Pedro Barquinha

Materials Science Department, I3N|CENIMAT

pmcb@fct.unl.pt (email)

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2014
Schmeisser, Dieter, Joerg Haeberle, Pedro Barquinha, Diana Gaspar, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "Electronic structure of amorphous ZnO films." Physica Status Solidi C: Current Topics in Solid State Physics, Vol 11, No 9-10. Eds. M. Godlewski, and A. Zakrzewski. Vol. 11. Physica Status Solidi C-Current Topics in Solid State Physics, 11. 2014. 1476-1480. Abstract
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Recent Publications

  • Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
  • Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
  • Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
  • Next generation of thin film transistors based on zinc oxide
  • Zinc oxide thin-film transistors
  • Recent advances in ZnO transparent thin film transistors
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