Microcrystalline phosphorus-doped hydrogenated silicon alloy films were deposited in a remote plasma CVD (chemical vapor deposition) system. The film properties were studied as a function of RF power density and hydrogen concentration in the reaction gas mixture. The properties of the deposited films are extremely sensitive to the RF power density in the studied range of 250 mW/cm2 to 625 mW/cm2. Very low values of electrical resistivity were obtained. For an RF power density of 500 mW/cm2, ρ = 3 × 10-2 Ω-cm, while ρ = 1.9 × 103 Ω-cm for 625 mW/cm2, indicating the predominance of the amorphous tissue over the microcrystalline phase. High doping efficiencies which can be correlated to large grain size are indicated by the very low values of the activation energy as low as 30 meV for 500 mW/cm2, that were obtained.

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The aim of the present work was to study the optical properties of amorphous hydrogenated silicon films produced by capacitive and inductive r.f. glow discharge in a 3%SiH4-Ar gas mixture. The effect of the application of static electric and magnetic fields during the film formation on the photoconductivity, photoactivation energy, recombination mechanisms and optical gap was thoroughly investigated. Films prepared in a capacitively or inductively coupled discharge show bias-dependent photoconductivities, which reach about 10-4 Ω-1 cm-1 for an inductive discharge with a negative bias and about 10-5 Ω-1 cm-1 for a capacitive discharge with a positive bias. The optical gap is of the order of 1.55 eV for capacitive films and is bias dependent for inductive films (1.45-1.85 eV). A superimposed magnetic field (of about 1 kG) increases the photoconductivity by one order of magnitude for both deposition methods. The optical gap is field dependent for inductive films (1.6-1.8 eV) and is about 1.6 eV for capacitive films. The main recombination mechanism at a moderate photon flux (less than 1014 cm-2 s-1) is monomolecular for all deposition conditions. The photoactivation energy lies between 0.1 and 0.2 eV for capacitive films and is about 0.1 eV for inductive films. It was also found that, by using suitable crossed electric and magnetic fields, it was possible to control the density and nature of the defect states in the films. These are correlated with the type of hydrogenated silicon species and with the amount of hydrogen incorporated into the films, which markedly influence the film properties. © 1982.