@article {7961,
	title = {Low-temperature processed Schottky-gated field-effect transistors based on amorphous gallium-indium-zinc-oxide thin films},
	journal = {Applied Physics Letters},
	volume = {97},
	number = {24},
	year = {2010},
	note = {<p>Times Cited: 16</p>
},
	month = {Dec 13},
	abstract = {n/a},
	isbn = {0003-6951},
	url = {<Go to ISI>://WOS:000285481000086},
	author = {Lorenz, M. and Lajn, A. and Frenzel, H. and Wenckstern, H. V. and Grundmann, M. and Barquinha, P. and Martins, R. and Fortunato, E.}
}
