Publications

Export 82 results:
Sort by: Author Title Type [ Year (Desc)]
2009
Martins, R., Luisa Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. GONCALVES, A. Goncalves, and E. Fortunato. "{Zinc oxide and related compounds: order within the disorder}." Eds. Ferechteh H. Teherani, Cole W. Litton, and David J. Rogers. Vol. 7217. 2009. 72170B–13. Abstract
n/a
Lopes, M. E., H. L. Gomes, M. C. R. Medeiros, P. Barquinha, L. Pereira, E. Fortunato, R. Martins, and I. Ferreira. "{Gate-bias stress in amorphous oxide semiconductors thin-film transistors}." Applied Physics Letters. 95 (2009): 063502. AbstractWebsite
n/a
Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, D. Kuščer, M. Kosec, and E. Fortunato. "{Performance and Stability of Low Temperature Transparent Thin-Film Transistors Using Amorphous Multicomponent Dielectrics}." Journal of The Electrochemical Society. 156 (2009): H824. AbstractWebsite
n/a
Pei, Z. L., L. Pereira, G. Gonçalves, P. Barquinha, N. Franco, E. Alves, A. M. B. Rego, R. Martins, and E. Fortunato. "{Room-Temperature Cosputtered HfO[sub 2]–Al[sub 2]O[sub 3] Multicomponent Gate Dielectrics}." Electrochemical and Solid-State Letters. 12 (2009): G65. AbstractWebsite
n/a
Martins, Rodrigo, P. Barquinha, L. Pereira, N. Correia, G. Gonçalves, I. Ferreira, and E. Fortunato. "{Selective floating gate non-volatile paper memory transistor}." physica status solidi (RRL) - Rapid Research Letters. 3 (2009): 308-310. AbstractWebsite
n/a
Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{Toward High-Performance Amorphous GIZO TFTs}." Journal of The Electrochemical Society. 156 (2009): H161. AbstractWebsite
n/a
2008
Fortunato, Elvira, Nuno Correia, Pedro Barquinha, LuÍs Pereira, Gon\c{C}alo Goncalves, and Rodrigo Martins. "{High-Performance Flexible Hybrid Field-Effect Transistors Based on Cellulose Fiber Paper}." IEEE Electron Device Letters. 29 (2008): 988-990. AbstractWebsite
n/a
Fortunato, E., P. Barquinha, G. Gonçalves, L. Pereira, and R. Martins. "{High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors}." Solid-State Electronics. 52 (2008): 443-448. AbstractWebsite
n/a
Martins, R., P. Barquinha, A. Pimentel, L. Pereira, E. Fortunato, D. Kang, I. Song, C. Kim, J. Park, and Y. Park. "{Electron transport in single and multicomponent n-type oxide semiconductors}." Thin Solid Films. 516 (2008): 1322-1325. AbstractWebsite
n/a
Pereira, L., P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, and Y. Park. "{High k dielectrics for low temperature electronics}." Thin Solid Films. 516 (2008): 1544-1548. AbstractWebsite
n/a
Martins, R. M. S., N. Schell, A. Mücklich, H. Reuther, M. Beckers, R. J. C. Silva, L. Pereira, and F. M. {Braz Fernandes}. "{Study of graded Ni-Ti shape memory alloy film growth on Si(100) substrate}." Applied Physics A. 91 (2008): 291-299. AbstractWebsite
n/a
Fortunato, E., L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. GONCALVES, and I. Ferreira. "{Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications}." Solar Energy Materials and Solar Cells. 92 (2008): 1605-1610. AbstractWebsite
n/a
Figueiredo, V., E. Elangovan, G. Gonçalves, P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato. "{Effect of post-annealing on the properties of copper oxide thin films obtained from the oxidation of evaporated metallic copper}." Applied Surface Science. 254 (2008): 3949-3954. AbstractWebsite
n/a
Barquinha, Pedro, Anna M. Vila, Gon\c{C}alo Gon\c{C}alves, LuÍs Pereira, Rodrigo Martins, Joan R. Morante, and Elvira Fortunato. "{Gallium–Indium–Zinc-Oxide-Based Thin-Film Transistors: Influence of the Source/Drain Material}." IEEE Transactions on Electron Devices. 55 (2008): 954-960. AbstractWebsite
n/a
Fortunato, Elvira M. C., Luís M. N. Pereira, Pedro M. C. Barquinha, Ana M. {Botelho do Rego}, Gonçalo Gonçalves, Anna Vilà, Juan R. Morante, and Rodrigo F. P. Martins. "{High mobility indium free amorphous oxide thin film transistors}." Applied Physics Letters. 92 (2008): 222103. AbstractWebsite
n/a
Pereira, L., Barquinha, P., Fortunato, and E. "{Low temperature high k dielectric on poly-Si TFTs}." 354 (2008): 2534-2537. AbstractWebsite
n/a
Pereira, L., H. Águas, M. Beckers, R. M. S. Martins, E. Fortunato, and R. Martins. "{Metal contamination detection in nickel induced crystallized silicon by spectroscopic ellipsometry}." Journal of Non-Crystalline Solids. 354 (2008): 2319-2323. AbstractWebsite
n/a
Fortunato, Elvira, Barquinha, Pedro, Goncalves, and Goncalo. "{New Amorphous Oxide Semiconductor for Thin Film Transistors (TFTs)}." 587-588 (2008): 348-352. AbstractWebsite
n/a
Barquinha, P., L. Pereira, G. Gonçalves, R. Martins, and E. Fortunato. "{The Effect of Deposition Conditions and Annealing on the Performance of High-Mobility GIZO TFTs}." Electrochemical and Solid-State Letters. 11 (2008): H248. AbstractWebsite
n/a
Barquinha, P., A. Vilà, G. Gonçalves, L. Pereira, R. Martins, J. Morante, and E. Fortunato. "{The role of source and drain material in the performance of GIZO based thin-film transistors}." physica status solidi (a). 205 (2008): 1905-1909. AbstractWebsite
n/a
Martins, Rodrigo, Pedro Barquinha, Luís Pereira, Nuno Correia, Gonçalo Gonçalves, Isabel Ferreira, and Elvira Fortunato. "{Write-erase and read paper memory transistor}." Applied Physics Letters. 93 (2008): 203501. AbstractWebsite
n/a
2007
Barquinha, P., G. Gonçalves, L. Pereira, R. Martins, and E. Fortunato. "{Effect of annealing temperature on the properties of IZO films and IZO based transparent TFTs}." Thin Solid Films. 515 (2007): 8450-8454. AbstractWebsite
n/a
Gonçalves, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato. "{Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films}." Thin Solid Films. 515 (2007): 8562-8566. AbstractWebsite
n/a
Martins, R., P. Barquinha, L. Pereira, I. Ferreira, and E. Fortunato. "{Role of order and disorder in covalent semiconductors and ionic oxides used to produce thin film transistors}." Applied Physics A. 89 (2007): 37-42. AbstractWebsite
n/a
Fortunato, Elvira, Barquinha, Pedro, Pereira, and Luis. "{Advanced materials for the next generation of thin film transistors}." (2007): 371-373. AbstractWebsite
n/a