Publications

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Submitted
Zanarini, Simone, Nadia Garino, Jijeesh Ravi Nair, Carlotta Francia, Pawel Jerzy Wojcik, Luis Pereira, Elvira Fortunato, Rodrigo Martins, Silvia Bodoardo, and Nerino Penazzi. "{Contrast Enhancement in Polymeric Electrochromic Devices Encompassing Room Temperature Ionic Liquids}." {INTERNATIONAL JOURNAL OF ELECTROCHEMICAL SCIENCE}. {9} (Submitted): {1650-1662}. Abstract

{We report the preparation and spectro-electrochemical characterization of electrochromic devices (ECD) combining inkjet-printed WO3 as cathode and electro-deposited V2O5 as anode. ECD were prepared for the first time with an optimized formulation of gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol) methyl ether methacrylate (BEMA/PEGMA) encompassing the Room Temperature Ionic Liquid (RTIL, 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) as solvent. The UV-VIS spectrum of ECD was recorded at different potentials during Li+ insertion and de-insertion; additionally the Percent Trasmittance (T%) of ECD vs. time was investigated during repeated bleaching and coloring cycles allowing thus the estimation of switching times and device stability. Due to the lower ionic conductivity and the apparent superior solvent permeability within WO3 active layer, RTIL containing ECD showed slower switching times, but higher contrast with respect to the similar ones with EC/DEC as solvent. These results indicate that the ECD containing environment-friendly RTIL electrolytes are suitable for applications requiring high contrast, high safety and moderately fast switching times.}

Schmeisser, Dieter, Joerg Haeberle, Pedro Barquinha, Diana Gaspar, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electronic structure of amorphous ZnO films}." {PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10}. Eds. M. {Godlewski, and A. } Zakrzewski. Vol. {11}. {Physica Status Solidi C-Current Topics in Solid State Physics}, {11}. Submitted. {1476-1480}. Abstract

{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}

2006
Zhang, S., L. Pereira, Z. Hu, L. Ranieiro, E. Fortonato, I. Ferreira, and R. Martins. "{Characterization of nanocrystalline silicon carbide films}." Journal of Non-Crystalline Solids. 352 (2006): 1410-1415. AbstractWebsite
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2005
Zhang, S, Raniero, L, Fortunato, and E. "{Amorphous silicon based p-i-i-n structure for color sensor}." 862 (2005): 679-683. AbstractWebsite
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2004
Zhang, S., L. Raniero, E. Fortunato, L. Pereira, N. Martins, P. Canhola, I. Ferreira, N. Nedev, H. Águas, and R. Martins. "{Characterization of silicon carbide thin films prepared by VHF-PECVD technology}." Journal of Non-Crystalline Solids. 338-340 (2004): 530-533. AbstractWebsite
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