de Calheiros Velozo, A., G. Lavareda, C. Nunes de Carvalho, and A. Amaral. "
Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition."
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11. Eds. S. Pizzini, G. Kissinger, H. YamadaKaneta, and J. Kang. Vol. 9. Physica Status Solidi C-Current Topics in Solid State Physics, 9. European Mat Res Soc (E-MRS), 2012. 2198-2202.
AbstractSamples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
de Calheiros Velozo, A., G. Lavareda, C. Nunes de Carvalho, and A. Amaral. "
Thermal dehydrogenation of amorphous silicon deposited on c-Si: Effect of the substrate temperature during deposition."
PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 9, NO 10-11. Eds. S. Pizzini, G. Kissinger, H. YamadaKaneta, and J. Kang. Vol. 9. Physica Status Solidi C-Current Topics in Solid State Physics, 9. European Mat Res Soc (E-MRS), 2012. 2198-2202.
AbstractSamples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim
Barquinha, P., Martins Pereira Fortunato R. L. E. Transparent Oxide Electronics: From Materials to Devices. Transparent Oxide Electronics: From Materials to Devices., 2012.
AbstractTransparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) - structure, physics and brief history Paper electronics - Paper transistors, paper memories and paper batteries Applications of oxide TFTs - transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors. © 2012 John Wiley & Sons, Ltd.