Publications

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2006
Pereira, L, Barquinha, P, Fortunato, and E. "{Electrical performances of low temperature annealed hafnium oxide deposited at room temperature}." 514-516 (2006): 58-62. AbstractWebsite
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Fortunato, E., Barquinha, P., Pereira, and L. "{Multicomponent wide band gap oxide semiconductors for thin film transistors}." (2006): 605-608. AbstractWebsite
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Fortunato, E., Goncalves, A., and Marques. "{Multifunctional thin film zinc oxide semiconductors: Application to electronic devices}." 514-516 (2006): 3-7. AbstractWebsite
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Pereira, L., R. M. S. Martins, N. Schell, E. Fortunato, and R. Martins. "{Nickel-assisted metal-induced crystallization of silicon: Effect of native silicon oxide layer}." Thin Solid Films. 511-512 (2006): 275-279. AbstractWebsite
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Pereira, L, Barquinha, P, Fortunato, and E. "{Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization}." 514-516 (2006): 28-32. AbstractWebsite
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2005
Pimentel, A., E. Fortunato, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, and R. Martins. "{Polycrystalline intrinsic zinc oxide to be used in transparent electronic devices}." Thin Solid Films. 487 (2005): 212-215. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, A. Gonçalves, A. Marques, L. Pereira, and R. Martins. "{Recent advances in ZnO transparent thin film transistors}." Thin Solid Films. 487 (2005): 205-211. AbstractWebsite
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Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Gon�alves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "{Fully Transparent ZnO Thin-Film Transistor Produced at Room Temperature}." Advanced Materials. 17 (2005): 590-594. AbstractWebsite
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Pereira, L., H. Águas, P. Vilarinho, E. Fortunato, and R. Martins. "{Metal induced crystallization: Gold versus aluminium}." Journal of Materials Science. 40 (2005): 1387-1391. AbstractWebsite
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Fortunato, E., L. Pereira, H. Aguas, I. Ferreira, and R. Martins. "{Flexible a-Si:H Position-Sensitive Detectors}." Proceedings of the IEEE. 93 (2005): 1281-1286. AbstractWebsite
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Martins, R., P. Barquinha, A. Pimentel, L. Pereira, and E. Fortunato. "{Transport in high mobility amorphous wide band gap indium zinc oxide films}." physica status solidi (a). 202 (2005): R95-R97. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide}." Materials Science and Engineering: B. 118 (2005): 210-213. AbstractWebsite
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Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "{Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors}." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite
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Fortunato, E, Barquinha, P, Pimentel, and A. "{Zinc oxide thin-film transistors}." 194 (2005): 225-238. AbstractWebsite
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2004
Fortunato, Elvira, Luı́s Pereira, Hugo Águas, Isabel Ferreira, and Rodrigo Martins. "{Flexible position sensitive photodetectors based on a-Si:H heterostructures}." Sensors and Actuators A: Physical. 116 (2004): 119-124. AbstractWebsite
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Fortunato, E., V. Assunção, A. Gonçalves, A. Marques, H. Águas, L. Pereira, I. Ferreira, P. Vilarinho, and R. Martins. "{High quality conductive gallium-doped zinc oxide films deposited at room temperature}." Thin Solid Films. 451-452 (2004): 443-447. AbstractWebsite
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Pereira, L., H. Águas, R. M. S. Martins, P. Vilarinho, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by metal induced crystallization using different metals}." Thin Solid Films. 451-452 (2004): 334-339. AbstractWebsite
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Ferreira, I. "{Properties of a-Si:H intrinsic films produced by HWPA-CVD technique}." Thin Solid Films. 451-452 (2004): 366-369. AbstractWebsite
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Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
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Pereira, L., H. Águas, R. M. Martins, E. Fortunato, and R. Martins. "{Polycrystalline silicon obtained by gold metal induced crystallization}." Journal of Non-Crystalline Solids. 338-340 (2004): 178-182. AbstractWebsite
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Barquinha, P., L. Pereira, H. Águas, E. Fortunato, and R. Martins. "{Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering}." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite
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Aguas, H, Pereira, L, Ferreira, and I. "{Effect of annealing on gold rectifying contacts in amorphous silicon}." 455-456 (2004): 96-99. AbstractWebsite
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Fortunato, E, Pimentel, A, Pereira, and L. "{High field-effect mobility zinc oxide thin film transistors produced at room temperature}." 338 (2004): 806-809. AbstractWebsite
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Martins, RMS, Silva, M. A. G., RJC, Fernandes, and FMB. "{In-situ GIXRD characterization of the crystallization of Ni-Ti sputtered thin films}." 455-456 (2004): 342-345. AbstractWebsite
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