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The influence of oxygen content, radio-frequency (rf) sputtering power, and postdeposition annealing on the electrical properties of gallium-indium-zinc oxide (GIZO) thin-film transistors (TFTs) is analyzed. Little to no oxygen content in the sputtering chamber is crucial to obtain high-performance devices, even before annealing. In contrast, a high oxygen content and rf power lead, respectively, to unstable/poor performing and depletion mode TFTs before annealing, and mainly for these "nonideal" conditions, annealing proves to be effective to improve device performance/stability and to decrease the performance discrepancy among TFTs processed under different oxygen and rf power conditions. Best TFTs present a field-effect mobility of 46 cm2 / V s, subthreshold swing of 0.26 V/dec, threshold voltage of 0.70 V, and an on/off ratio 108 - 109. These results are a consequence of the optimized processing and of the usage of proper GIZO target composition, 1:2:1 mol. © 2008 The Electrochemical Society.

Lately the electrical and dielectric properties of cork and some cork-based materials (commercial and non-commercial) have been studied in order to understand their ability to store electrical charge. The main problem found so far is related to the water content in cork, only of a few % weight. but large enough to influence greatly the conductivity of cork and, consequently, the charge storage capability. To overcome this problem cork has been combined with hydrophobic materials. In this work a commercial wax (paraffin wax) was used to produce a cork/paraffin composite by hot pressing. After milled and mixed natural cork. TetraPak (R) containers waste and paraffin were pressed to make plaques of a new composite. Different concentrations of cork. TetraPak (R) and paraffin, different granules sire, different temperature and pressure were used to produce the samples. The electrical properties of the new composite were measured by the isothermal charging and discharging current method and the results compared to previously ones obtained for natural cork and other derivative products. The new composite has shown to have lower conductivity than the commercial agglomerate. which makes it a better material for charge storage.

Lately the electrical and dielectric properties of cork and some cork-based materials (commercial and non-commercial) have been studied in order to understand their ability to store electrical charge. The main problem found so far is related to the water content in cork, only of a few % weight. but large enough to influence greatly the conductivity of cork and, consequently, the charge storage capability. To overcome this problem cork has been combined with hydrophobic materials. In this work a commercial wax (paraffin wax) was used to produce a cork/paraffin composite by hot pressing. After milled and mixed natural cork. TetraPak (R) containers waste and paraffin were pressed to make plaques of a new composite. Different concentrations of cork. TetraPak (R) and paraffin, different granules sire, different temperature and pressure were used to produce the samples. The electrical properties of the new composite were measured by the isothermal charging and discharging current method and the results compared to previously ones obtained for natural cork and other derivative products. The new composite has shown to have lower conductivity than the commercial agglomerate. which makes it a better material for charge storage.

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During the last years, oxide semiconductors have shown that they will have a key role in the future of electronics. In fact, several research groups have already presented working devices with remarkable electrical and optical properties based on these materials, mainly thin-film transistors (TFTs). Most of these TFTs use indium-tin oxide (ITO) as the material for source/drain electrodes. This paper focuses on the investigation of different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO) semiconductor. The analyzed electrode materials were indium-zinc oxide, Ti, Al, Mo, and Ti/Au, with each of these materials used in two different kinds of devices: one was annealed after GIZO channel deposition but prior to source/drain deposition, and the other was annealed at the end of device production. The results show an improvement on the electrical properties when the annealing is performed at the end (for instance, with Ti/Au electrodes, mobility rises from 19 to 25 cm2/V · s, and turn-on voltage drops from 4 to 2 V). Using time-of-flight secondary ion mass spectrometry (TOF-SIMS), we could confirm that some diffusion exists in the source/drain electrodes/ semiconductor interface, which is in close agreement with the obtained electrical properties. In addition to TOF-SIMS results for relevant elements, electrical characterization is presented for each kind of device, including the extraction of source/drain series resistances and TFT intrinsic parameters, such as VTi (intrinsic threshold voltage). © 2008 IEEE.

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The thermally stimulated discharge current (TSDC.) method is a very sensitive and a very selective technique to analyze dipole disorientation and the movement of de-trapped space charge (SC). We have proposed a variant of the TSDC method, namely the final thermally stimulated discharge current (FTSDC) technique. flee experimental conditions can be selected so that the FTSDC is mainly determined by the SC de-trapping. The temperatures of the maximum intensity of the fractional polarization peaks obtained at low temperature, in the range of the local (secondary) relaxation, are in general about 10 to 20 K above the poling temperature. Measurements of the FTSDC in a wide temperature range demonstrate the existence of an apparent peak at a temperature T-ma shifted with about 10 to 30 K above the charging temperature T-c. The shift of T-ma with respect to T-c depends on the experimental conditions. The peak width at the half maximum intensity decreases as T-c increases and the thermal apparent activation energy increases. The variations are not monotonous revealing the temperature range where the molecular motion is stronger and consequently the charge trapping and de-trapping processes are affected. Our results demonstrate that there is a strong similarity between the elementary peaks obtained by the two methods, and the current is mainly determined by SC de-trapping. Even the best elementary peaks are not fitted very well by the analytical equation, indicating that the hypothesis behind this equation have to be reconsidered.

The thermally stimulated discharge current (TSDC.) method is a very sensitive and a very selective technique to analyze dipole disorientation and the movement of de-trapped space charge (SC). We have proposed a variant of the TSDC method, namely the final thermally stimulated discharge current (FTSDC) technique. flee experimental conditions can be selected so that the FTSDC is mainly determined by the SC de-trapping. The temperatures of the maximum intensity of the fractional polarization peaks obtained at low temperature, in the range of the local (secondary) relaxation, are in general about 10 to 20 K above the poling temperature. Measurements of the FTSDC in a wide temperature range demonstrate the existence of an apparent peak at a temperature T-ma shifted with about 10 to 30 K above the charging temperature T-c. The shift of T-ma with respect to T-c depends on the experimental conditions. The peak width at the half maximum intensity decreases as T-c increases and the thermal apparent activation energy increases. The variations are not monotonous revealing the temperature range where the molecular motion is stronger and consequently the charge trapping and de-trapping processes are affected. Our results demonstrate that there is a strong similarity between the elementary peaks obtained by the two methods, and the current is mainly determined by SC de-trapping. Even the best elementary peaks are not fitted very well by the analytical equation, indicating that the hypothesis behind this equation have to be reconsidered.

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Adenylate kinase (AK) mediates the reversible transfer of phosphate groups between the adenylate nucleotides and contributes to the maintenance of their constant cellular level, necessary for energy metabolism and nucleic acid synthesis. The AK were purified from crude extracts of two sulfate-reducing bacteria (SRB), Desulfovibrio (D.) gigas NCIB 9332 and Desulfovibrio desulfuricans ATCC 27774, and biochemically and spectroscopically characterised in the native and fully cobalt- or zinc-substituted forms. These are the first reported adenylate kinases that bind either zinc or cobalt and are related to the subgroup of metal-containing AK found, in most cases, in Gram-positive bacteria. The electronic absorption spectrum is consistent with tetrahedral coordinated cobalt, predominantly via sulfur ligands, and is supported by EPR. The involvement of three cysteines in cobalt or zinc coordination was confirmed by chemical methods. Extended X-ray absorption fine structure (EXAFS) indicate that cobalt or zinc are bound by three cysteine residues and one histidine in the metal-binding site of the "LID" domain. The sequence (129)Cys-X(5)-His-X(15)-Cys-X(2)-Cys of the AK from D. gigas is involved in metal coordination and represents a new type of binding motif that differs from other known zinc-binding sites of AK. Cobalt and zinc play a structural role in stabilizing the LID domain. (C) 2008 Elsevier Inc. All rights reserved.

The theory of domain decomposition is described and used to divide the variable domain of a diatomic molecule into separate regions which are solved independently. This approach makes it possible to use fast Krylov methods in the broad interior of the region while using explicit methods such as Gaussian elimination on the boundaries. As is demonstrated by solving a number of model problems, these methods enable one to obtain solutions of the relevant partial differential equations and eigenvalue equations accurate to six significant figures with a small amount of computational time. Since the numerical approach described in this article decomposes the variable space into separate regions where the equations are solved independently, our approach is very well-suited to parallel computing and offers the long term possibility of studying complex molecules by dividing them into smaller fragments that are calculated separately.

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Indium tin oxide (ITO) has been used as the prefered electrode material for the emerging area of transparent electronics, namely for thin-film transistors (TFTs) based on oxide semiconductors. This work pretends to investigate different materials to replace ITO in inverted-staggered TFTs based on gallium-indium-zinc oxide (GIZO), one of the most promissing oxide semiconductors for TFTs. The analyzed electrode materials are indium-zinc oxide (IZO), Ti, Mo and Ti/Au. Devices are analyzed with special focus on the contact resistance fundamentals, including the extraction of source/ drain series resistances and TFTs intrinsic parameters, such as intrinsic mobility (p\) and intrinsic threshold voltage (V Ti). The obtained contact resistance values are between 10 kΩ and 20 kΩ, and the best devices have field effect mobility ((μ FE) close to 25 cm 2/V s and on/off ratio close to 10 8. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.

Various metal oxide-silica nanocomposite films have been recently proposed as gas-sensitive materials. This paper presents results on cobalt oxide-SiO2 mesoporous nanocomposite thin films templated by a cationic surfactant. The films were deposited on glass substrate by dip-coating process, using [Co(CH3COO)2]·4H2O and tetraethoxysilane (TEOS) as starting materials. The effect of withdrawal speed, number of layers and thermal treatment on the crystalline structure, morphology, Co-doping states, optical, electrical and gas sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and room temperature photoreduction-oxidation data. © 2007 Elsevier B.V. All rights reserved.

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