Martins, Rodrigo, Lavareda Guilherme Fortunato Elvira Soares Fernando Fernandes Luis Ferreira Luis. "
Linear thin-film position-sensitive detector (LTFPSD) for 3D measurements."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2415. 1995. 148-158.
AbstractA linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).
b b b b b b b Martins, R.a b, Carvalho Fortunato Maçarico Santos Baia Viera Guimarães N. a E. a. "
Effects of U.V. light on the transport properties of a-Si : H films during their growth."
Journal of Non-Crystalline Solids. 97-98 (1987): 1399-1402.
AbstractThe influence of U.V. light on the transport properties of a-Si : H films during its growth in a r.f. double chamber system was investigated by conductivity, optical absorption, I.R. absorption, spectral photoconductivity and X-ray diffraction measurements. It was concluded that the presence of U.V. light during the deposition process controls the way how hydrogen is incorporated in the structure as well as the impurity atoms. The microcrystalline films investigated present sharp peaks in the I.R. spectra. Both boron and phosphorus doped films show conductivities higher than 10 S cm-1 and estimated crystalline sizes of the order of 80 Å. © 1987.
Martins, Rodrigo, Fortunato Elvira. "
Simulation of the lateral photo effect in large-area 1D a-Si:H p-i-n thin-film position-sensitive detectors."
Proceedings of SPIE - The International Society for Optical Engineering. Vol. 2397. 1995. 745-756.
AbstractThe aim of this work is to provide the basis for the interpretation, under steady state, of the lateral photoeffect in p-i-n a-Si:H 1D Thin Film Position Sensitive Detectors (1D TFPSD) through an analytical model. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlation's discussed.
Martins, R., Macarico Ferreira Nunes Bicho Fortunato A. I. R. "
Correlation between electrical-optical and structural properties of microcrystalline silicon N type films."
Materials Research Society Symposium - Proceedings. Vol. 420. 1996. 807-812.
AbstractWide band gap microcrystalline silicon films have aroused considerable interest since they combine some electro-optical advantages of amorphous and crystalline materials highly important to produce electro-optical devices such as TFTs and solar cells. In this paper we present results concerning the electro-optical characteristics of highly transparent and conductive n-type μc-Si based films. Here, emphasis is given to the production of n-type μc-films with optical gaps of 2.3 eV and dark conductivity's of 6.5 Scm-1.
Martins, R., Ferreira Cabrita Fortunato I. A. E. "
Improvement of a-Si:H device stability and performances by proper design of the interfaces."
Journal of Non-Crystalline Solids. 266-269 B (2000): 1094-1098.
AbstractThis paper deals with a new design method for the interfaces of a-Si:H pin solar cells that improves the stability and performances of devices deposited in a single batch chamber process. The method consists in removing a deposited sacrificial layer placed between the p/i and/or i/n interfaces by etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls cross-contamination and the substrate surface. The results achieved increase the device fill factor and short circuit current density, respectively towards 75% and 16.3 mA cm-2, with a final efficiency of about 10%, before light soaking experiments. © 2000 Elsevier Science B.V. All rights reserved.
Martins, R., Ferreira Carvalho Guimarães I. N. L. "
Engineering of plasma deposition systems used for producing large area a-Si:H devices."
Journal of Non-Crystalline Solids. 137-138 (1991): 757-760.
AbstractOne of the main problems in producing large area amorphous silicon devices concerns films uniformity. In this paper we present data concerning the role of reactor geometry and design and on the film performances as well as the problems related to mechanical mismatches in scaling up the reactor size. © 1991 Elsevier Science Publishers B.V. All rights reserved.