Publications

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Book Chapter
Barquinha, P., E. Fortunato, A. Goncalves, A. Pimentel, A. Marques, L. Pereira, and R. Martins. "A study on the electrical properties of ZnO based transparent TFTs." Advanced Materials Forum Iii, Pts 1 and 2. Ed. P. M. Vilarinho. Vol. 514-516. Materials Science Forum, 514-516. 2006. 68-72. Abstract
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Journal Article
Martins, Rodrigo, P. Barquinha, L. Pereira, N. Correia, G. GONCALVES, I. Ferreira, and E. Fortunato. "Selective floating gate non-volatile paper memory transistor." Physica Status Solidi-Rapid Research Letters. 3 (2009): 308-310. AbstractWebsite
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Ferreira, Isabel, Bruno Bras, Nuno Correia, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins. "Self-Rechargeable Paper Thin-Film Batteries: Performance and Applications." Journal of Display Technology. 6 (2010): 332-335. AbstractWebsite
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Martins, Rodrigo, Luis Pereira, Pedro Barquinha, Goncalo Goncalves, Isabel Ferreira, Carlos Dias, N. Correia, M. Dionisio, M. Silva, Nuno Correia, and Elvira Fortunato. "Self-sustained n-Type Memory Transistor Devices Based on Natural Cellulose Paper Fibers." Journal of Information Display. 10 (2009): 149-157. AbstractWebsite
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Ferreira, Isabel, Bruno Bras, Jose Inacio Martins, Nuno Correia, Pedro Barquinha, Elvira Fortunato, and Rodrigo Martins. "Solid-state paper batteries for controlling paper transistors." Electrochimica Acta. 56 (2011): 1099-1105. AbstractWebsite
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Santos, Lidia, Daniela Nunes, Tomas Calmeiro, Rita Branquinho, Daniela Salgueiro, Pedro Barquinha, Luis Pereira, Rodrigo Martins, and Elvira Fortunato. "Solvothermal Synthesis of Gallium-Indium-Zinc-Oxide Nanoparticles for Electrolyte-Gated Transistors." Acs Applied Materials & Interfaces. 7 (2015): 638-646. AbstractWebsite
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Pereira, Luis, Pedro Barquinha, Goncalo Goncalves, Anna Vila, Antonis Olziersky, Joan Morante, Elvira Fortunato, and Rodrigo Martins. "Sputtered multicomponent amorphous dielectrics for transparent electronics." Physica Status Solidi a-Applications and Materials Science. 206 (2009): 2149-2154. AbstractWebsite
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Patent
Barquinha, P. M. C., A. R. X. Barros, C. W. Byun, N. F. O. Correia, V. M. L. Figueiredo, E. M. C. Fortunato, C. S. Hwang, R. F. P. Martins, S. H. Park, and A. R. X. Barris Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate. Electronics&Telecom Res Inst; Univ New Lisbon Faculty Sci&Technology; Univ Lisboa Faculdade Ciencias&Tecnolo; Electronics & Telecom Res Inst; Univ Lisboa Faculdade Ciencias & Tecnolo; Univ New Lisbon Faculty Sci & Technology, Submitted. Abstract
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