Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
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2008
Fortunato, E., L. Raniero, L. Silva, A. Goncalves, A. Pimentel, P. Barquinha, H. Aguas, L. Pereira, G. GONCALVES, I. Ferreira, E. Elangovan, and R. Martins.
"
Highly stable transparent and conducting gallium-doped zinc oxide thin films for photovoltaic applications
."
Solar Energy Materials and Solar Cells
. 92 (2008): 1605-1610.
Abstract
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Pereira, L., P. Barquinha, E. Fortunato, R. Martins, D. Kang, C. J. Kim, H. Lim, I. Song, and Y. Park.
"
High k dielectrics for low temperature electronics
."
Thin Solid Films
. 516 (2008): 1544-1548.
Abstract
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Fortunato, Elvira M. C., Lus M. N. Pereira, Pedro M. C. Barquinha, Ana Botelho M. do Rego, Goncalo Goncalves, Anna Vila, Juan R. Morante, and Rodrigo F. P. Martins.
"
High mobility indium free amorphous oxide thin film transistors
."
Applied Physics Letters
. 92 (2008).
Abstract
Website
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Fortunato, E., P. Barquinha, G. GONCALVES, L. Pereira, and R. Martins.
"
High mobility and low threshold voltage transparent thin film transistors based on amorphous indium zinc oxide semiconductors
."
Solid-State Electronics
. 52 (2008): 443-448.
Abstract
Website
n/a
Fortunato, Elvira, Nuno Correia, Pedro Barquinha, Luis Pereira, Goncalo Goncalves, and Rodrigo Martins.
"
High-performance flexible hybrid field-effect transistors based on cellulose fiber paper
."
Ieee Electron Device Letters
. 29 (2008): 988-990.
Abstract
Website
n/a
2010
GONCALVES, G., P. Barquinha, L. Pereira, N. Franco, E. Alves, R. Martins, and E. Fortunato.
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High Mobility a-IGO Films Produced at Room Temperature and Their Application in TFTs
."
Electrochemical and Solid State Letters
. 13 (2010): II20-II22.
Abstract
Website
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2013
Bahubalindruni, Pydi, Vitor Grade Tavares, Pedro Barquinha, Rodrigo Martins, and Elvira Fortunato
High-Gain Topologies for Transparent Electronics
. Eds. I. Kuzle, T. Capuder, and H. Pandzic. 2013 Ieee Eurocon., 2013.
Abstract
Website
n/a
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Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more