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Lorenz, M., A. Lajn, H. Frenzel, H. V. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato. "Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films." Applied Physics Letters. 97 (2010). AbstractWebsite
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "Gate-bias stress in amorphous oxide semiconductors thin-film transistors." Applied Physics Letters. 95 (2009). AbstractWebsite
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Lajn, Alexander, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins. "Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films." Journal of Applied Physics. 113 (2013). AbstractWebsite
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