Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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F
Fortunato, E., P. Barquinha, and R. Martins.
"
Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances
."
Advanced Materials
. 24 (2012): 2945-2986.
Abstract
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Fortunato, E., L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. GONCALVES, A. Goncalves, and R. Martins.
"
Oxide semiconductors: Order within the disorder
."
Philosophical Magazine
. 89 (2009): 2741-2758.
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K
Kiazadeh, Asal, Daniela Salgueiro, Rita Branquinho, Joana Pinto, Henrique L. Gomes, Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato.
"
Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress
."
Apl Materials
. 3 (2015).
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Next generation of thin film transistors based on zinc oxide
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more