Stanimir Valtchev

Power Hardware-in-the-Loop (PHiL) system for electric drives application based on power converter with Field Programmable Gate Array (FPGA) -based control system which realizes in real time model of converter, motor and mechanism is discussed. Two PHiL structures are under consideration. Difference between both of them is shown. Test results obtained in the PHiLs with Converter Under Test (CUT) control system are presented in the paper. Proposed PHIL is intended for converters testing and for their operating modes studying. The PHIL repeats electric drive instantaneous current and angular velocity.

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The improved characteristics of Tunnel FETs (TFETs) like steep sub-threshold swing and low off-currents make them an attractive choice for low power operations compared to MOSFETs and Multi-gate FETs like FINFETs. Such characteristics are favorable to digital design, but the drain current saturation in their output characteristics can also benefit the analog design. In this paper, it is shown by simulations that analog characteristics as voltage gain, power consumption and bandwidth are improved using TFETs compared to their counterparts, at a sub-22 nm technology node and 0.8 V supply voltage.

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Nesta dissertação apresenta-se um motor em disco polifásico inovador bem como uma estratégia de controlo com base no método de variação de velocidade por comutação do número de pares de pólos. A configuração das bobinas aliada à escolha das correntes e tensões que se injectam nas bobinas dos estatores, permite comutar electronicamente o número de pólos do motor entre 2, 4 6 e 8 pólos, conseguindo-se controlar a característica binário?velocidade do motor. O motor em disco possui a bobinagem feita em cobre com dois semi-estatores, em que quando utiliza o rotor em alumínio (com condutividade diferente de zero) comporta-se como um motor de indução convencional. Quando se substitui o rotor em alumínio por um constituído por um supercondutor de alta temperatura (SAT), o dispositivo comporta-se como um motor de histerese. O princípio de funcionamento do motor em disco convencional é baseado na indução de força electromotrizes no rotor e, consequentemente, uma vez que o alumínio é bom condutor eléctrico, correntes eléctricas induzidas, originadas por haver um campo magnético variável que é criado pelos semi-estatores. O comportamento deste tipo de motores, no que diz respeito a principais características (como o binário?velocidade para os diferentes números de pares de pólos), circuito equivalente de Steinmetz, entre outras teorias associadas é já conhecido há bastante tempo. O princípio de funcionamento do motor SAT é diferente do apresentado anteriormente, funciona com base na dinâmica de vórtices e devido ao facto de aparecer o fenómeno de ancoragem de fluxo (flux pinning) nos supercondutores de alta temperatura. Como o campo magnético varia, então o disco roda. Este motor tem um princípio de funcionamento muito mais complexo que o motor de indução sendo a obtenção do modelo do motor SAT complicada. A obtenção do modelo do motor SAT não é abordado nesta dissertação. Os comportamentos e modos de operação do motor com disco de alumínio e em materiais SAT são simulados através de um programa comercial de elementos finitos, nesta dissertação, sendo a supercondutividade simulada com base na relação entre o campo eléctrico e a densidade de corrente pela lei da potenciação (E-J power law). Com as simulações pretende-se comparar o rendimento electromecânico de ambos os motores.

Power electronics (PE) plays a major role in electrical devices and systems, namely in electromechanical drives, in motor and generator controllers, and in power grids, including high-voltage DC (HVDC) power transmission. PE is also used in devices for the protection against grid disturbances, like voltage sags or power breakdowns. To cope with these disturbances, back-up energy storage devices are used, like uninterruptible power supplies (UPS) and flywheels. Some of these devices may use superconductivity. Commercial PE semiconductor devices (power diodes, power MOSFETs, IGBTs, power Darlington transistors and others) are rarely (or never) experimented for cryogenic temperatures, even when designed for military applications. This means that its integration with HTS power devices is usually done in the hot environment, raising several implementation restrictions. These reasons led to the natural desire of characterising PE under extreme conditions, e. g. at liquid nitrogen temperatures, for use in HTS devices. Some researchers expect that cryogenic temperatures may increase power electronics' performance when compared with room-temperature operation, namely reducing conduction losses and switching time. Also the overall system efficiency may increase due to improved properties of semiconductor materials at low temperatures, reduced losses, and removal of dissipation elements. In this work, steady state operation of commercial PE semiconductors and devices were investigated at liquid nitrogen and room temperatures. Performances in cryogenic and room temperatures are compared. Results help to decide which environment is to be used for different power HTS applications.

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Power electronics (PE) plays a major role in electrical devices and systems, namely in electromechanical drives, in motor and generator controllers, and in power grids, including high-voltage DC (HVDC) power transmission. PE is also used in devices for the protection against grid disturbances, like voltage sags or power breakdowns. To cope with these disturbances, back-up energy storage devices are used, like uninterruptible power supplies (UPS) and flywheels. Some of these devices may use superconductivity. Commercial PE semiconductor devices (power diodes, power MOSFETs, IGBTs, power Darlington transistors and others) are rarely (or never) experimented for cryogenic temperatures, even when designed for military applications. This means that its integration with HTS power devices is usually done in the hot environment, raising several implementation restrictions. These reasons led to the natural desire of characterising PE under extreme conditions, e. g. at liquid nitrogen temperatures, for use in HTS devices. Some researchers expect that cryogenic temperatures may increase power electronics' performance when compared with room-temperature operation, namely reducing conduction losses and switching time. Also the overall system efficiency may increase due to improved properties of semiconductor materials at low temperatures, reduced losses, and removal of dissipation elements. In this work, steady state operation of commercial PE semiconductors and devices were investigated at liquid nitrogen and room temperatures. Performances in cryogenic and room temperatures are compared. Results help to decide which environment is to be used for different power HTS applications

International project (1251?78 and 1252?78) in which the Technical University of Sofia (S.Valtchev, N.Stefanov) has sucessfully acomplished the task of constructing and implementing in production a high precision (0.01% regulation) power supply for a cirurgical laser tool (1977-1980). The construction involved a vacuum tube cascaded with MOS-FET to obtain very high quality current source necessary for the stable characteristics of the gas discharge in the laser tube.