Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure

Citation:: b b b b Filonovich, S.A.a, Águas Bernacka-Wojcik Gaspar Vilarigues Silva Fortunato Martins H. a I. b. "Highly conductive p-type nanocrystalline silicon films deposited by RF-PECVD using silane and trimethylboron mixtures at high pressure." Vacuum. 83 (2009): 1253-1256.

Abstract:

In this paper we present a study of boron-doped nc-Si:H films prepared by PECVD at high deposition pressure (≥4 mbar), high plasma power and low substrate temperature (≤200 °C) using trimethylboron (TMB) as a dopant gas. The influence of deposition parameters on electrical, structural and optical properties is investigated. We determine the deposition conditions that lead to the formation of p-type nanocrystalline silicon thin films with very high crystallinity, high value of dark conductivity (>7 (Ω cm)-1) and high optical band gap (≥1.7 eV). Modeling of ellipsometry spectra reveals that the film growth mechanism should proceed through a sub-surface layer mechanism that leads to silicon crystallization. The obtained films are very good candidates for application in amorphous and nanocrystalline silicon solar cells as a p-type window layer. © 2009 Elsevier Ltd. All rights reserved.

Notes:

cited By 21

Rodrigo Martins

Professor @ Materials Science Department