The paper presents the properties of zinc oxide thin films deposited on glass substrate via dip-coating technique. Zinc acetate dehydrate, ethanol and monoethanol amine were used as starting materials and N2 gas was used as thermal annealing atmosphere for film crystallization. The effect of withdrawal speed on the crystalline structure, morphology, zinc and nitrogen chemical states, optical, electrical and gas-sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and photoreduction-ozone reoxidation data. © 2007 Elsevier B.V. All rights reserved.

Thin film transistors (TFTs) have been produced by rf magnetron sputtering at room temperature, using non conventional oxide materials like amorphous indium-zinc-oxide (IZO) semiconductor, for the channel as well as for the drain and source regions. The obtained TFTs operate in the enhancement mode with threshold voltages of 2.4 V, saturation mobility of 22.7 cm2/Vs, gate voltage swing of 0.44 V/dec and an ON/OFF current ratio of 7×10 7. The high performances presented by these TFTs associated to a high electron mobility, at least two orders of magnitude higher than that of conventional amorphous silicon TFTs and a low threshold voltage, opens new doors for applications in flexible, wearable, disposable portable electronics as well as battery-powered applications.

Various metal oxide-silica nanocomposite films have been recently proposed as gas-sensitive materials. This paper presents results on cobalt oxide-SiO2 mesoporous nanocomposite thin films templated by a cationic surfactant. The films were deposited on glass substrate by dip-coating process, using [Co(CH3COO)2]·4H2O and tetraethoxysilane (TEOS) as starting materials. The effect of withdrawal speed, number of layers and thermal treatment on the crystalline structure, morphology, Co-doping states, optical, electrical and gas sensing properties of the thin films has been investigated using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, optical transmittance and room temperature photoreduction-oxidation data. © 2007 Elsevier B.V. All rights reserved.

This paper reports on a method and a test setup developed to measure the transient dark current and the spectral response characteristics of a-Si:H MIS photosensors. Using this method the segmented-gate/SiNx/a Si:H/n +/ITO structures have been characterized under different biasing conditions. The dependences of the dark and light signals on the refresh pulse amplitude, offset voltage and pulse width were measured and analyzed. It is found that the amplitude of the time-dependent component of the leakage current associated with charge trapping at the insulator-semiconductor interface can be significantly reduced by adjusting the offset voltage. The observed bias dependence of the spectral response characteristics is explained by analyzing the charge carrier transport in the absorption layer at different wavelengths of the incident light. © 2008 WILEY-VCH Verlag GmbH & Co. KGaA.