Pedro Barquinha

Materials Science Department, I3N|CENIMAT

pmcb@fct.unl.pt (email)

  • Publications
  • Bio
  • Classes

Publications

Export 3 results:
  • RTF
  • Tagged
  • XML
  • BibTex
Sort by: Author Title Type [ Year  (Desc)]
2015
Kiazadeh, Asal, Daniela Salgueiro, Rita Branquinho, Joana Pinto, Henrique L. Gomes, Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato. "Operational stability of solution based zinc tin oxide/SiO2 thin film transistors under gate bias stress." Apl Materials. 3 (2015). AbstractWebsite
n/a
2012
Fortunato, E., P. Barquinha, and R. Martins. "Oxide Semiconductor Thin-Film Transistors: A Review of Recent Advances." Advanced Materials. 24 (2012): 2945-2986. AbstractWebsite
n/a
2009
Fortunato, E., L. Pereira, P. Barquinha, I. Ferreira, R. Prabakaran, G. GONCALVES, A. Goncalves, and R. Martins. "Oxide semiconductors: Order within the disorder." Philosophical Magazine. 89 (2009): 2741-2758. AbstractWebsite
n/a

Recent Publications

  • Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
  • Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
  • Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
  • Next generation of thin film transistors based on zinc oxide
  • Zinc oxide thin-film transistors
  • Recent advances in ZnO transparent thin film transistors
more
Bookmark and Share

© FCT/UNL - 2025Login Powered by OpenScholar