Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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Lajn, Alexander, Holger von Wenckstern, Marius Grundmann, Gerald Wagner, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins.
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Comparative study of transparent rectifying contacts on semiconducting oxide single crystals and amorphous thin films
."
Journal of Applied Physics
. 113 (2013).
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Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira.
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Gate-bias stress in amorphous oxide semiconductors thin-film transistors
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Applied Physics Letters
. 95 (2009).
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Lorenz, M., A. Lajn, H. Frenzel, H. V. Wenckstern, M. Grundmann, P. Barquinha, R. Martins, and E. Fortunato.
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Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films
."
Applied Physics Letters
. 97 (2010).
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more