Pedro Barquinha

Fortunato, E., P. Barquinha, A. Pimentel, L. Pereira, G. GONCALVES, and R. Martins. "Amorphous IZO TTFTs with saturation mobilities exceeding 100 cm(2)/Vs." Physica Status Solidi-Rapid Research Letters. 1 (2007): R34-R36. AbstractWebsite

Martins, R., P. Barquinha, I. Ferreira, L. Pereira, G. GONCALVES, and E. Fortunato. "Role of order and disorder on the electronic performances of oxide semiconductor thin film transistors." Journal of Applied Physics. 101 (2007). AbstractWebsite

Fortunato, Elvira, Pedro Barquinha, Luis Pereira, Gongalo Goncalves, and Rodrigo Martins Advanced materials for the next generation of thin film transistors. Eds. C. H. Chen, and Y. S. Tsai. Idmc'07: Proceedings of the International Display Manufacturing Conference 2007., 2007. AbstractWebsite

Barquinha, P., A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato. "Effect of UV and visible light radiation on the electrical performances of transparent TFTs based on amorphous indium zinc oxide." Journal of Non-Crystalline Solids. 352 (2006): 1756-1760. AbstractWebsite

Martins, R., P. Almeida, P. Barquinha, L. Pereira, A. Pimentel, I. Ferreira, and E. Fortunato. "Electron transport and optical characteristics in amorphous indium zinc oxide films." Journal of Non-Crystalline Solids. 352 (2006): 1471-1474. AbstractWebsite

Pereira, L., L. Raniero, P. Barquinha, E. Fortunato, and R. Martins. "Impedance study of the electrical properties of poly-Si thin film transistors." Journal of Non-Crystalline Solids. 352 (2006): 1737-1740. AbstractWebsite

Barquinha, P., A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato. "Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide." Journal of Non-Crystalline Solids. 352 (2006): 1749-1752. AbstractWebsite

Barquinha, P., E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins. "Influence of time, light and temperature on the electrical properties of zinc oxide TFTs." Superlattices and Microstructures. 39 (2006): 319-327. AbstractWebsite

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Low temperature processed hafnium oxide: Structural and electrical properties." Materials Science in Semiconductor Processing. 9 (2006): 1125-1132. AbstractWebsite

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Electrical performances of low temperature annealed hafnium oxide deposited at room temperature." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 58-62. Abstract

Fortunato, E., P. Barquinha, L. Pereira, G. GONCALVES, R. Martins, and Soc Korean Information Display. "Multicomponent wide band gap oxide semiconductors for thin film transistors." Imid/Idmc 2006: The 6th International Meeting on Information Display/the 5th International Display Manufacturing Conference, Digest of Technical Papers. Proceedings of International Meeting on Information Display. 2006. 605-608. Abstract

Fortunato, E., A. Goncalves, A. Marques, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, L. Raniero, G. GONCALVES, I. Ferreira, and R. Martins. "Multifunctional thin film zinc oxide semiconductors: Application to electronic devices." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 3-7. Abstract

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Poly-Si thin film transistors: Effect of metal thickness on silicon crystallization." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 28-32. Abstract

Barquinha, P., E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins. "A study on the electrical properties of ZnO based transparent TFTs." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 68-72. Abstract

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors." Thin Solid Films. 487 (2005): 102-106. AbstractWebsite

Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins. "Recent advances in ZnO transparent thin film transistors." Thin Solid Films. 487 (2005): 205-211. AbstractWebsite

Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "Fully transparent ZnO thin-film transistor produced at room temperature." Advanced Materials. 17 (2005): 590-+. AbstractWebsite

Martins, R., P. Barquinha, A. Pimentel, L. Pereira, and E. Fortunato. "Transport in high mobility amorphous wide band gap indium zinc oxide films." Physica Status Solidi a-Applications and Materials Science. 202 (2005): R95-R97. AbstractWebsite

Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide." Materials Science and Engineering B-Solid State Materials for Advanced Technology. 118 (2005): 210-213. AbstractWebsite

Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins Zinc oxide thin-film transistors. Eds. N. H. Nickel, and E. Terukov. Vol. 194. Zinc Oxide - A Material for Micro- and Optoelectronic Applications, 194., 2005. AbstractWebsite

Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira. "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature." Applied Physics Letters. 85 (2004): 2541-2543. AbstractWebsite

Barquinha, P., L. Pereira, H. Aguas, E. Fortunato, and R. Martins. "Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite

Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "Next generation of thin film transistors based on zinc oxide." Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352. Abstract