Publications

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2005
Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, L. M. N. Pereira, and R. F. P. Martins. "Fully transparent ZnO thin-film transistor produced at room temperature." Advanced Materials. 17 (2005): 590-+. AbstractWebsite
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Martins, R., P. Barquinha, A. Pimentel, L. Pereira, and E. Fortunato. "Transport in high mobility amorphous wide band gap indium zinc oxide films." Physica Status Solidi a-Applications and Materials Science. 202 (2005): R95-R97. AbstractWebsite
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Pereira, L., P. Barquinha, E. Fortunato, and R. Martins. "Influence of the oxygen/argon ratio on the properties of sputtered hafnium oxide." Materials Science and Engineering B-Solid State Materials for Advanced Technology. 118 (2005): 210-213. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, A. Marques, L. Pereira, and R. Martins Zinc oxide thin-film transistors. Eds. N. H. Nickel, and E. Terukov. Vol. 194. Zinc Oxide - A Material for Micro- and Optoelectronic Applications, 194., 2005. AbstractWebsite
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2004
Fortunato, E. M. C., P. M. C. Barquinha, A. C. M. B. G. Pimentel, A. M. F. Goncalves, A. J. S. Marques, R. F. P. Martins, and L. M. N. Pereira. "Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature." Applied Physics Letters. 85 (2004): 2541-2543. AbstractWebsite
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Barquinha, P., L. Pereira, H. Aguas, E. Fortunato, and R. Martins. "Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering." Materials Science in Semiconductor Processing. 7 (2004): 243-247. AbstractWebsite
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Fortunato, E., P. Barquinha, A. Pimentel, A. Goncalves, L. Pereira, A. Marques, and R. Martins. "Next generation of thin film transistors based on zinc oxide." Integration of Advanced Micro-and Nanoelectronic Devices-Critical Issues and Solutions. Eds. J. Morais, D. Kumar, M. Houssa, R. K. Singh, D. Landheer, R. Ramesh, R. M. Wallace, S. Guha, and H. Koinuma. Vol. 811. Materials Research Society Symposium Proceedings, 811. 2004. 347-352. Abstract
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