Indelicato, P., J. P. Santos, S. Boucard, and J. P. Descalux. "
QED and relativistic corrections in superheavy elements."
The European Physical Journal D - Atomic, Molecular, Optical and Plasma Physics. 45 (2007): 155-170.
AbstractIn this paper we review the different relativistic and QED contributions to energies, ionic radii, transition probabilities and Landé g-factors in super-heavy elements, with the help of the MultiConfiguration Dirac-Fock method (MCDF). The effects of taking into account the Breit interaction to all orders by including it in the self-consistent field process are demonstrated. State of the art radiative corrections are included in the calculation and discussed. We also study the non-relativistic limit of MCDF calculation and find that the non-relativistic offset can be unexpectedly large.
Alferes, {José Júlio}, and Ricardo Amador. "
r3- A foundational ontology for reactive rules."
On the Move to Meaningful Internet Systems 2007: CoopIS, DOA, ODBASE, GADA, and IS - OTM Confederated International Conferences CoopIS, DOA, ODBASE, GADA, and IS 2007, Proceedings. PART 1 ed. Vol. 4803 LNCS. Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics), 4803 LNCS. 2007. 933-952.
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Costa, A. M., M. C. Martins, J. P. Santos, P. Indelicato, and F. Parente. "
Relativistic calculation of Kα hypersatellite line energies and transition probabilities for selected atoms with 12<=Z<=80."
Journal of Physics B: Atomic, Molecular and Optical Physics. 40 (2007): 57.
AbstractThe transition probabilities of Kα hypersatellite lines and energy shifts with respect to the corresponding diagram lines are computed using the Dirac–Fock model for several values of atomic number Z throughout the periodic table. The influence of the Breit interaction on the Kα1h/Kα2h line intensity ratio, Kα1h and Kα2h line energy shifts and Kα1h to Kα2h line energy splitting is evaluated. Double-K shell hole threshold values for selected elements with 23 ⩽Z⩽ 30, calculated within the same approach, are compared with available experimental results.
Aguas, H., Pereira Costa Raniero Fortunato Martins L. D. L. "
Role of the oxide layer on the performances of a-Si:H schottky structures applied to PDS fabrication."
Materials Research Society Symposium Proceedings. Vol. 910. 2007. 415-420.
AbstractIn this work we present results of studies performed on Schottky and metal-insulator-semiconductor (MIS) position sensitive detectors (PSD) structures: substrate (glass)/ Cr (300 nm) / a-Si:H [n] (37 nm) / a-Si:H [i] (600 nm) / SiO2 (1.5 nm - for the MIS) / Au (7 nm). The effect of the interfacial oxide layer between Au and a-Si:H, for the MIS structures, was studied and compared with the Schottky, in order to determine how beneficial it could be for device performances and time degradation. For doing so, the Au thickness of 70Å was deposited by thermal evaporation on an oxide free (Schottky) and oxidized (≈20Å) (MIS) a-Si:H surfaces. These structures were characterized by SIMS, RBS, SEM and AFM in order to correlate the obtained diffusion profile of Au at the interface and the topography with the presence of the oxide at the interface. The results show that the Au inter-diffuses very easily in the oxide free a-Si:H surface, even at room temperature, degrading the devices performance. On the other hand, the MIS structures, with their interfacial oxide present no structural changes after annealing and the PSD produced are stable. We believe that this effect is associated with the barrier effect of the interfacial oxide that prevents the Au diffusion. The optimized 1D MIS sensors are stable and exhibit a linearity error as low as 0.8 % and sensitivities of 33 mV/cm for a 5 mW spot beam intensity at a wavelength of 532 nm, while the Schottky sensors showed a time degradation of their characteristics. © 2006 Materials Research Society.