The formulation of a bending vibration problem of an elastically restrained Bernoulli-Euler beam carrying a finite number of concentrated elements along its length is presented. In this study, the authors exploit the application of the differential evolution optimization technique to identify the torsional stiffness properties of the elastic supports of a Bernoulli-Euler beam. This hybrid strategy allows the determination of the natural frequencies and mode shapes of continuous beams, taking into account the effect of attached concentrated masses and rotational inertias, followed by a reconciliation step between the theoretical model results and the experimental ones. The proposed optimal identification of the elastic support parameters is computationally demanding if the exact eigenproblem solving is considered. Hence, the use of a Gaussian process regression as a meta-model is addressed. An experimental application is used in order to assess the accuracy of the estimated parameters throughout the comparison of the experimentally obtained natural frequency, from impact tests, and the correspondent computed eigenfrequency.

Este artículo describe una actividad de robótica educativa llevada a cabo en una escuela en Hortolandia, São Paulo, Brasil, como parte de un taller de capacitación docente sobre robótica educativa en contexto inclusivo. Los participantes

This paper deals with the evaluation of the performances of InZnO thin-film transistor (TFT) using as dielectric an ultra-thin solution-processed ZrOx layer. The ZrOx thin film was formed using ultraviolet (UV) photo-annealing method and shows a low leakage-current density of 4 nA/cm2 at 3.8 MV/cm and a large areal-capacitance of 775 nF/cm2 at 50 Hz. The InZnO TFT incorporating the UV-treated ZrOx dielectric exhibits high stable and enhanced characteristics, an on/off current ratio of 10

Abstract Probabilistic fatigue models are required to account conveniently for several sources of uncertainty arising in the prediction procedures for structural details, such as the scatter in material behaviour. In this paper, a procedure to derive probabilistic S-N fields for structural details [1] is applied to a notched geometry with elliptic central hole made of puddle iron from the Eiffel bridge, based on the local approaches supported by the probabilistic ɛa–N or Smith–Watson–Topper (SWT)–N fields [1,2]. This procedure suggests an extension of the fatigue crack propagation model proposed by Noroozi et al. [3,4] to structural details, in order to cover both the fatigue crack initiation and fatigue crack propagation, based on local strain approaches to fatigue. Both fatigue crack initiation and fatigue crack propagation mechanisms are accounted for in the proposed approach. The numerical results are compared with available experimental S-N fatigue data for the notched plate under consideration.

In this work we calculate photoionization and X-ray production cross-sections (XPCS) of M-shell vacancies in Hg at incident photon energy of 5.96 keV (low.

Solution-processed field-effect transistors are strategic building blocks when considering low-cost sustainable flexible electronics. Nevertheless, some challenges (e.g., processing temperature, reliability, reproducibility in large areas, and cost effectiveness) are requirements that must be surpassed in order to achieve high-performance transistors. The present work reports electrolyte-gated transistors using as channel layer gallium-indium-zinc-oxide nanoparticles produced by solvothermal synthesis combined with a solid-state electrolyte based on aqueous dispersions of vinyl acetate stabilized with cellulose derivatives, acrylic acid ester in styrene and lithium perchlorate. The devices fabricated using this approach display a ION/IOFF up to 1 × 106, threshold voltage (VTh) of 0.3-1.9 V, and mobility up to 1 cm2/(V s), as a function of gallium-indium-zinc-oxide ink formulation and two different annealing temperatures. These results validates the usage of electrolyte-gated transistors as a viable and promising alternative for nanoparticle based semiconductor devices as the electrolyte improves the interface and promotes a more efficient step coverage of the channel layer, reducing the operating voltage when compared with conventional dielectrics gating. Moreover, it is shown that by controlling the applied gate potential, the operation mechanism of the electrolyte-gated transistors can be modified from electric double layer to electrochemical doping. © 2014 American Chemical Society.

The optimization of tungsten trioxide (WO3) nanoparticles produced via hydrothermal synthesis for application in electrochromic (EC) devices is reported. The structure and morphology of the nanoparticles are controlled by changing the acidity of the aqueous solvent added to the sol-gel precursor (peroxopolytungstic acid) during synthesis. Orthorhombic hydrated WO3 nanorods or monoclinic WO3 nanoslabs are obtained when HCl is added, while synthesis only in aqueous medium results in a mixture of both types of polymorphs. Dual-phase thin films are processed by inkjet printing deposition of the nanoparticles in flexible polyethylene terephthalate substrate with indium tin oxide coating (ITO PET) followed by the deposition of the precursor solution. When compared with purely amorphous tungsten oxide films, the dual phase ones present higher optical densities and improved capacity, and cyclability stability. The best results, obtained for orthorhombic hydrated nanoparticles (ortho -WO3 ·0.33H2 O), are due to its high surface area and improved conductivity. Additionally, the ex situ X-ray diffraction (XRD) lithiation studies show evidence of a higher distortion of the monoclinic when compared with the orthorhombic crystallographic structure, which contribute to the inferior EC performance. These results validate the use of inkjet printing deposition with low processing temperatures for EC dual-phase thin films containing optimized nanoparticles which are compatible with low-cost substrates. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.