Samples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Samples of doped and undoped a-Si: H were deposited at temperatures ranging from 100 degrees C to 350 degrees C and then submitted to different dehydrogenation temperatures (from 350 degrees C to 550 degrees C) and times (from 1 h to 4 h). a-Si: H films were characterised after deposition through the measurements of specific material parameters such as: the optical gap, the conductivity at 25 degrees C, the thermal activation energy of conductivity and its hydrogen content. Hydrogen content was measured after each thermal treatment. Substrate dopant contamination from phosphorus-doped a-Si thin films was evaluated by SIMS after complete dehydrogenation and a junction depth of 0.1 mu m was obtained. Dehydrogenation results show a strong dependence of the hydrogen content of the as-deposited film on the deposition temperature. Nevertheless, the dehydrogenation temperature seems to determine the final H content in a way almost independent from the initial content in the sample. H richer films dehydrogenate faster than films with lower hydrogen concentration. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Building energy management may simultaneously integrate multiple energy areas and sources of information. The coordination of synergies allow better-informed decisions, such as performing forecasts and adjustments of energy production and storage, while adapting electrical loads to off-peak times, when energy rates are lower. This work targets the improvement and optimization of energy management operations in buildings and large complexes, by introducing a conceptual model for supporting real-time advanced reasoning and inference towards efficient energy management.

Transparent electronics is emerging as one of the most promising technologies for the next generation of electronic products, away from the traditional silicon technology. It is essential for touch display panels, solar cells, LEDs and antistatic coatings. The book describes the concept of transparent electronics, passive and active oxide semiconductors, multicomponent dielectrics and their importance for a new era of novel electronic materials and products. This is followed by a short history of transistors, and how oxides have revolutionized this field. It concludes with a glance at low-cost, disposable and lightweight devices for the next generation of ergonomic and functional discrete devices. Chapters cover: Properties and applications of n-type oxide semiconductors P-type conductors and semiconductors, including copper oxide and tin monoxide Low-temperature processed dielectrics n and p-type thin film transistors (TFTs) - structure, physics and brief history Paper electronics - Paper transistors, paper memories and paper batteries Applications of oxide TFTs - transparent circuits, active matrices for displays and biosensors Written by a team of renowned world experts, Transparent Oxide Electronics: From Materials to Devices gives an overview of the world of transparent electronics, and showcases groundbreaking work on paper transistors. © 2012 John Wiley & Sons, Ltd.

A strict upper-bound limit analysis finite element formulation is used to estimate shape factors s_gamma and s_q for determining the bearing capacity of shallow foundations using the classic bearing capacity formula. The finite element formulation uses a quadratic approximation for the velocity field, an extension of a previously published Augmented Lagrangian formulation with a linear velocity field, and was implemented for a parallel processing environment. Results from determining the limit loads under three-dimensional conditions are presented and compared with previously published data. The results obtained allow a strict upper-bound determination of the shape factors. Furthermore, a practical proposal for these factors is made and compared with other proposals made by other authors.

The paper deals with the use of strain-gage based ring-sensors to measure the dynamic forces involved in wind-tunnel testing for research of aeroelastic instabilities. In these experiments, the model has to be supported by an elastic suspension system that allows it to move in response to the flow. The motivation for the work here reported was the assessment of the possibility of occurrence of aeroelastic instabilities in a sectional model of a bridge deck under the action of lateral wind. The model is suspended by helical springs linked to four ring-sensors and aerodynamic drag is measured by two other ring-sensors. The entire measuring system stands outside the wind-tunnel and proved to be practical, low-cost and adaptable to other sectional models. The paper describes the development process and evaluation results of the ring sensors. They feature strain gages arranged in full Wheatstone bridge circuit. The measured time series of force values were translated into lift, pitch moment and drag, as well as linear and angular displacements of the model. High quality results were obtained with the assembly, which allowed obtaining the aerodynamic parameters sought. © 2012 Elsevier B.V.

A facile, simple and environmentally friendly Fe3O4–cysteine MNP was synthesized without any additive or additional source of linkers. Fe3O4–cysteine MNPs were successfully used for the synthesis of b-amino carbonyl and hydroquinoline compounds, which were obtained in excellent yields via multicomponent reactions. Magnetic organocatalysts can be easily recovered by simple magnetic decantation and their catalytic activity remains unaltered after 9 consecutive cycles, making them environmen- tally friendly and widely applicable due to their efficiency, ease of handling, and cost effectiveness.

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A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III–V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P− emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III–V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

Sintered silicon nitride (Si3N4) ceramic substrates were investigated as dielectric substrates for the growth of metal-like boron-doped nanocrystalline diamond (NCD) and microcrystalline diamond coatings via the Hot Filament Chemical Vapor Deposition (HFCVD) technique. The structural, electrical and chemical properties of both the ceramic substrates and the diamond coatings may potentiate their applicability in particular in harsh environments and highly demanding situations. Boron doping was achieved via a boron oxide solution in ethanol dragged into the reaction chamber with argon. The coatings were characterized by scanning elec- tron microscopy, UV $μ$-Raman scattering, X-ray diffraction, time-of-flight secondary ion mass spectroscopy, Brale indentation for adhesion evaluation and two-point contact probe for resistivity measurements. The HFCVD technique led to a maximal growth rate of about 1 $μ$m/h. Several metal-like boron doped diamond coatings were obtained. It was found that at lower substrate temperature, lower system pressure and higher methane concentration, the resistivity of the conducting NCD coatings is about 3 orders of magnitude higher when compared with samples obtained with higher substrate temperature, higher system pressure and lower methane concentration. Nevertheless, for every metal-like boron-doped coating the use of the Si3N4 ceramic substrate guaranteed a superior adhesion level. ©

Human articular cartilage functions under a wide range of mechanical loads in synovial joints, where hydrostatic pressure (HP) is the prevalent actuating force. We hypothesized that the formation of engineered cartilage can be augmented by applying such physiologic stimuli to chondrogenic cells or stem cells, cultured in hydrogels, using custom-designed HP bioreactors. To test this hypothesis, we investigated the effects of distinct HP regimens on cartilage formation in vitro by either human nasal chondrocytes (HNCs) or human adipose stem cells (hASCs) encapsulated in gellan gum (GG) hydrogels. To this end, we varied the frequency of low HP, by applying pulsatile hydrostatic pressure or a steady hydrostatic pressure load to HNC-GG constructs over a period of 3 weeks, and evaluated their effects on cartilage tissue-engineering outcomes. HNCs (10×10 6 cells/mL) were encapsulated in GG hydrogels (1.5{%}) and cultured in a chondrogenic medium under three regimens for 3 weeks: (1) 0.4 MPa Pulsatile HP; (2) 0.4 MPa Steady HP; and (3) Static. Subsequently, we applied the pulsatile regimen to hASC-GG constructs and varied the amplitude of loading, by generating both low (0.4 MPa) and physiologic (5 MPa) HP levels. hASCs (10×10 6 cells/mL) were encapsulated in GG hydrogels (1.5{%}) and cultured in a chondrogenic medium under three regimens for 4 weeks: (1) 0.4 MPa Pulsatile HP; (2) 5 MPa Pulsatile HP; and (3) Static. In the HNC study, the best tissue development was achieved by the pulsatile HP regimen, whereas in the hASC study, greater chondrogenic differentiation and matrix deposition were obtained for physiologic loading, as evidenced by gene expression of aggrecan, collagen type II, and sox-9; metachromatic staining of cartilage extracellular matrix; and immunolocalization of collagens. We thus propose that both HNCs and hASCs detect and respond to physical forces, thus resembling joint loading, by enhancing cartilage tissue development in a frequency- and amplitude-dependant manner. © Copyright 2012, Mary Ann Liebert, Inc.