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Pereira, Lu\'ıs, Pedro Barquinha, Gonçalo Gonçalves, Elvira Fortunato, and Rodrigo Martins. "{Multicomponent dielectrics for oxide TFT}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826316–16. Abstract
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Fortunato, E., Barquinha, P., Pereira, and L. "{Multicomponent wide band gap oxide semiconductors for thin film transistors}." (2006): 605-608. AbstractWebsite
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Fortunato, E., Goncalves, A., and Marques. "{Multifunctional thin film zinc oxide semiconductors: Application to electronic devices}." 514-516 (2006): 3-7. AbstractWebsite
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Gaspar, D., S. N. Fernandes, G. dea Oliveira, J. G. Fernandes, P. Grey, R. V. Pontes, L. Pereira, R. Martins, M. H. Godinho, and E. Fortunato. "{Nanocrystalline cellulose applied simultaneously as the gate dielectric and the substrate in flexible field effect transistors.}." Nanotechnology. 25 (2014): 094008. AbstractWebsite

Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.

Pereira, L., H. Águas, E. Fortunato, and R. Martins. "{Nanostructure characterization of high k materials by spectroscopic ellipsometry}." Applied Surface Science. 253 (2006): 339-343. AbstractWebsite
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Martins, R., L. Raniero, L. Pereira, D. Costa†, H. Águas, S. Pereira, L. Silva, A. Gonçalves, I. Ferreira, and E. Fortunato. "{Nanostructured silicon and its application to solar cells, position sensors and thin film transistors}." Philosophical Magazine. 89 (2009): 2699-2721. AbstractWebsite
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Pereira, L., H. Águas, L. Gomes, P. Barquinha, E. Fortunato, and R. Martins. "{Nanostructured Silicon Based Thin Film Transistors Processed in the Plasma Dark Region}." Journal of Nanoscience and Nanotechnology. 10 (2010): 2938-2943. AbstractWebsite
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Fortunato, Elvira, Barquinha, Pedro, Goncalves, and Goncalo. "{New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)}." 587-588 (2008): 348-352. AbstractWebsite
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Fortunato, E., A. Gonçalves, A. Marques, A. Viana, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{New developments in gallium doped zinc oxide deposited on polymeric substrates by RF magnetron sputtering}." Surface and Coatings Technology. 180-181 (2004): 20-25. AbstractWebsite
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Brida, D., E. Fortunato, H. Águas, V. Silva, A. Marques, L. Pereira, I. Ferreira, and R. Martins. "{New insights on large area flexible position sensitive detectors}." Journal of Non-Crystalline Solids. 299-302 (2002): 1272-1276. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Next generation of thin film transistors based on zinc oxide}." 811 (2004): 347-352. AbstractWebsite
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Pereira, L., R. M. S. Martins, N. Schell, E. Fortunato, and R. Martins. "{Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer}." Thin Solid Films. 511-512 (2006): 275-279. AbstractWebsite
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Fortunato, E., L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. Gonçalves, A. Gonçalves, and R. Martins. "{Oxide semiconductors: Order within the disorder}." Philosophical Magazine. 89 (2009): 2741-2758. AbstractWebsite
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Martins, R., V. Figueiredo, R. Barros, P. Barquinha, G. Gonçalves, L. Pereira, I. Ferreira, and E. Fortunato. "{P-type oxide-based thin film transistors produced at low temperatures}." Eds. Ferechteh H. Teherani, David C. Look, and David J. Rogers. Vol. 8263. 2012. 826315–15. Abstract
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Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, D. Kuščer, M. Kosec, and E. Fortunato. "{Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics}." Journal of The Electrochemical Society. 156 (2009): H824. AbstractWebsite
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Cabrita, A., J. Figueiredo, L. Pereira, V. Silva, D. Brida, E. Fortunato, and R. Martins. "{Performance of a-Six:C1−x:H Schottky barrier and pin diodes used as position sensitive detectors}." Journal of Non-Crystalline Solids. 299-302 (2002): 1277-1282. AbstractWebsite
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Pereira, L., A. Marques, H. Águas, N. Nedev, S. Georgiev, E. Fortunato, and R. Martins. "{Performances of hafnium oxide produced by radio frequency sputtering for gate dielectric application}." Materials Science and Engineering: B. 109 (2004): 89-93. AbstractWebsite
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Parthiban, Shanmugam, Elamurugu Elangovan, Pradipta K. Nayak, Alexandra Gonçalves, Daniela Nunes, Lu\'ıs Pereira, Pedro Barquinha, Tito Busani, Elvira Fortunato, and Rodrigo Martins. "{Performances of Microcrystalline Zinc Tin Oxide Thin-Film Transistors Processed by Spray Pyrolysis}." 9 (2013): 825-831. Abstract
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Branquinho, Rita, Joana V. Pinto, Tito Busani, Pedro Barquinha, Luis Pereira, Pedro Viana Baptista, Rodrigo Martins, and Elvira Fortunato. "{Plastic Compatible Sputtered Ta O Sensitive Layer for Oxide Semiconductor TFT Sensors}." 9 (2013): 723-728. Abstract
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Pereira, L, Barquinha, P, Fortunato, and E. "{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}." 514-516 (2006): 28-32. AbstractWebsite
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Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "{Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices}." Thin Solid Films. 487 (2005): 212-215. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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