Performances of microcrystalline zinc tin oxide thin-film transistors processed by spray pyrolysis
- Citation:
- Parthiban, S., Elangovan Nayak Gonçalves Nunes Pereira Barquinha Busani Fortunato Martins E. P. K. "Performances of microcrystalline zinc tin oxide thin-film transistors processed by spray pyrolysis." IEEE/OSA Journal of Display Technology. 9 (2013): 825-831.
Abstract:
In this work, we report results concerning the performances of thin-film transistors (TFTs) where the channel layer is based on microcrystalline zinc tin oxide (ZTO) processed by spray pyrolysis technique. TFTs made with 30 nm thick ZTO channel layer deposited at a substrate temperature of 400 C and 300 Cexhibited, respectively, a saturation mobility of 2.9 cm V s and 1.45 cm V s ; voltage of 0.15 V, and 0.2 V; a sub-threshold swing of 400 mV/dec and 500 mV/dec; ON/OFF ratio at the onset of hard saturation current of 3.5 10 and 6 10 , for a drain to source voltage of 10 V (close to or below the gate to source voltage). This indicates that the substrate temperature is relevant in determining the devices' electronic performances. © 2013 IEEE.
Notes:
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