Pedro Barquinha
Materials Science Department, I3N|CENIMAT
pmcb@fct.unl.pt
(email)
Publications
Bio
Classes
Publications
Export 1 results:
RTF
Tagged
XML
BibTex
Sort by: [
Author
]
Title
Type
Year
A
B
C
D
[E]
F
G
H
I
J
K
L
M
N
O
P
Q
R
S
T
U
V
W
X
Y
Z
[
Show ALL
]
E
Elangovan, E., K. J. Saji, S. Parthiban, G. GONCALVES, P. Barquinha, R. Martins, and E. Fortunato.
"
Thin-Film Transistors Based on Indium Molybdenum Oxide Semiconductor Layers Sputtered at Room Temperature
."
Ieee Electron Device Letters
. 32 (2011): 1391-1393.
Abstract
Website
n/a
Enter your keywords:
Recent Publications
Semiconductor device e.g. complementary metal-oxide-semiconductor device for electronic devices, comprises p-type oxide layer formed of oxide consisting of copper-containing copper monoxide and tin-containing tin monoxide, and substrate
Influence of the deposition conditions on the properties of titanium oxide produced by r.f. magnetron sputtering
Wide-bandgap high-mobility ZnO thin-film transistors produced at room temperature
Next generation of thin film transistors based on zinc oxide
Zinc oxide thin-film transistors
Recent advances in ZnO transparent thin film transistors
more