{An upgraded TOF-SIMS VG Ionex IX23LS : Study on the negative secondary ion emission of III – V compound semiconductors with prior neutral cesium deposition}

Citation:
Ghumman, C. A. A., A. M. C. Moutinho, A. Santos, O. M. N. D. Teodoro, and A. Tolstogouzov. "{An upgraded TOF-SIMS VG Ionex IX23LS : Study on the negative secondary ion emission of III – V compound semiconductors with prior neutral cesium deposition}." Applied Surface Science. 258 (2012): 2490-2497.

Abstract:

A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III–V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P− emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III–V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.

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