Pedro Barquinha

Materials Science Department, I3N|CENIMAT

pmcb@fct.unl.pt (email)

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Gate-bias stress in amorphous oxide semiconductors thin-film transistors

Citation:
Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "Gate-bias stress in amorphous oxide semiconductors thin-film transistors." Applied Physics Letters. 95 (2009).
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Abstract:

n/a

Notes:

Times Cited: 91

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