Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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B
Barquinha, P., A. Pimentel, A. Marques, L. Pereira, R. Martins, and E. Fortunato.
"
Influence of the semiconductor thickness on the electrical properties of transparent TFTs based on indium zinc oxide
."
Journal of Non-Crystalline Solids
. 352 (2006): 1749-1752.
Abstract
Website
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Barquinha, P., L. Pereira, H. Aguas, E. Fortunato, and R. Martins.
"
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
."
Materials Science in Semiconductor Processing
. 7 (2004): 243-247.
Abstract
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Barquinha, P., E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins.
"
Influence of time, light and temperature on the electrical properties of zinc oxide TFTs
."
Superlattices and Microstructures
. 39 (2006): 319-327.
Abstract
Website
n/a
G
GONCALVES, G., E. Elangovan, P. Barquinha, L. Pereira, R. Martins, and E. Fortunato.
"
Influence of post-annealing temperature on the properties exhibited by ITO, IZO and GZO thin films
."
Thin Solid Films
. 515 (2007): 8562-8566.
Abstract
Website
n/a
O
Olziersky, Antonis, Pedro Barquinha, Anna Vila, Luis Pereira, Goncalo Goncalves, Elvira Fortunato, Rodrigo Martins, and Juan R. Morante.
"
Insight on the SU-8 resist as passivation layer for transparent Ga2O3-In2O3-ZnO thin-film transistors
."
Journal of Applied Physics
. 108 (2010).
Abstract
Website
n/a
P
Pereira, L., P. Barquinha, E. Fortunato, and R. Martins.
"
Influence of metal induced crystallization parameters on the performance of polycrystalline silicon thin film transistors
."
Thin Solid Films
. 487 (2005): 102-106.
Abstract
Website
n/a
Pereira, L., P. Barquinha, E. Fortunato, and R. Martins.
"
Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide
."
Materials Science and Engineering B-Solid State Materials for Advanced Technology
. 118 (2005): 210-213.
Abstract
Website
n/a
Pereira, L., L. Raniero, P. Barquinha, E. Fortunato, and R. Martins.
"
Impedance study of the electrical properties of poly-Si thin film transistors
."
Journal of Non-Crystalline Solids
. 352 (2006): 1737-1740.
Abstract
Website
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more