Luís Miguel Nunes Pereira

{We report the preparation and spectro-electrochemical characterization of electrochromic devices (ECD) combining inkjet-printed WO3 as cathode and electro-deposited V2O5 as anode. ECD were prepared for the first time with an optimized formulation of gel polymer electrolyte based on Bisphenol A ethoxylate dimethacrylate and Poly(ethylene glycol) methyl ether methacrylate (BEMA/PEGMA) encompassing the Room Temperature Ionic Liquid (RTIL, 1-Ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide) as solvent. The UV-VIS spectrum of ECD was recorded at different potentials during Li+ insertion and de-insertion; additionally the Percent Trasmittance (T%) of ECD vs. time was investigated during repeated bleaching and coloring cycles allowing thus the estimation of switching times and device stability. Due to the lower ionic conductivity and the apparent superior solvent permeability within WO3 active layer, RTIL containing ECD showed slower switching times, but higher contrast with respect to the similar ones with EC/DEC as solvent. These results indicate that the ECD containing environment-friendly RTIL electrolytes are suitable for applications requiring high contrast, high safety and moderately fast switching times.}

{We use resonant photoemission spectroscopy (resPES) to study the electronic properties of amorphous ZnO (a-ZnO) layers. We report on the core levels, the valence band (VB) PES data, and the X-ray absorption (XAS) data which we use for the conduction band (CB) density of states. From these results we are able to derive the partial density of states (pDOS) of O2p and Zn4s4p states in the VB and CB, respectively as well as a band scheme. At the O1s resonance we observe a band of localized defect states which is located between the Fermi energy and the CBM. At the Zn2p edge the XAS data indicate that localized Zn4s4p states are involved in the DOS starting already at the Fermi energy. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim}

Cotton-based nanocrystalline cellulose (NCC), also known as nanopaper, one of the major sources of renewable materials, is a promising substrate and component for producing low cost fully recyclable flexible paper electronic devices and systems due to its properties (lightweight, stiffness, non-toxicity, transparency, low thermal expansion, gas impermeability and improved mechanical properties).Here, we have demonstrated for the first time a thin transparent nanopaper-based field effect transistor (FET) where NCC is simultaneously used as the substrate and as the gate dielectric layer in an 'interstrate' structure, since the device is built on both sides of the NCC films; while the active channel layer is based on oxide amorphous semiconductors, the gate electrode is based on a transparent conductive oxide.Such hybrid FETs present excellent operating characteristics such as high channel saturation mobility (>7 cm(2) V (-1) s(-1)), drain-source current on/off modulation ratio higher than 10(5), enhancement n-type operation and subthreshold gate voltage swing of 2.11 V/decade. The NCC film FET characteristics have been measured in air ambient conditions and present good stability, after two weeks of being processed, without any type of encapsulation or passivation layer. The results obtained are comparable to ones produced for conventional cellulose paper, marking this out as a promising approach for attaining high-performance disposable electronics such as paper displays, smart labels, smart packaging, RFID (radio-frequency identification) and point-of-care systems for self-analysis in bioscience applications, among others.

Paper electronics is a topic of great interest due the possibility of having low-cost, disposable and recyclable electronic devices. The final goal is to make paper itself an active part of such devices. In this work we present new approaches in the selection of tailored paper, aiming to use it simultaneously as substrate and dielectric in oxide based paper field effect transistors (FETs). From the work performed, it was observed that the gate leakage current in paper FETs can be reduced using a dense microfiber/nanofiber cellulose paper as the dielectric. Also, the stability of these devices against changes in relative humidity is improved. On other hand, if the pH of the microfiber/nanofiber cellulose pulp is modified by the addition of HCl, the saturation mobility of the devices increases up to 16 cm(2) V(-1) s(-1), with an ION/IOFF ratio close to 10(5).

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology.