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Santos, Lidia, Joana P. Neto, Ana Crespo, Daniela Nunes, Nuno Costa, Isabel M. Fonseca, Pedro Barquinha, Luis Pereira, Jorge Silva, Rodrigo Martins, and Elvira Fortunato. "{WO3 Nanoparticle-Based Conformable pH Sensor}." {ACS APPLIED MATERIALS & INTERFACES}. {6} (Submitted): {12226-12234}. Abstract

{pH is a vital physiological parameter that can be used for disease diagnosis and treatment as well as in monitoring other biological processes. Metal/metal oxide based pH sensors have several advantages regarding their reliability, miniaturization, and cost-effectiveness, which are critical characteristics for in vivo applications. In this work, WO3 nanoparticles were electrodeposited on flexible substrates over metal electrodes with a sensing area of 1 mm(2). These sensors show a sensitivity of -56.7 +/- 1.3 mV/pH, in a wide pH range of 9 to 5. A proof of concept is also demonstrated using a flexible reference electrode in solid electrolyte with a curved surface. A good balance between the performance parameters (sensitivity), the production costs, and simplicity of the sensors was accomplished, as required for wearable biomedical devices.}

Schmeisser, Dieter, Joerg Haeberle, Pedro Barquinha, Diana Gaspar, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "{Electronic structure of amorphous ZnO films}." {PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 9-10}. Eds. M. {Godlewski, and A. } Zakrzewski. Vol. {11}. {Physica Status Solidi C-Current Topics in Solid State Physics}, {11}. Submitted. {1476-1480}. Abstract

{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}

Silva, M. A. G., A, Raniero, L, Ferreira, and E. "{Silicon etching in CF(4)/O(2) and SF(6) atmospheres}." 455-456 (2004): 120-123. AbstractWebsite
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