The two-photon absorption of few-electron ions has been studied by using second-order perturbation theory and Dirac's relativistic equation. Within this framework, the general expressions for the excitation cross sections and rates are derived including a full account of the higher-order multipole terms in the expansion of the electron-photon interaction. While these expressions can be applied to any ion, independent of its particular shell structure, detailed computations are carried out for the two-photon absorption of hydrogen-, helium-, and berylliumlike ions and are compared with the available theoretical and experimental data. The importance of relativistic and nondipole effects in the analysis and computation of induced two-photon transitions is pointed out. Moreover, we discuss the potential of these transitions for atomic parity-violation studies in the high-Z domain.

The two-photon absorption of few-electron ions has been studied by using second-order perturbation theory and Dirac's relativistic equation. Within this framework, the general expressions for the excitation cross sections and rates are derived including a full account of the higher-order multipole terms in the expansion of the electron-photon interaction. While these expressions can be applied to any ion, independent of its particular shell structure, detailed computations are carried out for the two-photon absorption of hydrogen-, helium-, and berylliumlike ions and are compared with the available theoretical and experimental data. The importance of relativistic and nondipole effects in the analysis and computation of induced two-photon transitions is pointed out. Moreover, we discuss the potential of these transitions for atomic parity-violation studies in the high-Z domain.

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New compounds of the general formulas [M(Ar-BIAN)(2)]BF(4) and [M(Ar-BIAN)(NCMe)(2)]BF(4), where M=Cu(1) or Ag(1) and Ar-BIAN = bis(aryl)acenaphthenequinonediimine, were synthesized by the direct reaction of [Cu(NCMe)(4)]BF(4) or [Ag(NCMe)(4)]BF(4) with the corresponding Ar-BIAN ligand in dried CH(2)Cl(2). The synthesized compounds are [M(o, d, p-Me(3)C(6)H(2)-BIAN)(2)]BF(4) where M = Cu(1) (1) and Ag(1) (2), [M(o,d-iPr(2)C(6)H(3)-BIAN)(NCMe)(2)]BF(4) where M = Cu(1) (3) and Ag(1) (4), and [Ag(o,d-iPr(2)C(6)H(3)-BIAN)(2)]BF(4) (5). The crystal structures of compounds 1-3 and 5 were solved by singlecrystal X-ray diffraction. In all cases copper(I) or silver(I) are in a distorted tetrahedron that is constructed from the four nitrogen atoms of the two a-diimine ligands or, in 3, from one a-diimine ligand and two acetonitrile molecules. All compounds were characterized by elemental analyses, matrix-assisted laser desorption ionization time-of-flight mass spectrometry, and IR, UV-vis, and (1)H NMR spectroscopy. The analysis of the molecular geometry and the energetic changes for the formation reactions of the complexes, in a CH(2)Cl(2) solution, were evaluated by density functional theory calculations and compared with the experimental results.

Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Transparent, undoped semiconductive thin films of zinc oxide were deposited by radio frequency plasma enhanced reactive thermal evaporation of zinc rods in the presence of oxygen at room temperature, without any post-deposition annealing treatments. The study of the variation of rf power, in the range 5-200W, on the main properties of these films was made. A decrease of the electrical conductivity of these films with increasing rf power was observed (10(-3) to 10(-12) (Omega cm)(-1)), respectively, while the average visible transparency was kept practically constant (approximate to 80%). From this initial study, a set of bottom-gate type thin-film transistors were made using the most promising semiconductor materials. Preliminary I(V) measurements showed all transistors working, with best results obtained from zinc oxide material deposited at the lowest rf power (20 W), within the deposition conditions range which leads to semiconductive material. Such devices presented an I-on (20 V)/I-off (-5 V) ratio of 6 x 10(6) and a field-effect mobility of 0.37 cm(2)/(V s). (C) 2010 Elsevier B.V. All rights reserved.

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Nowadays, among the available transparent semiconductors for device use, the great majority (if not all) have n-type conductivity. The fabrication of a transparent p-type semiconductor with good optoelectronic properties (comparable to those of n-type: InOx, ITO, ZnOx or FTO) would significantly broaden the application field of thin films. However, until now no material has yet presented all the required properties. Cu2S is a p-type narrow-band-gap material with an average optical transmittance of about 60% in the visible range for 50 nm thick films. However, due to its high conductivity at room temperature, 10 nm in thickness seems to be appropriate for device use. Cu2S thin films with 10 nm in thickness have an optical visible transmittance of about 85% rendering them as very good candidates for transparent p-type semiconductors. In this work CuxS thin films were deposited on alkali-free (AF) glass by thermal evaporation. The objective was not only the determination of its optoelectronic properties but also the feasibility of an active layer in a p-type thin film transistor. In our CuxS thin films, p-type high conductivity with a total visible transmittance of about 50% have been achieved. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

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