Rodrigo Martins

The role of order and disorder on the electronic performances of n -type ionic oxides such as zinc oxide, gallium zinc oxide, and indium zinc oxide used as active (channel) or passive (drain/source) layers in thin film transistors (TFTs) processed at room temperature are discussed, taking as reference the known behavior observed in conventional covalent semiconductors such as silicon. The work performed shows that while in the oxide semiconductors the Fermi level can be pinned up within the conduction band, independent of the state of order, the same does not happen with silicon. Besides, in the oxide semiconductors the carrier mobility is not bandtail limited and so disorder does not affect so strongly the mobility as it happens in covalent semiconductors. The electrical properties of the oxide films (resistivity, carrier concentration, and mobility) are highly dependent on the oxygen vacancies (source of free carriers), which can be controlled by changing the oxygen partial pressure during the deposition process and/or by adding other metal ions to the matrix. In this case, we make the oxide matrix less sensitive to the presence of oxygen, widening the range of oxygen partial pressures that can be used and thus improving the process control of the film resistivity. The results obtained in fully transparent TFT using polycrystalline ZnO or amorphous indium zinc oxide (IZO) as channel layers and highly conductive poly/nanocrystalline ZGO films or amorphous IZO as drain/source layers show that both devices work in the enhancement mode, but the TFT with the highest electronic saturation mobility and on/off ratio 49.9 cm2 V s and 4.3× 108, respectively, are the ones in which the active and passive layers are amorphous. The ZnO TFT whose channel is based on polycrystalline ZnO, the mobility and on/off ratio are, respectively, 26 cm2 V s and 3× 106. This behavior is attributed to the fact that the electronic transport is governed by the s -like metal cation conduction bands, not significantly affected by any type of angular disorder promoted by the 2p O states related to the valence band, or small amounts of incorporated metal impurities that lead to a better control of vacancies and of the TFT off current. © 2007 American Institute of Physics.

This paper deals with the interpretation of transport properties of amorphous silicon hydrogenated films (a-Si:H) through dark conductivity, photoconductivity and pulse controlled capacitance-voltage measurements. a-Si:H films were produced by rf glow discharge coupled either inductively or capacitively to a 3% SiH4/Ar mixture at different crossed electromagnetic static fields. The data concerned with the dark activation energy, photoactivation energy, variation of the density of localized states and photosensitivity, (σph/σd)25°C, of a-Si:H films can account for their optoelectronic properties which are strongly dependent on the deposition parameters. We also observed that crossed electromagnetic static fields applied during film formation influences hydrogen incorporation in a different manner than previously proposed. © 1983.

This paper presents results of the spatial and frequency detection limits of an integrated array of 32 one-dimensional amorphous silicon thin film position sensitive detectors with a nip structure, under continuous and pulsed laser operation conditions. The data obtained show that 0.45×0.06 cm arrays, occupying a total active area of about 1 cm2 have a spatial resolution better than 10 μm (modulation transfer function of about 0.2), with a cut-off frequency of about 6.8 KHz. Besides that, under pulsed laser conditions the device non-linearity has its minimum (about 1.6%), for a frequency of about 200Hz. Up to the limits of the cut-off frequency, the device non-linearity increases to values above 4%.

The aim of this work is to present an analytical model able to interpret the experimental data of the dependence of film's uniformity on the discharge pressure, gas flow and temperature used during the production of thin films by the plasma enhancement chemical vapour deposition technique, under optimised electrode's geometry and electric field distribution. To do so, the gas flow is considered to be quasi-incompressible and inviscous leading to the establishment of the electro-fluid-mechanics equations able to interpret the film's uniformity over the substrate area, when the discharge process takes place in the low power regime.

The aim of this work is to provide the basis for the interpretation, under steady state conditions, of the lateral photoeffect in p-i-n a-Si:H one-dimensional thin-film position-sensitive detectors (1D TFPSD) and the determination of its linear spatial detection limits, function of the device, and light spot source characteristics. This leads to the development of a model, based on the application of the Poisson, continuity, and current density equations in the p-i-n junction, where two thin resistive layers, as equipotentials, are considered on both sides of the doped layers. The experimental data recorded in 1D TFPSD devices with different performances are compared with the predicted curves and the obtained correlations discussed. © 1995 American Institute of Physics.

A linear array thin film position sensitive detector (LTFPSD) based on hydrogenated amorphous silicon (a-Si:H) is proposed for the first time, taking advantage of the optical properties presented by a-Si:H devices we have developed a LTFPSD with 128 integrated elements able to be used in 3-D inspections/measurements. Each element consists on a one-dimensional LTFPSD, based on a p.i.n. diode produced in a conventional PECVD system, where the doped layers are coated with thin resistive layers to establish the required device equipotentials. By proper incorporation of the LTFPSD into an optical inspection camera it is possible to acquire information about an object/surface, through the optical cross-section method. The main advantages of this system, when compared with the conventional CCDs, are the low complexity of hardware and software used and that the information can be continuously processed (analogue detection).

The electrosynthesis of polypyrrole (PPy) has been achieved on aluminium in aqueous medium of tartaric acid by means of cyclic voltammetry, potentiostatic and galvanostatic techniques. Scanning electron microscopy (SEM) and X-ray microanalysis by energy spectroscopy dispersion (EDS) applying on surfaces show that the PPy coating is developed from the metal surface through the cracks of the initial Al2O3 layer. A mechanism involving the participation of the supporting electrolyte and the pyrrole (Py) in distinct active sites was proposed based on the linear sweep voltammetry. It is observed for all applied electrochemical techniques that the pyrrole concentration has to be higher than 0.1 M to allow the polypyrrole electrodeposition in acid medium. Scanning electron microscopy, secondary electrons (SE) and backscattering electrons (BE), shows that the PPy coating obtained in galvanostatic and potentiostatic modes starts with small islands at weak applied potentials or current densities. Moreover, EDS reveals a good homogeneity and compactness of the film achieved in galvanostatic method. The corrosion results in 3% NaCl medium show that the PPy coating decreases the corrosion behaviour of the aluminium. The bilayer Al2O3/PPy shows a capacitor with future applications. © 2006 Elsevier Ltd. All rights reserved.

This paper deals with a new process to improve the stability of a-Si:H pin solar cells deposited in a single batch process by proper passivation of the interfaces. The process consists in removing partially a deposited sacrificial oxide layer grown between the p/i or i/n interfaces by SF6 etching. This layer is an absorber of defects and impurities that are introduced in the interfaces, mainly from the chamber walls and the substrate surface. The results achieved in laboratory samples lead to devices in which the fill factor and short circuit current density were improved respectively towards 75% and 16.5 mA cm-2, with a final working efficiency of about 9.5%. © 2001 Elsevier Science Ltd. All rights reserved.

This work reports on the performances of undoped and doped amorphous/nanocrystalline silicon films grown by hot wire plasma assisted technique. The structure (including the presence of several nanoparticles with sizes ranging from 5 nm to 50 nm), composition (oxygen and hydrogen content) and transport properties of the films are highly dependent on the temperature of the filament and on the hydrogen dilution. The undoped films grown under low r.f. power (≈4mWcm-2) and filament temperatures around 1850 K present dark conductivities below 10-10 Scm-1, optical gaps of about 1.6 eV and photosensitivities above 105, (under AM 1.5 light intensities), with almost no traces of oxygen content. For the n- and the p-doped silicon films also fabricated under the same conditions the conductivities obtained are of about 10-2Scm-1 and 10-5Scm-1, respectively. © 1998 Elsevier Science Ltd. All rights reserved.

The influence of U.V. light on the transport properties of a-Si : H films during its growth in a r.f. double chamber system was investigated by conductivity, optical absorption, I.R. absorption, spectral photoconductivity and X-ray diffraction measurements. It was concluded that the presence of U.V. light during the deposition process controls the way how hydrogen is incorporated in the structure as well as the impurity atoms. The microcrystalline films investigated present sharp peaks in the I.R. spectra. Both boron and phosphorus doped films show conductivities higher than 10 S cm-1 and estimated crystalline sizes of the order of 80 Å. © 1987.

The surfaces of cordierite and glass particles were modified by coating them with an alumina precursor using a precipitation process in the presence of urea. Scanning electron microscopy (SEM), high-resolution transmission electron microscopy, X-ray diffraction, electrophoresis, and rheological measurements were used to characterize the coated powders. SEM and transmission electron microscopy morphologies of the coated powders revealed that amorphous and homogeneous coatings have been formed around the particles. The morphology of the coated powders showed a coiled wormlike surface. The coating Al2O3 layer dominated the surface properties of the coated glass and cordierite powders. The influence of the coating layer on the processing ability of cordierite-based glass-ceramics substrates by tape casting was studied in aqueous media. It could be concluded that the coating of the powders facilitates the processing and yields green and sintered tapes with denser, more homogeneous microstructures compared with the uncoated powders.

Aqueous suspensions of cordierite-based glass ceramics were prepared by using four types of dispersants and binders and different solids loading. The experiments were designed according to the Taguchi method, which shows great advantages in optimising more than two factors that need to be considered in an experimental design. Different parameters such as the type and concentration of the dispersants and the binders, and the solids loading were optimised to obtain homogeneous and crack-free green tapes. Dolapix CE 64 (1.0 wt.%) and Duramax B-1080 or Duramax B-1070 (10 wt.%) with 65 wt.% solids loading represent an optimal selection of the parameters to obtain low viscosity suspension, and crack-free green tapes with the highest green and sintered density. Microstructural differences between crack-free and cracked samples were observed by scanning electron microscopy (SEM). The crack-free green tapes show homogenous microstructures from top to bottom with organic additives uniformly surrounding the powders, whereas cracked samples exhibit heterogeneous microstructures and non-uniform distribution of the organics. © 2002 Elsevier Science B.V. All rights reserved.

Thick films of cordierite-based glass ceramics were prepared by aqueous tape casting from suspensions containing 80-wt% solids. The weight proportions of cordierite/glass ranged from 70/30 to 30/70 in order to investigate the effect of glass content on the rheological behaviour and on the microstructures and properties of the green tapes. Suspensions with 50 to 60-wt% glass content exhibited the lowest viscosity values among all the slurries investigated, while the green tape containing 30-wt% glass presented homogenous microstructures at both top and bottom surfaces, contrarily to the observations for the other compositions. The green densities increased with glass content. The sintered tapes (1150°C, 2h) containing 50 to 60-wt% glass exhibited the lowest values for the dielectric constant (∼5.2) and dielectric loss (∼0.002) at 1MHz.

The interaction of light with wavelength-sized photonic nanostructures is highly promising for light management applied to thin-film photovoltaics. Several light trapping effects come into play in the wave optics regime of such structures that crucially depend on the parameters of the photonic and absorbing elements. Thus, multi-parameter optimizations employing exact numerical models, as performed in this work, are essential to determine the maximum photocurrent enhancement that can be produced in solar cells.Generalized spheroidal geometries and high-index dielectric materials are considered here to model the design of the optical elements providing broadband absorption enhancement in planar silicon solar cells. The physical mechanisms responsible for such enhancement are schematized in a spectral diagram, providing a deeper understanding of the advantageous characteristics of the optimized geometries. The best structures, composed of TiO2 half-spheroids patterned on the cells' top surface, yield two times higher photocurrent (up to 32.5 mA/cm2 in 1.5 μm thick silicon layer) than the same devices without photonic schemes.These results set the state-of-the-art closer to the theoretical Lambertian limit. In addition, the considered light trapping designs are not affected by the traditional compromise between absorption enhancement versus current degradation by recombination, which is a key technological advantage. © 2016 Elsevier Ltd.

The intense light scattered from metal nanoparticles sustaining surface plasmons makes them attractive for light trapping in photovoltaic applications. However, a strong resonant response from nanoparticle ensembles can only be obtained if the particles have monodisperse physical properties. Presently, the chemical synthesis of colloidal nanoparticles is the method that produces the highest monodispersion in geometry and material quality, with the added benefits of being low-temperature, low-cost, easily scalable and of allowing control of the surface coverage of the deposited particles. In this paper, novel plasmonic back-reflector structures were developed using spherical gold colloids with appropriate dimensions for pronounced far-field scattering. The plasmonic back reflectors are incorporated in the rear contact of thin film n-i-p nanocrystalline silicon solar cells to boost their photocurrent generation via optical path length enhancement inside the silicon layer. The quantum efficiency spectra of the devices revealed a remarkable broadband enhancement, resulting from both light scattering from the metal nanoparticles and improved light incoupling caused by the hemispherical corrugations at the cells' front surface formed from the deposition of material over the spherically shaped colloids. © 2015 IOP Publishing Ltd.

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as deposited film is about 1.3 × 10-1 gW*cm and decreases down to 6.9 × 10-3 Ω*cm as the annealing temperature is increased up to 500 °C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping. © 1995.

Tin doped indium oxide (ITO) films were deposited on glass substrates by rf reactive magnetron sputtering using a metallic alloy target (In-Sn, 90-10). The post-deposition annealing has been done for ITO films in air and the effect of annealing temperature on the electrical, optical and structural properties of ITO films was studied. It has been found that the increase of the annealing temperature will improve the film electrical properties. The resistivity of as-deposited film is about 1.3×10-1 Ω* cm and decreases down to 6.9×10-3 Ω* cm as the annealing temperature is increased up to 500°C. In addition, the annealing will also increase the film surface roughness which can improve the efficiency of amorphous silicon solar cells by increasing the amount of light trapping.

An advanced compact and analytical drain current model for the amorphous gallium indium zinc oxide (GIZO) thin film transistors (TFTs) is proposed. Its output saturation behavior is improved by introducing a new asymptotic function. All model parameters were extracted using an adapted version of the Universal Method and Extraction Procedure (UMEM) applied for the first time for GIZO devices in a simple and direct form. We demonstrate the correct behavior of the model for negative VDS, a necessity for a complete compact model. In this way we prove the symmetry of source and drain electrodes and extend the range of applications to both signs of VDS. The model, in Verilog-A code, is implemented in Electronic Design Automation (EDA) tools, such as Smart Spice, and compared with measurements of TFTs. It describes accurately the experimental characteristics in the whole range of GIZO TFTs operation, making the model suitable for the design of circuits using these types of devices. © 2016 Elsevier Ltd

Photocurrent enhancement in thin a-Si:H solar cells due to the plasmonic light trapping is investigated, and correlated with the morphology and the optical properties of the selfassembled silver nanoparticles incorporated in the cells' back reflector. © 2014 Optical Society of America.

The present work focuses on a qualitative analysis of localised I-V characteristics based on the nanostructure morphology of highly dense arrays of p-type NiO nano-pillars (NiO-NPs). Vertically aligned NiO-NPs have been grown on different substrates by using a glancing angle deposition (GLAD) technique. The preferred orientation of as grown NiO-NPs was controlled by the deposition pressure. The NiO-NPs displayed a polar surface with a microscopic dipole moment along the (111) plane (Tasker's type III). Consequently, the crystal plane dependent surface electron accumulation layer and the lattice disorder at the grain boundary interface showed a non-uniform current distribution throughout the sample surface, demonstrated by a conducting AFM technique (c-AFM). The variation in I-V for different points in a single current distribution grain (CD-grain) has been attributed to the variation of Schottky barrier height (SBH) at the metal-semiconductor (M-S) interface. Furthermore, we observed that the strain produced during the NiO-NPs growth can modulate the SBH. Inbound strain acts as an external field to influence the local electric field at the M-S interface causing a variation in SBH with the NPs orientation. This paper shows that vertical arrays of NiO-NPs are potential candidates for nanoscale devices because they have a great impact on the local current transport mechanism due to its nanostructure morphology. © 2013 The Royal Society of Chemistry.

The effects of zinc concentration on the performance of solution processed amorphous indium gallium zinc oxide (a-IGZO) thin film transistors (TFTs) have been investigated using high-k aluminum titanium oxide as gate dielectric. The x-ray diffraction results confirmed that all the IGZO channel layers are amorphous. The performance of a-IGZO TFTs were investigated in the linear regime operation. Highest linear field-effect mobility of 5.8 cm2 /V s with an Ion / Ioff ratio of 6× 107 and subthreshold swing of 0.28 V/dec were obtained for the a-IGZO (311) TFTs. The obtained performance of the a-IGZO TFTs is very promising for low-voltage display applications. © 2010 American Institute of Physics.

In this paper, we report the environmental, optical, and gate bias stress stability of amorphous zinc-tin-oxide (ZTO) thin-film transistors (TFTs) fabricated by sol-gel spin-coating method. The ZTO TFTs showed excellent environmental and optical stability. The threshold voltage stability of ZTO TFTs was sensitive to both positive and negative gate bias stress. Maximum threshold voltage shifting of +1.9 and -3.2 V was observed under a gate bias stress of +10 and -10 V, respectively, with no significant change to subthreshold swing value. © 2006 IEEE.

The variation of the structure, morphology and the electrical properties of thin amorphous silicon films caused by Rapid Thermal Annealing is studied. The films annealed at 1200°C for 2 minutes change their structure to polycrystalline and as a result their resistivity decreases by 4 orders of magnitude. Due to the small thickness of the as deposited amorphous silicon the obtained poly-Si is strongly irregular and has many discontinuities in its texture.

In this work, the nonisothermal sintering behavior of as-received commercial high purity ZnO micrometric (m-ZnO), submicrometric (sm-ZnO) and nanometric (n-ZnO) powders was studied. The sintering behavior for sputtering target production was evaluated by changing the green density of samples from 62% of theoretical density (TD) to 35%. We observed that for n-ZnO powder, the maximum shrinkage rate (MSR) temperature (T MSR) was not affected by the green density, and that it was reached at lower temperatures (∼710°C) compared with m-ZnO and sm-ZnO powders. For these powders, the temperature of MSR increased from 803°C to 934°C and from 719°C to 803°C as TD changed from 62% to 35% TD, respectively. Small grain size (∼0.560 μm) and high density targets were obtained for n-ZnO when sintered at temperatures below the T MSR. Heating rate from 1°C to 15°C/min led to lower activation energy for n-ZnO (∼201 ± 3 kJ/mol) than for the submicrometric (sm-ZnO) (∼332 ± 20 kJ/mol) and micrometric (m-ZnO) (∼273 ± 9 kJ/mol) powders. Using the model proposed by Bannister and Woolfrey, an n value of 0.75 was found, which was correlated with a combination of viscous flow and volume diffusion mechanisms that should control the initial stage of n-ZnO sintering. No significant differences were observed for n-ZnO powder in terms of density when the size of targets (scale-up effect) was increased, while in the case of m-ZnO and sm-ZnO, a delay in the densification was observed, which was related to the higher sinterability of n-ZnO powder. Two inches ZnO ceramic targets with different particle sizes and final densities were used in an rf magnetron sputtering system to produce ZnO films under the same deposition conditions. Films with thickness around 100 nm and good uniformity were produced using those targets, and no variation was observed in the optical and morphological properties. However, low electrical resistivity (1.4 Omega;·cm) films were obtained with n-ZnO targets, which could be explained in terms of a nonstoichiometric Zn:O composition of the started powders. © 2011 The American Ceramic Society.