, up to 3 and 4 mg of silver per gram were deposited per gram of cotton and wool fabric, respectively. This represented an increase of up to 16-fold for cotton and 3-fold for wool compared with the ethanolic system. Thus, the difference between the aqueous and ethanolic systems was more evident for cotton, albeit more silver was deposited on wool samples in all conditions. An increase in the amount of reducing agent present resulted in more silver being deposited on the textiles when using an aqueous system. The use of water presents a great advantage for possible scale-up of the method. This simple method can be applied to produce textiles for biomedical applications or presenting conductive properties. (C) 2012 Elsevier B.V. All rights reserved.

Transparent electronics is today one of the most advanced topics for a wide range of device applications. The key components are wide bandgap semiconductors, where oxides of different origins play an important role, not only as passive component but also as active component, similar to what is observed in conventional semiconductors like silicon. Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. In this paper the recent progress in n- and p-type oxide based thin-film transistors (TFT) is reviewed, with special emphasis on solution-processed and p-type, and the major milestones already achieved with this emerging and very promising technology are summarizeed. After a short introduction where the main advantages of these semiconductors are presented, as well as the industry expectations, the beautiful history of TFTs is revisited, including the main landmarks in the last 80 years, finishing by referring to some papers that have played an important role in shaping transparent electronics. Then, an overview is presented of state of the art n-type TFTs processed by physical vapour deposition methods, and finally one of the most exciting, promising, and low cost but powerful technologies is discussed: solution-processed oxide TFTs. Moreover, a more detailed focus analysis will be given concerning p-type oxide TFTs, mainly centred on two of the most promising semiconductor candidates: copper oxide and tin oxide. The most recent data related to the production of complementary metal oxide semiconductor (CMOS) devices based on n- and p-type oxide TFT is also be presented. The last topic of this review is devoted to some emerging applications, finalizing with the main conclusions. Related work that originated at CENIMAT|I3N during the last six years is included in more detail, which has led to the fabrication of high performance n- and p-type oxide transistors as well as the fabrication of CMOS devices with and on paper. Transparent electronics is one of the most advanced science topics for a broad range of device applications. In this article an overview is presented of state-of-the-art n- and p-type oxides for TFTs and their integration, processed by physical vapor deposition and by solution processing techniques. Some of the most relevant emerging applications are also presented, including CMOS devices based on oxide TFTs fabricated on glass and even on paper. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Thin-films of copper oxide Cu x were sputtered from a metallic copper (Cu) target and studied as a function of oxygen partial pressure. A metallic Cu film with cubic structure obtained from 0% O PP has been transformed to cubic Cu x phase for the increase in O PP to 9% but then changed to monoclinic CuO phase (for. The variation in crystallite size (calculated from x-ray diffraction data) was further substantiated by the variation in grain size (surface microstructures). The Cu x films produced with O PP ranging between 9% and 75% showed p-type behavior, which were successfully applied to produce thin-film transistors. © 2006 IEEE.