Abstract The strain rate dependent mechanical behaviour was studied for the common out-of-autoclave aerospace textile composite 5-harness-satin carbon–epoxy. End-loaded 15 ° , 30 ° and 45 ° off-axis and 90 ° compression tests were carried out at three different strain rate levels ( 4 × 10 - 4 s - 1 , 200 s - 1 and 1000 s - 1 ) to determine the effect of strain rate for transverse compression and combined transverse compression/in-plane shear loading. The dynamic tests were carried out on a split-Hopkinson pressure bar, where high speed photography and digital image correlation allowed a detailed study of the specimen deformation and failure process. Quasi-static reference tests were carried out on an electro-mechanical test machine using the same specimen type and a static \{DIC\} system. Pronounced strain rate effects on the axial stress–strain response were observed for all specimen types. Failure envelopes for the combined σ 22 c - τ 12 stress state were derived from the experimental data and compared with the maximum stress criterion, which appears well suited to approximate the experimental failure envelope at all strain rate levels. It was observed that the failure envelope was simply scaled up with increasing strain rate, while the overall shape was found to be strain rate independent.

Transparent electronics has gained special attention during the last few years and is today established as one of the most promising technologies for leading the next generation of flat panel display due to its excellent electronic performance. The key components are wide band gap semiconductors, where oxides of different origin play an important role, not only as passive component but also as active component, similar to what we observe in conventional semiconductors like silicon. In this paper we present the recent progress in n- and p-type oxide based thin film transistors (TFT) produced by rf magnetron sputtering and we will summarize the major milestones already achieved with this emerging and very promising technology. © 2015 IEEE.

The formulation of a bending vibration problem of an elastically restrained Bernoulli-Euler beam carrying a finite number of concentrated elements along its length is presented. In this study, the authors exploit the application of the differential evolution optimization technique to identify the torsional stiffness properties of the elastic supports of a Bernoulli-Euler beam. This hybrid strategy allows the determination of the natural frequencies and mode shapes of continuous beams, taking into account the effect of attached concentrated masses and rotational inertias, followed by a reconciliation step between the theoretical model results and the experimental ones. The proposed optimal identification of the elastic support parameters is computationally demanding if the exact eigenproblem solving is considered. Hence, the use of a Gaussian process regression as a meta-model is addressed. An experimental application is used in order to assess the accuracy of the estimated parameters throughout the comparison of the experimentally obtained natural frequency, from impact tests, and the correspondent computed eigenfrequency.

Nucleation is a critical step determining the outcome of the entire crystallization process. Finding an effective nucleant for protein crystallization is of utmost importance for structural biology. The latter relies on good-quality crystals to solve the three-dimensional structures of macromolecules. In this study we show that crystalline barium sulfate (BaSO4) with an etched and/or ionic liquid (IL)-functionalized surface (1) can induce protein nucleation at concentrations well below the concentration needed to promote crystal growth under control conditions, (2) can shorten the nucleation time, (3) can increase the growth rate, and finally (4) may help to improve the protein crystal morphology. These effects were shown for lysozyme, RNase A, trypsin, proteinase K, myoglobin, and hemoglobin. Therefore, the use of BaSO4 particles enables us to reduce the amount of protein in crystallization trials and increases the chance of obtaining protein crystals of the desired quality. In the context of the underlying mechanism, it is shown that the protein-solid contact formation is governed by the interaction of the polar compartments of the biomacromolecule with the support. The tendency of a protein to concentrate near the solid surface is enhanced by both the hydrophobicity of the protein and that of the surface (tuned by the functionalizing IL). These mechanisms of interaction of biomacromolecules with inorganic hydrophilic solids correspond to the principles of amphiphilic IL-mineral interactions.

Este artículo describe una actividad de robótica educativa llevada a cabo en una escuela en Hortolandia, São Paulo, Brasil, como parte de un taller de capacitación docente sobre robótica educativa en contexto inclusivo. Los participantes

Here, a simple, nontoxic, and inexpensive "water-inducement" technique for the fabrication of oxide thin films at low annealing temperatures is reported. For water-induced (WI) precursor solution, the solvent is composed of water without additional organic additives and catalysts. The thermogravimetric analysis indicates that the annealing temperature can be lowered by prolonging the annealing time. A systematic study is carried out to reveal the annealing condition dependence on the performance of the thin-film transistors (TFTs). The WI indium-zinc oxide (IZO) TFT integrated on SiO2 dielectric, annealed at 300 °C for 2 h, exhibits a saturation mobility of 3.35 cm2 V-1 s-1 and an on-to-off current ratio of ≈108. Interestingly, through prolonging the annealing time to 4 h, the electrical parameters of IZO TFTs annealed at 230 °C are comparable with the TFTs annealed at 300 °C. Finally, fully WI IZO TFT based on YOx dielectric is integrated and investigated. This TFT device can be regarded as "green electronics" in a true sense, because no organic-related additives are used during the whole device fabrication process. The as-fabricated IZO/YOx TFT exhibits excellent electron transport characteristics with low operating voltage (≈1.5 V), small subthreshold swing voltage of 65 mV dec-1 and the mobility in excess of 25 cm2 V-1 s-1. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10

Transparent metal oxides thin films are a class of inorganic conductors and semiconductors with significant importance for use in portable electronics, displays, flexible electronics, multi-functional windows and solar cells. Due to the recent development of transparent and flexible electronics, there is a growing interest in depositing metal-oxide thin-film on plastic substrates that can offer flexibility, lighter weight, and potentially lead to cheaper manufacturing by allowing printing and rollto- roll processing. The plastic substrates, however, limit device processing to below 200oC. In this context, the deposition of high-performance semiconductor thin films from dispersions of pre-prepared oxide nanoparticles at temperatures below 200oC represents a potential key route. This paper reports on the preparation of ZnO transparent thin films using solutionprocessed nanoparticles (NPs) precipitated from zinc acetate alcoholic solution with potassium hydroxide. The nanoparticles size distribution, microstructure and crystallinity were measured by dynamic light scattering (DLS), Fourier transform infrared spectroscopy (FTIR) and X-ray diffraction (XRD). The thin films were deposited by spin-coating onto soda lima glass substrate, using a dispersion of 1wt% ZnO NPs. The morphology of the films annealed at 120 and 180oC, observed by atomic force microscopy and cross-section scanning electron microscopy, shows columnar grains with diameter ranging between 20 and 70 nm, depending on the conditions of depositions. Optical measurements indicated high transparency, between 85 and 94 %, in the visible range, a direct nature of band-to-band transitions and band gap values between 3,22 and 3,32 eV. The refractive index and extinction coefficient have been calculated from optical transmittance and reflectance spectra.

The p/i interface plays a major role in the conversion efficiency of nanocrystalline silicon (nc-Si:H) solar cells. Under plasma-enhanced chemical vapor deposition (PECVD) of the intrinsic (i) nc-Si:H layer, ion bombardment can severely affect the underlying p-doped layer and degrade the solar cell performance. The core of the present work is to investigate the effect of light and heavy ion bombardment on the structural modifications of the p-layer during the p/i interface formation. The properties of the nc-Si:H materials deposited under distinct conditions are analyzed and correlated to the deposition rate and the resulting cell efficiency. To recreate the ion bombardment during the initial stages of the i-layer deposition on the p-layer, hydrogen plasma treatment was performed for 30 s (light ion bombardment), after which a flux of silane was introduced into the deposition chamber in order to initiate the heavy ion bombardment and growth of an ultra-thin (5 nm) i-layer. The structural changes of the p-type nc-Si:H layers were observed by spectroscopic ellipsometry. The obtained results confirm that detrimental structural modifications (e.g. partial amorphization of the sub-surface region and bulk) occur in the p-layer, caused by the ion bombardment. To minimize this effect, a protective buffer layer is investigated able to improve the performance of the solar cells fabricated under increased growth rate conditions. © 2015 Elsevier B.V. All rights reserved.