A uniform shiny black-coloured glass was obtained using bottom ash produced by a Portuguese municipal solid waste incinerator (MSWI). The bottom ash was the single batch material used in the formation of the glass, which was obtained by vitrification of the solid waste at 1400 °C for 2 h. Under these conditions, a homogeneous melt with an appropriate viscosity to be shaped was obtained, indicating the suitability of this waste material to be employed in the development of vitreous products. The characterization of the resulting glass was performed in order to assess its structural, physical, mechanical, thermal and chemical features. The glass had a density of 2.69 g cm -3, a hardness of 5.5 GPa, a fracture strength of 75 MPa, a thermal expansion coefficient of 9.5 × 10-6 °C-1 and it exhibited a very good chemical stability. In summary, the MSWI bottom ash glass has good mechanical and chemical properties and may, therefore, be used in several applications, particularly as a construction material. © 2005 Elsevier B.V. All rights reserved.

Fly ash from Tapada do Outeiro, a coal power plant in the north of Portugal, has been processed by a powder technology route in order to obtain durable and mechanical resistant ceramics. Dolomite (CaC03.MgC03) was added in different proportions to the waste material, from zero up to 10 wt%, and the effect of this addition on the densification behaviour of the fired samples was investigated by measuring the apparent density, the open porosity and the linear shrinkage. The powder mixtures were uniaxially dry pressed in a steel die and fired at temperatures ranging from 950 to 1150°C XRD and SEM were used to identify the phases present in the sintered materials and the degree of densification. The results revealed that added dolomite was responsible for the appearance of anorthite, an extra phase besides mullite and quartz, for an increase in the amount of liquid phase and for the swelling of closed pores at the highest firing temperatures. Significant morphological changes and phase transformations occurred during sintering and their effects on the physical-mechanical and leaching characteristics of the sintered materials were analyzed.

In this work, the relation between oxidant/monomer ratio and the electrical conductivity of polypyrrole was studied using different ratios. We achieved a maximum value for electrical conductivity of 7.5 S/cm for a ratio of 2:1. We also developed a chemical dip-coating process to produce the cathode layer in tantalum capacitors. We obtained capacitances of about 80 μF after 8 cycles using the sequence Monomer/Oxidant.

This paper presents the effect of post-heating temperature and atmosphere on the electrical and optical properties of ZnO:Al thin films prepared by the sol-gel method. The electrical properties of the n-type semiconductor thin films showed that for the final films, the values of carrier concentration ranged between 2.76 and 9.96 × 1019 cm- 3, the Hall mobility values between 7 and 34.1 cm2/V s and the resistivity values between 2.9 × 10- 3 and 5.0 × 10- 2 Ω cm, depending on the processing conditions. For the thin film doped with 2 wt.% Al, preheated at 400 °C and post-heated for 1 h in air at 600 °C, a resistivity of 2.9 × 10- 3 Ω cm has been reached after annealing under a reducing atmosphere of forming gas. The optical transmittance spectra of the only post-heated films and of the post-heated and annealed films showed a good transmittance (75-90%) within the visible wavelength region and some small effects of Al-doping concentration and annealing treatment in forming gas. © 2005 Elsevier B.V. All rights reserved.

Insensitivity to light irradiation is desirable for conventional applications of thin-film transistors, i.e., the active matrices of displays. However, if one produces a device presenting controlled sensitivity to light, many other applications can benefit or can even be created. In this work it is shown the influence of the photon energy on the optoelectronic properties presented by n-type bottom-gate thin-film transistors based on indium zinc oxide. In the dark, the devices present very good electrical properties, working in the enhancement mode, exhibiting on-off ratios higher than 107 and channel mobility above 30 cm2/V s. Remarkable results were achieved when the devices were exposed to light radiation, the most striking one is the possibility to switch between enhancement (in the dark) and depletion (illuminated) modes, with different threshold voltages and on/off ratios, function of the light power density and wavelength used. This type of behavior permits to design circuits where one can have the same transistor working either in the enhancement or depletion modes, function of the light beam and intensity impinging on it, highly important for short wavelength detector applications. © 2006 Elsevier B.V. All rights reserved.

In this work, HfO2 was deposited by r.f. sputtering at room temperature and then annealed for different times at 200°C in a forming gas atmosphere. After annealing for 2 hours the HfO2 layers present a reduction on the flat band voltage of about 1 V, relatively to the as deposited film, decreasing from -2.23V down to -1.28 V. This means an improvement of the interface properties and a reduction on the oxide charge density from 1.33×1012 cm-2 to 7.62×1011 cm -2. The dielectric constant reaches a maximum of 18.3 after 5h annealing due to film's densification. When annealing for longer times such as 10h a small degradation of the electrical properties is observed. After 10h annealing the dielectric constant, flat band voltage and fixed charge density are respectively, 14.9, -2.96 V and 1.64×1012 cm-2 and the leakage current also increases due to film's crystallization.

Nanocrystalline hydrogenated silicon (nc-Si:H) thin films are generally accepted to be a two phase material-Si crystalline and Si:H amorphous. This work reports the use of impedance spectroscopy to determine the amorphous and crystalline electrical conductivity of a/nc-Si:H films obtained by hot wire chemical vapour deposition. Different relaxation time or time constants are detected, if the film is composed by inhomogeneous material, by measuring ac impedance in a wide range of frequencies. Relating the conduction mechanism of the film to a series of two RC circuits constituted by a resistance and a capacitor in parallel, we may determine distinct ac conductivities and correlate that to the crystalline, amorphous and interface components. The amorphous films analysed exhibit one ac conductivity component while for nanocrystalline films two ac conductivity components are observed. The average value of ac conductivities is in agreement with that of dc conductivity. © 2006.

The electrosynthesis of polypyrrole (PPy) has been achieved on aluminium in aqueous medium of tartaric acid by means of cyclic voltammetry, potentiostatic and galvanostatic techniques. Scanning electron microscopy (SEM) and X-ray microanalysis by energy spectroscopy dispersion (EDS) applying on surfaces show that the PPy coating is developed from the metal surface through the cracks of the initial Al2O3 layer. A mechanism involving the participation of the supporting electrolyte and the pyrrole (Py) in distinct active sites was proposed based on the linear sweep voltammetry. It is observed for all applied electrochemical techniques that the pyrrole concentration has to be higher than 0.1 M to allow the polypyrrole electrodeposition in acid medium. Scanning electron microscopy, secondary electrons (SE) and backscattering electrons (BE), shows that the PPy coating obtained in galvanostatic and potentiostatic modes starts with small islands at weak applied potentials or current densities. Moreover, EDS reveals a good homogeneity and compactness of the film achieved in galvanostatic method. The corrosion results in 3% NaCl medium show that the PPy coating decreases the corrosion behaviour of the aluminium. The bilayer Al2O3/PPy shows a capacitor with future applications. © 2006 Elsevier Ltd. All rights reserved.

This paper discusses the electron transport and the optical characteristics of amorphous indium zinc oxide and the role of the oxygen partial pressure on tailoring its properties. The data show that by varying the oxygen partial pressure during the deposition process from 10-3 to 2 × 10-1 Pa, the electrical resistivity varies from about 10-4 to 2 × 101 Ω cm, which corresponds to a variation on the Hall mobility from 60 to 10 cm2 V-1 s-1. The conductivity and mobility analysis show that the transport of carriers is not band tail limited, as happens in conventional disordered semiconductors, but highly dependent on the ionicity and the presence of oxygen vacancies, where mobility is mainly limited by carrier scattering. The optical characteristics inferred from the transmittance data reveal films with optical gaps in the range of 3.68-3.76 eV, very close to the ones observed on crystalline/polycrystalline IZO films (3.7-3.9 eV). © 2006 Elsevier B.V. All rights reserved.