Plasmonic light trapping in thin film silicon solar cells is a promising route to achieve high efficiency with reduced volumes of semiconductor material. In this paper, we study the enhancement in the opto-electronic performance of thin a-Si:H solar cells due to the light scattering effects of plasmonic back reflectors (PBRs), composed of self-assembled silver nanoparticles (NPs), incorporated on the cells{&}{\#}x2019; rear contact. The optical properties of the PBRs are investigated according to the morphology of the NPs, which can be tuned by the fabrication parameters. By analyzing sets of solar cells built on distinct PBRs we show that the photocurrent enhancement achieved in the a-Si:H light trapping window (600 {&}{\#}x2013; 800 nm) stays in linear relation with the PBRs diffuse reflection. The best-performing PBRs allow a pronounced broadband photocurrent enhancement in the cells which is attributed not only to the plasmon-assisted light scattering from the NPs but also to the front surface texture originated from the conformal growth of the cell material over the particles. As a result, remarkably high values of Jsc and Voc are achieved in comparison to those previously reported in the literature for the same type of devices.

© 2014 American Institute of Chemical Engineers. Significance: Natural deep eutectic solvents (NADES) are defined as a mixture of two or more solid or liquid components, which at a particular composition present a high melting point depression becoming liquids at room temperature. NADES are constituted by natural molecules and fully represent the green chemistry principles. For these reasons, the authors believe that the submitted manuscript is a highly valuable contribution to the field of green chemistry and chemical engineering. For the first time, the possibility to use NADES as enhancers of supercritical fluid technology is revealed.

© 2014 IOP Publishing Ltd. This work reports on highly efficient surface enhanced Raman spectroscopy (SERS) constructed on low-cost, fully recyclable and highly reproducible cardboard plates, which are commonly used as disposable packaging material. The active optical component is based on plasmonic silver nanoparticle structures separated from the metal surface of the cardboard by a nanoscale dielectric gap. The SERS response of the silver (Ag) nanoparticles of various shapes and sizes were systematically investigated, and a Raman enhancement factor higher than 106for rhodamine 6G detection was achieved. The spectral matching of the plasmonic resonance for maximum Raman enhancement with the optimal local electric field enhancement produced by 60 nm-sized Ag NPs predicted by the electromagnetic simulations reinforces the outstanding results achieved. Furthermore, the nanoplasmonic SERS substrate exhibited high reproducibility and stability. The SERS signals showed that the intensity variation was less than 5{%}, and the SERS performance could be maintained for up to at least 6 months.

Green technology actively seeks new solvents to replace common organic solvents that present inherent toxicity and have high volatility, leading to evaporation of volatile organic compounds to the atmosphere. Over the past two decades, ionic liquids (ILs) have gained enormous attention from the scientific community, and the number of reported articles in the literature has grown exponentially. Nevertheless, IL "greenness" is often challenged, mainly due to their poor biodegradability, biocompatibility, and sustainability. An alternative to ILs are deep eutectic solvents (DES). Deep eutectic solvents are defined as a mixture of two or more components, which may be solid or liquid and that at a particular composition present a high melting point depression becoming liquids at room temperature. When the compounds that constitute the DES are primary metabolites, namely, aminoacids, organic acids, sugars, or choline derivatives, the DES are so called natural deep eutectic solvents (NADES). NADES fully represent green chemistry principles. Can natural deep eutectic solvents be foreseen as the next generation solvents and can a similar path to ionic liquids be outlined? The current state of the art concerning the advances made on these solvents in the past few years is reviewed in this paper, which is more than an overview on the different applications for which they have been suggested, particularly, biocatalysis, electrochemistry, and extraction of new data. Citotoxicity of different NADES was evaluated and compared to conventional imidazolium-based ionic liquids, and hints at the extraction of phenolic compounds from green coffee beans and on the foaming effect of NADES are revealed. Future perspectives on the major directions toward which the research on NADES is envisaged are here discussed, and these comprised undoubtedly a wide range of chemically related subjects. © 2014 American Chemical Society.

Marine biomaterials are a new emerging area of research with significant applications. Recently, researchers are dedicating considerable attention to marine-sponge biomaterials for various applications. We have focused on the potential of biosilica from Petrosia ficidormis for novel biomedical/industrial applications. A bioceramic structure from this sponge was obtained after calcination at 750 °C for 6 h in a furnace. The morphological characteristics of the three-dimensional architecture were evaluated by scanning electron microscopy (SEM) and microcomputed tomography, revealing a highly porous and interconnected structure. The skeleton of P. ficidormis is a siliceous matrix composed of SiO2, which does not present inherent bioactivity. Induction of bioactivity was attained by subjecting the bioceramics structure to an alkaline treatment (2M KOH) and acidic treatment (2M HCl) for 1 and 3 h. In vitro bioactivity of the bioceramics structure was evaluated in simulated body fluid (SBF), after 7 and 14 days. Observation of the structures by SEM, coupled with spectroscopic elemental analysis (EDS), has shown that the surface morphology presented a calcium-phosphate CaP coating, similar to hydroxyapatite (HA). The determination of the Ca/P ratio, together with the evaluation of the characteristic peaks of HA by infrared spectroscopy and X-ray diffraction, have proven the existence of HA. In vitro biological performance of the structures was evaluated using an osteoblast cell line, and the acidic treatment has shown to be the most effective treatment. Cells were seeded on bioceramics structures and their morphology; viability and growth were evaluated by SEM, MTS assay, and DNA quantification, respectively, demonstrating that cells are able to grow and colonize the bioceramic structures. © 2014 American Chemical Society.

{{A series of new cationic and neutral (Ar-BIAN) copper(I) complexes {[}in which Ar-BIAN = bis(aryl)acenaphthenequinonediimine] was synthesised and characterised by elemental analysis, 1D and 2D NMR spectroscopy and single-crystal Xray diffraction. The cationic complexes of the general formula {[}Cu(Ar-BIAN)L-2]BF4 {[}L-2 = (PPh3)(2) (1), dppe (2), dppf (3), (AsPh3)(2) (4); Ar = 4-iPrC(6)H(4) (a), 4-MeOC6H4 (b), 4-NO2C6H4 (c), 2-iPrC(6)H(4) (d), Ph2PCH2CH2PPh2 (dppe), (Ph2PC5H4)(2)Fe (dppf)] were synthesised by reaction of {[}Cu(EPh3)(4)]BF4 (E = P or As) and equimolar amounts of Ar-BIAN ligands, or by reaction of equimolar amounts of {[}Cu(NCMe)(4)]BF4, 4-iPrC(6)H(4)-BIAN (a) and diphosphanes dppe or dppf, in dichloromethane, whereas the neutral complexes of the types {[}CuX(Ar-BIAN)(EPh3)] {[}X = Cl

{{Abstract A variety of N-heterocyclic carbene (NHC) zinc adducts of the type NHC-ZnMe2 {[}2a

CuxS thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu2S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of CuxS films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 degrees C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show CuxS films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the CuxS films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of CuxS surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of CuxS films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the CuxS material. (c) 2013 Elsevier B.V. All rights reserved.

CuxS thin films, 80 nm thick, are deposited by vacuum thermal evaporation of sulfur-rich powder mixture, Cu2S:S (50:50 wt.%) with no intentional heating of the substrate. The process of deposition occurs at very low deposition rates (0.1-0.3 nm/s) to avoid the formation of Cu or S-rich films. The evolution of CuxS films surface properties (morphology/roughness) under post deposition mild annealing in air at 270 degrees C and their integration in a thin film transistor (TFT) are the main objectives of this study. Accordingly, Scanning Electron Microscopy studies show CuxS films with different surface morphologies, depending on the post deposition annealing conditions. For the shortest annealing time, the CuxS films look to be constructed of grains with large dimension at the surface (approximately 100 nm) and consequently, irregular shape. For the longest annealing time, films with a fine-grained surface are found, with some randomly distributed large particles bound to this fine-grained surface. Atomic Force Microscopy results indicate an increase of the root-mean-square roughness of CuxS surface with annealing time, from 13.6 up to 37.4 nm, for 255 and 345 s, respectively. The preliminary integration of CuxS films in a TFT bottom-gate type structure allowed the study of the feasibility and compatibility of this material with the remaining stages of a TFT fabrication as well as the determination of the p-type characteristic of the CuxS material. (c) 2013 Elsevier B.V. All rights reserved.

Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced Chemical Vapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation was done in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from the amorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods and temperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si: H films prior to diffusion, both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the range of 98 nm to 2.4 mu m and surface concentrations are in the range of 1.1 x 10(21) to 4.3 x 10(20) at/cm(3). A dual diffusion mechanism explains the ``kink-and-tail{''} shape found for dopant profile. (C) 2013 Elsevier B.V. All rights reserved.

Phosphorus-doped amorphous silicon thin films, deposited at low temperatures by Plasma Enhanced Chemical Vapour Deposition were used as a dopant source on p-type c-Si substrates. A careful step of dehydrogenation was done in order to maintain the a-Si thin-film integrity. Subsequently, a fine-controlled drive-in of dopant, from the amorphous layer to the crystalline wafer was done, to form the p/n junction, using different time periods and temperatures. Dopant profiling in c-Si wafers as well as dopant concentration in a-Si: H films prior to diffusion, both measured by Secondary Ion Mass Spectrometry, are presented. Junction depths obtained are in the range of 98 nm to 2.4 mu m and surface concentrations are in the range of 1.1 x 10(21) to 4.3 x 10(20) at/cm(3). A dual diffusion mechanism explains the ``kink-and-tail{''} shape found for dopant profile. (C) 2013 Elsevier B.V. All rights reserved.

A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.

A model is proposed to describe the decrease of H content in hydrogenated amorphous silicon (a-Si: H), during annealing at a fixed temperature. H content has been measured in several a-Si: H samples ( grown by plasma enhanced chemical vapor deposition) after being submitted to different annealing times at 400 degrees C. Obtained data has been fitted to the proposed model and initial diffusion coefficients of 3.2 x 10(-14) cm(2)/s for intrinsic films and 4.2 x 10(-14) cm(2)/s for n-type films were obtained. Reversely, H content evolution can be predicted during a thermal treatment if diffusion coefficients are previously known. (C) 2013 Elsevier B.V. All rights reserved.