This paper addresses a modeling and simulation methodology for analog circuit design with amorphous-GIZO thin-film transistors (TFTs). To reach an effective circuit design flow, with commercially available tools, a TFT model has been first developed with an artificial neural network (ANN). Multilayer perceptron with backpropagation algorithm has been adopted to model the static behavior of the TFT devices, for different aspect ratios. The model was then implemented in Verilog-A, to allow a quick instantiation in circuit. Simulations using Cadence Spectre are performed to validate the model. On a second phase, simulation results of basic analog circuits, with this ANN model, are verified against the actual functional results, namely an adder, subtractor, and current mirror circuit. Results demonstrate not only the ANN model accuracy and compatibility with dc and transient analysis, but also show the a-GIZO TFT capability to perform analog operations. © 2012 IEEE.

The aim was to investigate the effect of simulated low-temperature degradation (s-LTD) and hydrothermal fatigue on the degradation of three ZrO2-based dental materials. Lava, IPS, and NanoZr discs were randomly assigned to (1) Control-Storage in distilled water at 37°C; (2) Aging at 134°C for 5 h (s-LTD); (3) Thermocycling in saliva for 30,000 cycles (TF). XRD revealed that ZrO 2 m phase was identified in all groups but TF increased the m phase only for Lava. Under the FESEM, Lava showed no alterations under s-LTD, but displayed corrosion areas up to 60 μm wide after TF. We conclude that TF accelerated the degradation of Lava through an increase in the m phase and grain pull-out from the material surface.

A gene encoding Bfr (bacterioferritin) was identified and isolated from the genome of Desulfovibrio vulgaris cells, and overexpressed in Escherichia coli. In vitro, H2O2 oxidizes Fe2+ ions at much higher reaction rates than O-2. The H2O2 oxidation of two Fe2+ ions was proven by Mossbauer spectroscopy of rapid freeze-quenched samples. On the basis of the Mossbauer parameters of the intermediate species we propose that D. vulgaris Bfr follows a mineralization mechanism similar to the one reported for vertebrate H-type ferritins subunits, in which a diferrous centre at the ferroxidase site is oxidized to diferric intermediate species, that are subsequently translocated into the inner nanocavity. D. vulgaris recombinant Bfr oxidizes and stores up to 600 iron atoms per protein. This Bfr is able to bind DNA and protect it against hydroxyl radical and DNase deleterious effects. The use of H2O2 as an oxidant, combined with the DNA binding and protection activities, seems to indicate a DPS (DNA-binding protein from starved cells)-like role for D. vulgaris Bfr.

This paper suggests an Ecosilient Index to assess the greenness and resilience of automotive companies and the corresponding supply chain. An integrated assessment model is proposed based on green and resilient practices. The Delphi technique is used to obtain the weights of the supply chain paradigms that are the focus of the study and the corresponding practices. The application of the proposed index is then illustrated using a case study approach in the automotive supply chain; in particular the case study is focused in the link supplier/manufacturer. The case study findings confirm the applicability of this index in a real-world supply chain and highlight its managerial implications. The results show that the resilient paradigm is considered to be the one that contributes more to the competitiveness of the automotive supply chain. The green practice identified as the most important to the greenness of this industry is to reduce energy consumption. The significant contributions to resilience are sourcing strategies that allow switching of suppliers, flexible supply base/flexible sourcing and creating total supply chain visibility. The proposed index was developed in the context of automotive sector; this constitutes an initial effort to close the gap between theory and practice. Future research is needed to investigate the index applicability in different industry contexts.

Thin films of (Ta 2O 5) 0.85(TiO 2) 0.15 were deposited on quartz and p-Si substrates by DC reactive magnetron sputtering at different substrate temperatures (T s) in the range 303 - 873 K. The films deposited at 303 0K were in the amorphous and it transformed to crystalline at substrate temperatures ≥ 573 0K. The crystallite size was increased from 50 nm to 72 nm with the increase of substrate temperature. The surface morphology was significantly influenced with the substrate temperature. After deposition of the (Ta 2O 5) 0.85(TiO 2) 0.15 films on Si, aluminium (Al) electrode was deposited to fabricate metal/oxide/semiconductor (MOS) capacitors with a configuration of Al/(Ta 2O 5) 0.85(TiO 2) 0.15/Si. A low leakage current of 7.7 × 10 -5 A/cm 2 was obtained from the films deposited at 303 K. The leakage current was decreased to 9.3 × 10 -8 A/cm 2 with the increase of substrate temperature owing to structural changes. The conduction mechanism of the Al/(Ta 2O 5) 0.85(TiO 2) 0.15/Si capacitors was analyzed and compared with mechanisms of Poole-Frenkel and Schottky emissions. The optical band gap (E g) was decreased from 4.45 eV to 4.38 eV with the increase in substrate temperature. © Published under licence by IOP Publishing Ltd.