@article {Ghumman2012a,
	title = {{An upgraded TOF-SIMS VG Ionex IX23LS : Study on the negative secondary ion emission of III {\textendash} V compound semiconductors with prior neutral cesium deposition}},
	journal = {Applied Surface Science},
	volume = {258},
	year = {2012},
	note = {<p>n/a</p>
},
	pages = {2490{\textendash}2497},
	abstract = {<p>A TOF-SIMS VG Ionex IX23LS with upgraded data acquisition and control system was used to study the secondary emission of negative atomic and cluster ions of non-metallic elements (P, As and Sb) upon a 19 keV Ga+ bombardment of non-degenerated III{\textendash}V semiconductors (GaP, GaAs, GaSb, InP, InAs and InSb) with prior neutral Cs deposition from a getter dispenser. It was found that surface cesiation enhances the peak intensity of all negative ion species; in the case of atomic ions, the greatest increase (360) was observed for P- emitted from InP. Such an enhancement was larger for In-based than for Ga-based compounds. We explained that in terms of an electronegativity difference between the composing atoms of III{\textendash}V semiconductors. The greater electronegativity difference (bond ionicity) of In-based compounds resulted in the greater Cs-induced work function decrease leading to a higher increase in the ionization probability of secondary ions.</p>
},
	doi = {10.1016/j.apsusc.2011.10.079},
	author = {Ghumman, C A A and Moutinho, A M C and Santos, A. and O. M. N. D. Teodoro and Tolstogouzov, A.}
}
