The society has organized itself towards facing existing social needs like the care for children with Down syndrome, Deafness or Autism Spectrum Disorders, among several other pathologies. As a result, several organizations emerged towards handling these issues, composed of doctors, therapists, psychologists, among other professionals, but excluding technology experts. On the other hand side, the finalist students from technology universities usually have a final course where they have to create a complete project from scratch. This article proposes a method for applying the effort and enthusiasm of such students in the above mentioned social causes through games’ development.

O advento da fotografia digital está na base de uma clara mudança de paradigma no processo de gestão da fotografia por amadores. Porque tirar mais uma fotografia agora não representa qualquer custo adicional, é frequente tirarem-se múltiplas fotografias ao mesmo sujeito, na expectativa de que uma delas corresponda aos padrões de qualidade desejados, em termos de iluminação, foco e enquadramento. Assumindo que a questão do enquadramento se resolve facilmente recorrendo ao recorte (crop) da fotografia, tem-se ainda assim que selecionar qual das várias fotografias bem enquadradas, tecnicamente parecidas em termos de iluminação e foco, vamos guardar (e por oposição quais vamos descartar). A escolha da melhor fotografia com base na observação visual em ecrã de computador é um processo muito pouco preciso e, portanto, gerador de sensações de insegurança que resultam, muitas vezes, na opção de não descartar nenhuma das várias fotografias semelhantes. Neste artigo propomo-nos endereçar a questão de como ajudar um fotógrafo amador a selecionar a melhor fotografia de um conjunto de fotografias semelhantes em termos técnicos (foco e iluminação) e de enquadramento. Este processo é baseado num workflow suportado por um pacote de software, que com alguma ajuda do utilizador permite ordenar um conjunto de fotografias semelhantes, sendo assim possível escolher aquela que melhor corresponde às expectativas e dando segurança e conforto na eventual eliminação das restantes.

A sociedade organizou-se para fazer frente a necessidades como o tratamento e acompanhamento de crianças ou jovens com Síndrome de Down, Surdez, Autismo, entre outras patologias. Como resultado, surgiram distintas organizações com o objetivo de lidar com estes casos, compostas por médicos, terapeutas, psicólogos, sociólogos e outros profissionais, mas excluindo profissionais dedicados ao desenvolvimento de novas tecnologias. Por outro lado, alunos finalistas de cursos tecnológicos desenvolvem normalmente um projeto tecnológico do início na disciplina final dos seus cursos - Projeto/Dissertação de fim de curso. Este artigo propõe um método para aplicar o esforço e entusiasmo de tais alunos às causas sociais mencionadas através do desenvolvimento de Jogos.

In this study, we report solution-processed amorphous zinc tin oxide transistors exhibiting high operational stability under positive gate bias stress, translated by a recoverable threshold voltage shift of about 20{%} of total applied stress voltage. Under vacuum condition, the threshold voltage shift saturates showing that the gate-bias stress is limited by trap exhaustion or balance between trap filling and emptying mechanism. In ambient atmosphere, the threshold voltage shift no longer saturates, stability is degraded and the recovering process is impeded. We suggest that the trapping time during the stress and detrapping time in recovering are affected by oxygen adsorption/desorption processes. The time constants extracted from stretched exponential fitting curves are ≈106 s and 105 s in vacuum and air, respectively.

Aluminum Zinc Oxide has been extensively investigated as a cheap alternative to transparent conducting tin oxide films for electronic and optoelectronic applications. Thin films of Aluminum Zinc Oxide have been developed successfully through a combination of solution combustion synthesis and solution synthesis. Zn(NO3)3·6H2O as metal source was dissolved in 2-methoxyethanol as solvent through combustion synthesis with Urea as fuel while dopant source of AlCl3·6H2O was mixed separately in solvent to avoid aluminum oxide formation in the films. Precursor solutions were obtained mixing Zn {&} Al separate solutions in 9:1, 8:2, and 7:3 ratios respectively with oxide, fuel and dopant concentrations of 0.5, 0.25, 0.1, and 0.05 M. The film stacks have been prepared through spin-coating with heating at 400°C for 10 minutes after each deposition to remove residuals and evaporate solvents. Thermal annealing in oven at 600°C for 1 hour followed by rapid thermal annealing at 500°C {&} 600°C first in vacuum and then in N2-5{%}H2 environment respectively for 10 minutes each reduced the resistivity of film stacks. Film stack with 10 layers for an average thickness of 0.5$μ$m gave the best Hall Effect resistivity of 3.2 × 10-2 $Ømega$-cm in the case of 0.5M solution with Zn:Al mixing ratio of 9:1 for RTA annealings at 600°C with an average total transparency of 80 {%} in the wavelength range of 400-1200 nm. The results show a clear trend that increasing the amount of ingredients resistivity could further be decreased.

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 10(6), threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm(2)/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping.

Here we present for the first time a TiO2/Cu2O all-oxide heterojunction solar cell entirely produced by spray pyrolysis onto fluorine doped tin oxide (FTO) covered glass substrates, using silver as a back contact. A combinatorial approach was chosen to investigate the impact of the TiO2 window layer and the Cu2O light absorber thicknesses. We observe an open circuit voltage up to 350 mV and a short circuit current density which is strongly dependent of the Cu2O thickness, reaching a maximum of {\~{}}0.4 mA/cm2. Optical investigation reveals that a thickness of 300 nm spray pyrolysis deposited Cu2O is sufficient to absorb most photons with an energy above the symmetry allowed optical transition of 2.5 eV, indicating that the low current densities are caused by strong recombination in the absorber that consists of small Cu2O grains.

Nuclear Inst. and Methods in Physics Research, B, 365 (2015) 457-461. doi:10.1016/j.nimb.2015.07.006