Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films | Pedro Barquinha

Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films

Citation:: Lorenz, M., A. Lajn, H. Frenzel, H. V. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato. "Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films." Applied Physics Letters. 97 (2010).

Abstract:

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Times Cited: 16

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